Electrostatic chuck heater and film deposition apparatus
US-2024203779-A1 · Jun 20, 2024 · US
US10863587B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10863587-B2 |
| Application number | US-201715425098-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 6, 2017 |
| Priority date | Feb 29, 2016 |
| Publication date | Dec 8, 2020 |
| Grant date | Dec 8, 2020 |
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A ceramic structure 10 includes a heater electrode 14 within a disk-shaped AlN ceramic substrate 12. The heater electrode 14 contains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |ΔCTE| between a thermal expansion coefficient of the AlN ceramic substrate 12 and a thermal expansion coefficient of the heater electrode 14 at a temperature in the range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.
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What is claimed is: 1. A ceramic structure including a heater electrode on a surface of or within an AlN ceramic substrate containing 50% or more by volume of AlN as a main component, wherein the heater electrode contains WC as a main component and, in addition, a metal filler, the metal filler has a lower resistivity and a higher thermal expansion coefficient than AlN, an absolute value of a difference between a thermal expansion coefficient of the AlN ceramic substrate and a thermal expansion coefficient of the heater electrode at a temperature in a range of 40° C. to 1000° C. is 0.35 ppm/° C. or less. 2. The ceramic structure according to claim 1 , wherein the metal filler is Ru or a Ru alloy. 3. The ceramic structure according to claim 1 , wherein the metal filler is RuAl. 4. The ceramic structure according to claim 1 , wherein the heater electrode has a resistivity of 3.0×10 −5 Ωcm or less at a room temperature. 5. A member for a semiconductor manufacturing apparatus including the ceramic structure according to claim 1 . 6. A method for manufacturing a ceramic structure including: placing a heater electrode containing WC as a main component and, in addition, a metal filler on a surface of a first substrate of an AlN sintered body, calcined body, or formed body each containing 50% or more by volume of AlN as a main component, placing a second substrate of AlN sintered body, calcined body, or formed body, each containing 50% or more by volume of AlN as a main component thereon to form a layered body, and hot-press firing the layered body to form the ceramic structure, wherein the metal filler has a lower resistivity and a higher thermal expansion coefficient than AlN, and an absolute value of a difference between a thermal expansion coefficient of the AlN ceramic substrate and a thermal expansion coefficient of the heater electrode at a temperature in a range of 40° C. to 1000° C. is 0.35 ppm/° C. or less. 7. The method for manufacturing a ceramic structure according to claim 6 , wherein the metal filler is Ru or Ru alloy, and the amount of the metal filler is determined such that an absolute value of a difference between a thermal expansion coefficient of the AlN ceramic substrate and a thermal expansion coefficient of the heater electrode at a temperature in a range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.
mainly by conduction · CPC title
applied to semiconductors, e.g. wafers heating (H05B3/0047 takes precedence) · CPC title
characterised by the composition or nature of the conductive material · CPC title
Forming laminates or joining articles wherein at least one substrate contains at least two different parts of macro-size, e.g. one ceramic substrate layer containing an embedded conductor or electrode · CPC title
Joining of a first substrate with a second substrate at least partially inside the first substrate, where the bonding area is at the inside of the first substrate, e.g. one tube inside another tube · CPC title
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