Laser welded glass packages

Patent metadata

Field	Value
Publication number	US-10858283-B2
Application number	US-201816179377-A
Country	US
Kind code	B2
Filing date	Nov 2, 2018
Priority date	Oct 31, 2014
Publication date	Dec 8, 2020
Grant date	Dec 8, 2020

Abstract

An apparatus including a first substrate, a second substrate, an inorganic film provided between the first substrate and the second substrate and in contact with both the first substrate and the second substrate, a laser welded zone formed between the first and second substrate by the inorganic film, where the laser welded zone has a heat affected zone (HAZ), where the HAZ is defined as a region in which σHAZ is at least 1 MPa higher than average stress in the first substrate and the second substrate, wherein σHAZ is compressive stress in the HAZ, and wherein the laser welded zone is characterized by its σinterface laser weld>σHAZ, wherein σinterface laser weld is peak value of compressive stress in the laser welded zone.

First claim

What is claimed is:

1. An apparatus comprising:
a first substrate;
a second substrate;
an inorganic film between the first substrate and the second substrate and in contact with both the first substrate and the second substrate;
a laser welded zone formed between the first substrate and the second substrate by the inorganic film,
the laser welded zone surrounded by a heat affected zone (HAZ)
defined as a region in which σ HAZ is at least 1 MPa greater than an average stress in the first substrate and the second substrate, and σ HAZ is compressive stress in the HAZ, and
the laser welded zone characterized by σ interface laser weld >σ HAZ , wherein σ interface laser weld is a peak value of compressive stress in the laser welded zone, the laser welded zone and the HAZ forming a laser weld requiring a stress load of greater than 1 MPa to induce cohesive failure of the laser weld, and each of the inorganic film, the first substrate, and the second substrate have a combined internal transmission of more than 80% at a wavelength in a range from about 420 nm to about 750 nm.

2. The apparatus of claim 1 , wherein σ interface laser weld ≥5 MPa.

3. The apparatus of claim 1 , wherein σ interface laser weld ≥10 MPa.

4. The apparatus of claim 1 , wherein σ interface laser weld ≥20 MPa.

5. The apparatus of claim 1 , wherein at least one of the first or second substrates comprises a glass, glass-ceramic, ceramic, polymer, or metal.

6. The apparatus of claim 1 , wherein laser absorption by the inorganic film is at least 10% at a predetermined laser wavelength.

7. The apparatus of claim 1 , wherein laser absorption by the inorganic film is at least 15% at a predetermined laser wavelength.

8. The apparatus of claim 1 , wherein a composition of the inorganic film is selected from the group consisting of Al, Ag, Ce, Cr, Cu, Fe, Ge, ITO, Mg, Mn, Mo, Pb, SnF 2 , SnO 2 , Ti, TiO 2 , Va, Zn, ZnO, ZnF 2 , and combinations thereof.

9. The apparatus of claim 1 , wherein a composition of the inorganic film is selected to lower an activation energy for inducing creep flow of the first substrate, the second substrate, or both the first and second substrates.

10. The apparatus of claim 1 , wherein a composition of the inorganic film is a laser absorbing low liquidus temperature material with a liquidus temperature less than or equal to about 1000° C.

11. The apparatus of claim 1 , wherein the inorganic film comprises:
20-100 mol % SnO, 0-50 mol % SnF 2 , and 0-30 mol % P 2 O 5 or B 2 O 3 .

12. An electronic package comprising:
a first substrate;
a second substrate, wherein one or both of the first or second substrate comprise a recessed portion for accommodating an active electronic device;
an inorganic film between the first substrate and the second substrate along a sealing region circumscribing the recessed portion and in contact with both the first substrate and the second substrate;
a laser welded zone formed between the first and second substrates by the inorganic film,
the laser welded zone surrounded by a heat affected zone (HAZ)
defined as a region in which σ HAZ is at least 1 MPa greater than an average stress in the first substrate and the second substrate, and σ HAZ is compressive stress in the HAZ,
the laser welded zone characterized by σ interface laser weld >σ HAZ , wherein σ interface laser weld is a peak value of compressive stress in the laser welded zone; and
wherein the laser welded zone extends along the sealing region establishing a hermetic seal between the first substrate and the second substrate such that the recessed portion forms a hermetic environment for the active electronic device, the laser welded zone and the HAZ forming a laser weld requiring a stress load of greater than 1 MPa to induce cohesive failure of the laser weld, and each of the inorganic film, the first substrate, and the second substrate have a combined internal transmission of more than 80% at a wavelength in a range from about 420 nm to about 750 nm.

13. The electronic package of claim 12 , wherein σ interface laser weld ≥5 MPa.

14. The electronic package of claim 12 , wherein σ interface laser weld ≥10 MPa.

15. The electronic package of claim 12 , wherein σ interface laser weld ≥20 MPa.

16. The electronic package of claim 12 , wherein at least one of the first or second substrates comprises a glass, glass-ceramic, ceramic, polymer, or metal.

17. The electronic package of claim 12 , wherein the active electronic device is one of an OLED or a micro-processor chip.

Assignees

• Corning Inc

Inventors

• Logunov Stephan Lvovich
• Qaroush Yousef Kayed
• Quesada Mark Alejandro
• Streltsov Alexander Mikhailovich
• Zheng Leo Young

Classifications

• H10K59/80

  Constructional details · CPC title

• H10K59/10

  OLED displays · CPC title

• H10K50/8426

  Peripheral sealing arrangements, e.g. adhesives, sealants · CPC title

• C03C27/10 Primary

  with the aid of adhesive specially adapted for that purpose · CPC title

• C03C27/044

  of glass, glass-ceramic or ceramic material only · CPC title