Method of forming transparent correlated metal electrode

US10862062B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10862062-B2
Application numberUS-201716086522-A
CountryUS
Kind codeB2
Filing dateMay 22, 2017
Priority dateMay 23, 2016
Publication dateDec 8, 2020
Grant dateDec 8, 2020

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A method of fabricating a flexible transparent conductive electrode layer includes depositing a correlated metal film having a thickness between 10 nm and 100 nm on a flexible transparent substrate, annealing the correlated metal film with the UV pulses, and maintaining a temperature of the flexible transparent substrate below 80° C. during the depositing and annealing.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of fabricating a flexible transparent conductive electrode layer, comprising: depositing a correlated metal film having a thickness between 10 nm and 100 nm on a flexible transparent substrate; annealing the correlated metal film with UV pulses; and maintaining a temperature of the flexible transparent substrate below 80° C. during the depositing and annealing, wherein the annealing comprises annealing a first area of the correlated metal film until the first area has a first predetermined sheet resistance of lower than 10Ω/□ such that an organic light-emitting diode (OLED) layer can be deposited on the flexible transparent conductive electrode layer without using photolithography, and the first area has a first predetermined shape. 2. The method of claim 1 , wherein the annealing further comprises annealing a second area of the correlated metal film until the second area has a second predetermined sheet resistance, and wherein the second area has a second predetermined shape. 3. The method of claim 2 , wherein the second predetermined sheet resistance is between 1 and 100 Ω/□. 4. The method of claim 1 , wherein a roll-to-roll deposition process is used for the depositing of the correlated metal film on the flexible transparent substrate. 5. The method of claim 1 , wherein the correlated metal film is SrVO 3 or CaVO 3 . 6. The method of claim 1 , further comprising: depositing the OLED layer on the flexible transparent conductive electrode layer resulting in a flexible organic light-emitting diode lighting panel. 7. The method of claim 1 , wherein the correlated metal film has a thickness between 10 nm and 50 nm. 8. The method of claim 1 , wherein the correlated metal film is of the form of ABO 3 with A being a single or mixture of Group IIA materials and B being a single or mixture of Group VB materials.

Assignees

Inventors

Classifications

  • using coherent electromagnetic radiation, e.g. laser annealing · CPC title

  • Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title

  • Electrodes · CPC title

  • Electrodes · CPC title

  • C23C14/088Primary

    of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10862062B2 cover?
A method of fabricating a flexible transparent conductive electrode layer includes depositing a correlated metal film having a thickness between 10 nm and 100 nm on a flexible transparent substrate, annealing the correlated metal film with the UV pulses, and maintaining a temperature of the flexible transparent substrate below 80° C. during the depositing and annealing.
Who is the assignee on this patent?
Konica Minolta Laboratory Usa Inc
What technology area does this patent fall under?
Primary CPC classification C23C14/088. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 08 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).