Semiconductor diode

Patent metadata

Field	Value
Publication number	US-10854598-B2
Application number	US-201514620772-A
Country	US
Kind code	B2
Filing date	Feb 12, 2015
Priority date	Nov 12, 2008
Publication date	Dec 1, 2020
Grant date	Dec 1, 2020

Abstract

A semiconductor diode with integrated resistor has a semiconductor body with a front surface, a back surface and a diode structure with an anode electrode and a cathode electrode. A resistance layer arranged on the back surface of the semiconductor body provides the integrated resistor.

First claim

What is claimed is:

1. A semiconductor boot-strap diode with an integrated charge current resistor, comprising:
a semiconductor body having a front surface and a back surface and including a cathode emitter zone defining the back surface;
a cathode electrode;
a cathode zone of a first conduction type;
an anode zone of a second conduction type;
a p-n junction between the cathode zone and the anode zone; and
a single unitary resistance layer disposed between the cathode emitter zone and the cathode electrode, the unitary resistance layer in direct contact with the cathode electrode and having a surface disposed on and uninterruptedly extending over the entire back surface at the cathode emitter zone of the semiconductor body and forming no p-n junction therewith, and the resistance layer providing an integrated charge current resistor where the resistance layer is in resistive contact with the cathode emitter zone.

2. The semiconductor boot-strap diode of claim 1 , wherein the resistance layer contacts the semiconductor material of the semiconductor body and is coated with an electrode material forming the cathode electrode.

3. The semiconductor boot-strap diode of claim 1 , wherein the semiconductor body includes a substrate which is doped more highly than the cathode zone and contributes to the thermal capacity and the resistance of the integrated charge current resistor.

4. The semiconductor boot-strap diode of claim 1 , wherein the resistance layer includes carbon.

5. The semiconductor boot-strap diode of claim 1 , wherein the resistance layer includes monocrystalline silicon, polycrystalline silicon or amorphous silicon.

6. The semiconductor boot-strap diode of claim 1 , wherein the semiconductor boot-strap diode includes a plurality of spaced cathode zones and a common anode zone with a transition to a resistance layer arranged on the back surface.

7. The semiconductor boot-strap diode of claim 6 , wherein a field stop zone is arranged between a common drift zone and the common anode zone.

8. The semiconductor boot-strap diode of claim 1 , wherein the resistance layer is formed of a single material.

9. The semiconductor boot-strap diode of claim 1 , wherein the surface of the resistance layer forms an interface with the cathode emitter zone.

10. A bridge circuit, comprising:
a low side driver for at least one low side power transistor, the low side driver including a power controller;
a high side driver for at least one high side power transistor, the high side driver including a capacitor providing a power supply for the high side driver; and
a semiconductor boot-strap diode including:
a semiconductor body having a front surface and a back surface and including a cathode emitter zone defining the back surface;
a cathode electrode;
a cathode zone of a first conduction type coupled to a cathode electrode;
an anode zone of a second conduction type coupled to an anode electrode;
at least one p-n junction between the cathode zone and the anode zone; and
a single unitary resistance layer disposed between the cathode emitter zone and the cathode electrode, the unitary resistance layer in direct contact with the cathode electrode and having a surface disposed on and uninterruptedly extending over the entire back surface at the cathode emitter zone of the semiconductor body and forming no p-n junction therewith, the resistance layer providing an integrated charge current resistor where the resistance layer is in resistive contact with the cathode emitter zone;

wherein the cathode electrode is electrically coupled to the capacitor and wherein the anode electrode is electrically coupled to the power controller via the integrated charge current resistor of the semiconductor boot-strap diode.

11. The circuit of claim 10 , wherein the resistance layer contacts the semiconductor material of the semiconductor body and is coated with an electrode material forming the cathode electrode.

12. The circuit of claim 10 , wherein the semiconductor body includes a substrate which is doped more highly than the cathode zone and contributes to the thermal capacity and the resistance of the integrated charge current resistor.

13. The circuit of claim 10 , wherein the resistance layer includes carbon.

14. The circuit of claim 10 , wherein the resistance layer includes monocrystalline silicon, polycrystalline silicon or amorphous silicon.

15. The circuit of claim 10 , wherein the semiconductor boot-strap diode includes a plurality of spaced cathode zones and a common anode zone with a transition to a resistance layer arranged on the back surface.

16. The circuit of claim 15 , wherein a field stop zone is arranged between a common drift zone and the common anode zone.

17. The circuit of claim 10 , wherein the resistance layer is formed of a single material.

18. The circuit of claim 10 , wherein the surface of the resistance layer forms an interface with the cathode emitter zone.

19. A semiconductor boot-strap diode with an integrated charge current resistor, comprising:
a semiconductor body having a front surface and a back surface and including a cathode emitter zone defining the back surface;
a cathode electrode;
at least one cathode zone of a first conduction type;
at least one anode zone of a second conduction type;
at least one p-n junction between the cathode zone and the anode zone; and
a single unitary resistance layer disposed between the cathode emitter zone and the cathode electrode, the unitary resistance layer in direct contact with the cathode electrode and forming a non-pn junction interface with the cathode emitter zone uninterruptedly extending over the entire back surface at the cathode emitter zone of the semiconductor body, and the resistance layer providing an integrated charge current resistor.

20. The semiconductor boot-strap diode of claim 19 , wherein the resistance layer is formed of a single material.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Mauder Anton
• Seng Philipp

Classifications

• H10D8/00

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D8/411 Primary

  PN diodes having planar bodies · CPC title

• H10D8/60

  Schottky-barrier diodes · CPC title

• H10D8/50

  PIN diodes · CPC title