High-rate CMP polishing method

Patent metadata

Field	Value
Publication number	US-10857647-B2
Application number	US-201715725876-A
Country	US
Kind code	B2
Filing date	Oct 5, 2017
Priority date	Jun 14, 2017
Publication date	Dec 8, 2020
Grant date	Dec 8, 2020

Abstract

The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad having radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The radial feeder grooves include a series of biased grooves connecting a pair of adjacent radial feeder grooves. A majority of the biased grooves have either an inward bias toward the center or an outward bias toward the outer edge of the polishing pad. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad at a fixed distance from the center of the polishing pad increases polishing or planarizing removal rate of the wafer.

First claim

We claim:

1. A method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates, the method comprising the following:
rotating a polishing pad, the polishing pad having a polishing layer having a polymeric matrix and a thickness, the polishing layer including a center, an outer edge and a radius extending from the center to the outer edge of the polishing pad; radial feeder grooves in the polishing layer separating the polishing layer into polishing regions, the polishing regions having a bias for adjusting residence time under the wafer, the bias having a bias angle θ between a bisect line bisecting polishing regions and biased grooves connecting adjacent feeder grooves, the bias angle θ being either an inward bias angle θ sloped inward toward the center of the polishing pad or an outward bias angle θ sloped outward toward the outer edge of the polishing pad, a majority of the biased grooves sweeping the wafer in the same direction under the wafer, the radial feeder grooves extending at least from a location adjacent the center to a location adjacent the outer edge; and each polishing region including a series of biased grooves connecting a pair of adjacent radial feeder grooves, the majority of the biased grooves having either an inward bias toward the center or an outward bias toward the outer edge of the polishing pad, both the inward and outward biased grooves moving polishing fluid toward the outer edge of the polishing pad and away from the wafer depending upon inward bias or outward bias and the direction of rotation of the polishing pad for increasing residence time of polishing fluid with outward flow of the polishing fluid in the series of biased grooves in the polishing regions under the wafer;
distributing polishing fluid onto the rotating polishing pad and into the radial feeder grooves and the series of biased grooves; and
pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad at a fixed distance from the center of the polishing pad, the wafer being closer to the outer edge of the polishing pad than the center of the polishing pad to increase removal rate of at least one component of the wafer and wherein non-alignment of bias grooves between adjacent polishing regions facilitates polishing fluid flow down the radial feeder grooves to improve slurry distribution.

2. The method of claim 1 wherein rotating the polishing pad sends used polishing fluid through a portion of the series of biased grooves over the outer edge of the polishing pad to allow flow of new polishing fluid under the wafer.

3. The method of claim 1 wherein the series of biased grooves represent parallel grooves that increase residence time of the polishing fluid under the wafer.

4. The method of claim 1 wherein rotating the polishing pad alternates the wafer between being over one radial feeder groove and being over two radial feeder grooves.

5. A method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates, the method comprising the following:
rotating a polishing pad, the polishing pad having a polishing layer having a polymeric matrix and a thickness, the polishing layer including a center, an outer edge and a radius extending from the center to the outer edge of the polishing pad; radial feeder grooves in the polishing layer separating the polishing layer into polishing regions, the polishing regions having a bias for adjusting residence time under the wafer, the bias having a bias angle θ between a bisect line bisecting polishing regions and sloped grooves connecting adjacent feeder grooves, the bias angle θ being either an inward bias angle θ sloped inward toward the center of the polishing pad or an outward bias angle θ sloped outward toward the outer edge of the polishing pad, a majority of the biased grooves sweeping the wafer in the same direction under the wafer, the polishing regions being circular sectors defined by two adjacent radial feeder grooves, a bisect line bisecting the polishing regions, the radial feeder grooves extending at least from a location adjacent the center to a location adjacent the outer edge; and each polishing region including a series of biased grooves connecting a pair of adjacent radial feeder grooves, the majority of the biased grooves having either an inward bias toward the center of the polishing pad at an angle of 20° to 85° from the bisect line or an outward bias toward the outer edge of the polishing pad at an angle of 95° to 160° from the bisect line, both the inward and outward biased grooves moving polishing fluid toward the outer edge of the polishing pad and away from the wafer depending upon inward bias or outward bias and the direction of rotation of the polishing pad for increasing residence time of polishing fluid with outward flow of the polishing fluid in the series of biased grooves in the circular sectors under the wafer;
distributing polishing fluid onto the rotating polishing pad and into the radial feeder grooves and the series of biased grooves; and
pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad at a fixed distance from the center of the polishing pad, the wafer being closer to the outer edge of the polishing pad than the center of the polishing pad to increase removal rate of at least one component of the wafer and wherein non-alignment of bias grooves between adjacent polishing regions facilitates polishing fluid flow down the radial feeder grooves to improve slurry distribution.

6. The method of claim 5 wherein rotating the polishing pad sends used polishing fluid through a portion of the series of biased grooves over the outer edge of the polishing pad to allow flow of new polishing fluid under the wafer.

7. The method of claim 5 wherein the series of biased grooves represent parallel grooves that increase residence time of the polishing fluid under the wafer.

8. The method of claim 5 wherein rotating the polishing pad alternates the wafer between being over one radial feeder groove and being over two radial feeder grooves.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc
• Rohm And Haas Electronic Mat Cmp Holdings

Inventors

• Nguyen John Vu
• Tran Tony Quan
• Hendron Jeffrey James
• Stack Jeffrey Robert

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P95/066

  the removal being a selective chemical etching step, e.g. selective dry etching through a mask · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• B24B37/042

  operating processes therefor · CPC title