Correlated electron material devices using dopant species diffused from nearby structures

Patent metadata

Field	Value
Publication number	US-10854814-B2
Application number	US-201816195779-A
Country	US
Kind code	B2
Filing date	Nov 19, 2018
Priority date	Jul 5, 2016
Publication date	Dec 1, 2020
Grant date	Dec 1, 2020

Abstract

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, a correlated electron material may be doped using dopant species derived from one or more precursors utilized to fabricate nearby structures such as, for example, a conductive substrate or a conductive overlay.

First claim

What is claimed is:

1. A switching device, comprising:
an electrode to comprise at least one layer of electrically conductive material to include a particular dopant species; and
a correlated electron switch to comprise at least one layer of correlated electron material formed over the electrode, wherein the correlated electron material to comprise the particular dopant species, and wherein the correlated electron material to comprise an electron back-donating material.

2. The switching device of claim 1 , wherein the particular dopant species to operate to fill oxygen vacancies in the electron back-donating material.

3. The switching device of claim 1 , wherein a concentration of the electron back-donating material to comprise an atomic concentration of between 0.1% and 10.0%.

4. The switching device of claim 1 , wherein the correlated electron material to comprise nickel oxide.

5. The switching device of claim 4 , wherein the electrically conductive material to comprise titanium nitride, tantalum nitride or tungsten nitride, or any combination thereof.

6. The switching device of claim 1 , wherein the particular dopant species to comprise carbon, chlorine, nitrogen, fluorine, cyanide (CN), nitrosyl (NO), ammonia (NH3), oxynitride molecules (NxOy, wherein x and y comprise whole numbers and wherein x>0 and y>0) or molecules of the form CxHyNz (wherein x>0, y>0, z>0), or any combination thereof.

7. The switching device of claim 1 , wherein the correlated electron material further to comprise an additional dopant species, wherein the electrically conductive material to further comprise the additional dopant species.

8. A switching device, comprising:
an electrically conductive substrate;
a correlated electron material deposited over the electrically conductive substrate; and
an electrically conductive overlay deposited over the correlated electron material, wherein the correlated electron material to comprise a particular dopant species, wherein the correlated electron material to comprise an electron back-donating material, and wherein the electrically conductive substrate or the electrically conductive overlay, or a combination thereof, to comprise the particular dopant species.

9. The switching device of claim 8 , wherein the particular dopant species to comprise nitrogen, chlorine or carbon, or any combination thereof.

10. The switching device of claim 8 , wherein the particular dopant species to operate to fill oxygen vacancies in the correlated electron material.

11. The switching device of claim 8 , wherein the electrically conductive substrate to comprise titanium nitride, tantalum nitride or tungsten nitride, or any combination thereof.

12. The switching device of claim 8 , wherein the correlated electron material to comprise nickel oxide.

13. The switching device of claim 8 , wherein the correlated electron material to comprise a concentration of the electron back-donating material having an atomic concentration of between 0.1% and 10.0%.

14. The switching device of claim 8 , wherein the electrically conductive overlay to comprise titanium nitride, tantalum nitride or tungsten nitride, or any combination thereof.

15. The switching device of claim 8 , wherein the particular dopant species to comprise carbon, chlorine, nitrogen, fluorine, cyanide (CN), nitrosyl (NO), ammonia (NH3), oxynitride molecules (NxOy, wherein x and y comprise whole numbers and wherein x>0 and y>0) or molecules of the form CxHyNz (wherein x>0, y>0, z>0), or any combination thereof.

16. The switching device of claim 8 , wherein the correlated electron material further to comprise an additional dopant species, wherein the electrically conductive substrate or the electrically conductive overlay, or a combination thereof, further to comprise the additional dopant species.

Assignees

• Advanced Risc Mach Ltd

Inventors

• Reid Kimberly Gay
• Shifren Lucian

Classifications

• H10N70/046 Primary

  by diffusion, e.g. photo-dissolution · CPC title

• H10N99/03 Primary

  Devices using Mott metal-insulator transition, e.g. field-effect transistor-like devices · CPC title

• H10N70/841

  Electrodes · CPC title

• H10N70/20 Primary

  Multistable switching devices, e.g. memristors · CPC title

• H10N70/883

  Oxides or nitrides · CPC title