Transparent Conductive Film and Fabrication Method Thereof, Display Substrate and Display Device
US-2016042829-A1 · Feb 11, 2016 · US
US10862062B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10862062-B2 |
| Application number | US-201716086522-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 22, 2017 |
| Priority date | May 23, 2016 |
| Publication date | Dec 8, 2020 |
| Grant date | Dec 8, 2020 |
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A method of fabricating a flexible transparent conductive electrode layer includes depositing a correlated metal film having a thickness between 10 nm and 100 nm on a flexible transparent substrate, annealing the correlated metal film with the UV pulses, and maintaining a temperature of the flexible transparent substrate below 80° C. during the depositing and annealing.
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What is claimed is: 1. A method of fabricating a flexible transparent conductive electrode layer, comprising: depositing a correlated metal film having a thickness between 10 nm and 100 nm on a flexible transparent substrate; annealing the correlated metal film with UV pulses; and maintaining a temperature of the flexible transparent substrate below 80° C. during the depositing and annealing, wherein the annealing comprises annealing a first area of the correlated metal film until the first area has a first predetermined sheet resistance of lower than 10Ω/□ such that an organic light-emitting diode (OLED) layer can be deposited on the flexible transparent conductive electrode layer without using photolithography, and the first area has a first predetermined shape. 2. The method of claim 1 , wherein the annealing further comprises annealing a second area of the correlated metal film until the second area has a second predetermined sheet resistance, and wherein the second area has a second predetermined shape. 3. The method of claim 2 , wherein the second predetermined sheet resistance is between 1 and 100 Ω/□. 4. The method of claim 1 , wherein a roll-to-roll deposition process is used for the depositing of the correlated metal film on the flexible transparent substrate. 5. The method of claim 1 , wherein the correlated metal film is SrVO 3 or CaVO 3 . 6. The method of claim 1 , further comprising: depositing the OLED layer on the flexible transparent conductive electrode layer resulting in a flexible organic light-emitting diode lighting panel. 7. The method of claim 1 , wherein the correlated metal film has a thickness between 10 nm and 50 nm. 8. The method of claim 1 , wherein the correlated metal film is of the form of ABO 3 with A being a single or mixture of Group IIA materials and B being a single or mixture of Group VB materials.
using coherent electromagnetic radiation, e.g. laser annealing · CPC title
Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title
Electrodes · CPC title
Electrodes · CPC title
of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal · CPC title
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