Ceramic structure, method for manufacturing the same, and member for semiconductor manufacturing apparatus

US10863587B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10863587-B2
Application numberUS-201715425098-A
CountryUS
Kind codeB2
Filing dateFeb 6, 2017
Priority dateFeb 29, 2016
Publication dateDec 8, 2020
Grant dateDec 8, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A ceramic structure 10 includes a heater electrode 14 within a disk-shaped AlN ceramic substrate 12. The heater electrode 14 contains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |ΔCTE| between a thermal expansion coefficient of the AlN ceramic substrate 12 and a thermal expansion coefficient of the heater electrode 14 at a temperature in the range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.

First claim

Opening claim text (preview).

What is claimed is: 1. A ceramic structure including a heater electrode on a surface of or within an AlN ceramic substrate containing 50% or more by volume of AlN as a main component, wherein the heater electrode contains WC as a main component and, in addition, a metal filler, the metal filler has a lower resistivity and a higher thermal expansion coefficient than AlN, an absolute value of a difference between a thermal expansion coefficient of the AlN ceramic substrate and a thermal expansion coefficient of the heater electrode at a temperature in a range of 40° C. to 1000° C. is 0.35 ppm/° C. or less. 2. The ceramic structure according to claim 1 , wherein the metal filler is Ru or a Ru alloy. 3. The ceramic structure according to claim 1 , wherein the metal filler is RuAl. 4. The ceramic structure according to claim 1 , wherein the heater electrode has a resistivity of 3.0×10 −5 Ωcm or less at a room temperature. 5. A member for a semiconductor manufacturing apparatus including the ceramic structure according to claim 1 . 6. A method for manufacturing a ceramic structure including: placing a heater electrode containing WC as a main component and, in addition, a metal filler on a surface of a first substrate of an AlN sintered body, calcined body, or formed body each containing 50% or more by volume of AlN as a main component, placing a second substrate of AlN sintered body, calcined body, or formed body, each containing 50% or more by volume of AlN as a main component thereon to form a layered body, and hot-press firing the layered body to form the ceramic structure, wherein the metal filler has a lower resistivity and a higher thermal expansion coefficient than AlN, and an absolute value of a difference between a thermal expansion coefficient of the AlN ceramic substrate and a thermal expansion coefficient of the heater electrode at a temperature in a range of 40° C. to 1000° C. is 0.35 ppm/° C. or less. 7. The method for manufacturing a ceramic structure according to claim 6 , wherein the metal filler is Ru or Ru alloy, and the amount of the metal filler is determined such that an absolute value of a difference between a thermal expansion coefficient of the AlN ceramic substrate and a thermal expansion coefficient of the heater electrode at a temperature in a range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.

Assignees

Inventors

Classifications

  • mainly by conduction · CPC title

  • H05B3/143Primary

    applied to semiconductors, e.g. wafers heating (H05B3/0047 takes precedence) · CPC title

  • characterised by the composition or nature of the conductive material · CPC title

  • Forming laminates or joining articles wherein at least one substrate contains at least two different parts of macro-size, e.g. one ceramic substrate layer containing an embedded conductor or electrode · CPC title

  • Joining of a first substrate with a second substrate at least partially inside the first substrate, where the bonding area is at the inside of the first substrate, e.g. one tube inside another tube · CPC title

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What does patent US10863587B2 cover?
A ceramic structure 10 includes a heater electrode 14 within a disk-shaped AlN ceramic substrate 12. The heater electrode 14 contains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |ΔCTE| between a thermal expansion coefficient of the AlN ceramic substra…
Who is the assignee on this patent?
Ngk Insulators Ltd
What technology area does this patent fall under?
Primary CPC classification H05B3/143. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 08 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).