Pattern forming method, method for producing electronic device, and actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development

Patent metadata

Field	Value
Publication number	US-10859914-B2
Application number	US-201715657295-A
Country	US
Kind code	B2
Filing date	Jul 24, 2017
Priority date	Feb 26, 2015
Publication date	Dec 8, 2020
Grant date	Dec 8, 2020

Abstract

A method for producing an electronic device includes the pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development. Specifically, provided is a pattern forming method, including a film forming step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of irradiating the film, and a development step of developing the film using a developer containing an organic solvent, in which the composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation, the content of Si atoms in the resin is 1.0 to 30 mass %, and the content of the resin in the total solid content of the composition is 20 mass % or more.

First claim

What is claimed is:

1. A pattern forming method, comprising:
forming a film using an actinic ray-sensitive or radiation-sensitive resin composition;
irradiating the film with actinic rays or radiation; and
developing the film irradiated with actinic rays or radiation using a developer containing an organic solvent,
wherein the actinic ray-sensitive or radiation-sensitive resin composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation,
the content of Si atoms in the resin is 1.0 to 30 mass %,
the content of the resin in the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition is 40 mass % or more, provided that, in the case where the repeating unit having an Si atom has a structure in which a polar group is protected by a leaving group capable of decomposing and leaving by the action of an acid and the leaving group has an Si atom, the amount of Si atoms in the leaving group is not included in the content of Si atoms in the resin,
the amount of the organic solvent relative to the developer is 90 mass% or more and 100 mass% or less,
the actinic ray-sensitive or radiation-sensitive resin composition further contains a hydrophobic resin containing a repeating unit represented by General Formula (II), and
the repeating unit represented by General Formula (II) is 90 mol% or more with respect to the total repeating units of the hydrophobic resin,

in General Formula (II),
X b1 represents a hydrogen atom, an alkyl group, a cyano group, or a halogen atom, and
R2 represents an organic group which has one or more CH 3 partial structures and is stable to an acid.

2. The pattern forming method according to claim 1 , wherein the repeating unit having an Si atom has a silsesquioxane structure.

3. The pattern forming method according to claim 2 , wherein the silsesquioxane structure is a cage-type silsesquioxane structure.

4. The pattern forming method according to claim 1 , wherein the resin contains a repeating unit having at least one of a lactone structure, a sultone structure, or a carbonate structure.

5. The pattern forming method according to claim 1 , wherein the compound capable of generating an acid upon irradiation with actinic rays or radiation has a molecular weight of 580 or more.

6. A method for producing an electronic device, comprising the pattern forming method according to claim 1 .

7. The pattern forming method according to claim 1 , wherein the content of the resin in the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition is 60 mass % or more.

8. The pattern forming method according to claim 1 , wherein the repeating unit having an acid-decomposable group is represented by General Formula (AI),

in General Formula (AI),
Xa 1 represents a hydrogen atom, an alkyl group, a cyano group, or a halogen atom,
T represents a single bond or a divalent linking group,
Rx 1 to Rx 3 each independently represent an alkyl group or a cycloalkyl group, and
two of Rx 1 to Rx 3 are bonded to each other to form a ring structure.

9. The pattern forming method according to claim 1 , wherein the actinic ray-sensitive or radiation-sensitive resin composition further contains a hydrophobic resin containing a repeating unit represented by General Formula (III),

in General Formula (III),
X b 2 represents a hydrogen atom, an alkyl group, a cyano group, or a halogen atom,
R3 represents an alkyl group which has one or more CH3 partial structures, and
n represents an integer of 1 to 5.

Assignees

• Fujifilm Corp

Inventors

• HATAKEYAMA Naoya
• Goto Akiyoshi
• Shirakawa Michihiro
• Kato Keita
• OU Keiyu

Classifications

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title

• G03F7/075 Primary

  Silicon-containing compounds · CPC title

• G03F7/039

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

• G03F7/038

  Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title