US10856422B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10856422-B2 |
| Application number | US-201615553937-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 27, 2016 |
| Priority date | Feb 27, 2015 |
| Publication date | Dec 1, 2020 |
| Grant date | Dec 1, 2020 |
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Method of forming a pattern by arranging a photocurable composition on a substrate; bringing a mold having a concavo-convex pattern into contact with the composition; irradiating the composition with light to form a cured film; releasing the mold from the cured film; forming a reversal layer on the cured film having a concavo-convex pattern transferred from the mold; partially removing the reversal layer to expose the convexes of the pattern in such a manner that the reversal layer remains in the concaves of the pattern formed on the cured film; and etching the photocurable composition layer using the reversal layer remaining in the concaves as a mask to form a reversal pattern, wherein the mold is brought into contact with the photocurable composition in an atmosphere of a soluble gas having a solubility in the composition; and the soluble gas has a saturation solubility of 38% by volume or more.
Opening claim text (preview).
The invention claimed is: 1. A method of forming a pattern, comprising: arranging a photocurable composition on a substrate; bringing a mold having a concavo-convex pattern into contact with the photocurable composition; irradiating the photocurable composition with light to form a cured film; releasing the mold from the cured film; forming a reversal layer on the cured film having a concavo-convex pattern transferred from the mold; partially removing the reversal layer to expose the convexes of the concavo-convex pattern in such a manner that the reversal layer remains in the concaves of the concavo-convex pattern formed on the cured film; etching the photocurable composition layer using the reversal layer remaining in the concaves as a mask to form a reversal pattern, wherein the mold is brought into contact with the photocurable composition in an atmosphere of a soluble gas having a solubility in the photocurable composition; the soluble gas has a saturation solubility in the photocurable composition of at least 60.8% by volume, and the mold has a concavo-convex pattern height of 4 nm or more and 30 nm or less. 2. The method of forming a pattern according to claim 1 , wherein the photocurable composition at least includes a polymerizable compound (A) and a photopolymerization initiator (B). 3. The method of forming a pattern according to claim 1 , wherein the photocurable composition has a viscosity of 1 mPa*s or more and 12 mPa*s or less. 4. The method of forming a pattern according to claim 1 , wherein the mold has a concavo-convex pattern height of 10 nm or more and 30 nm or less. 5. The method of forming a pattern according to claim 1 , wherein the photocurable composition further includes a solvent (D). 6. The method of forming a pattern according to claim 1 , wherein the reversal layer is made of a spin-on-glass material. 7. The method of forming a pattern according to claim 1 , wherein the substrate has an outermost layer of a carbon material. 8. The method of forming a pattern according to claim 7 , wherein the outermost layer has a thickness of at least 110 nm. 9. The method of forming a pattern according to claim 1 , wherein the bringing of the mold into contact with the photocurable composition is performed in an atmosphere of a gas mixture of the soluble gas and an insoluble gas in the photocurable composition. 10. The method of forming a pattern according to claim 9 , wherein the insoluble gas is helium. 11. The method of forming a pattern according to claim 1 wherein the soluble gas is 1,1,1,3,3-pentafluoropropane. 12. The method of forming a pattern according to claim 1 , wherein the mold has a surface of quartz.
characterised by the processes involved to create the masks · CPC title
of organic photoresist masks · CPC title
using masks for insulating materials · CPC title
Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds (G03F7/075 takes precedence) · CPC title
Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title
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