Composition, patterned film, and electronic device including the same

Patent metadata

Field	Value
Publication number	US-10851297-B2
Application number	US-201916507461-A
Country	US
Kind code	B2
Filing date	Jul 10, 2019
Priority date	Jul 10, 2018
Publication date	Dec 1, 2020
Grant date	Dec 1, 2020

Abstract

A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.

First claim

What is claimed is:

1. A composition, comprising
a quantum dot not comprising cadmium;
a dispersing agent;
a polymerizable monomer comprising a carbon-carbon double bond;
an initiator; and
a solvent,
wherein the quantum dot comprises
a seed comprising a first semiconductor nanocrystal,
a quantum well comprising a second semiconductor nanocrystal, the quantum well surrounding the seed, and
a shell disposed on the quantum well, the shell comprising a third semiconductor nanocrystal,

the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and
an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.

2. The composition of claim 1 , wherein
when the quantum dot emits red light, a thickness of the quantum well is greater than or equal to about 0.9 nanometers and less than or equal to about 1.9 nanometers and
when the quantum dot emits green light, a thickness of the quantum well is greater than or equal to about 0.4 nanometers and less than or equal to about 1.4 nanometers.

3. The composition of claim 1 , wherein the seed has a radius of greater than or equal to about 0.5 nanometers.

4. The composition of claim 1 , wherein the shell has a thickness of greater than or equal to about 0.5 nanometers and less than or equal to about 4 nanometers.

5. The composition of claim 1 , wherein
the first semiconductor nanocrystal comprises zinc and selenium, sulfur, or a combination thereof, and
the third semiconductor nanocrystal comprises zinc and selenium, sulfur, or a combination thereof.

6. The composition of claim 1 , wherein
the first semiconductor nanocrystal comprises ZnSe, ZnSeS, ZnS, or a combination thereof, and
the third semiconductor nanocrystal comprises ZnSe, ZnSeS, ZnS, or a combination thereof.

7. The composition of claim 1 , wherein
the shell comprises two or more layers and
at least two adjacent layers comprise semiconductor nanocrystals comprising different compositions.

8. The composition of claim 1 , wherein the second semiconductor nanocrystal comprises a Group II-VI compound, a Group III-V compound, or a combination thereof.

9. The composition of claim 1 , wherein the second semiconductor nanocrystal comprises ZnSe, ZnTeSe, InP, InZnP, InAs, GaAs, or a combination thereof.

10. The composition of claim 1 , wherein a radius of the seed is greater than or equal to about 60% of a thickness of the shell.

11. The composition of claim 1 , wherein
a thickness of the shell is greater than or equal to about 1.3 nanometers and
a radius of the seed is greater than or equal to about 1.5 nanometers.

12. The composition of claim 1 , wherein the dispersing agent is an insulating polymer comprising a carboxylic acid group,
wherein the insulating polymer comprises
a copolymer of a monomer combination comprising
a first monomer comprising a carboxylic acid group and a carbon-carbon double bond,
a second monomer comprising a carbon-carbon double bond and a hydrophobic moiety and not comprising a carboxylic acid group and
optionally a third monomer comprising a carbon-carbon double bond and a hydrophilic moiety and not comprising a carboxylic acid group;
a multiple aromatic ring-containing polymer comprising a backbone structure wherein two aromatic rings are bound to a quaternary carbon atom that is a constituent atom of another cyclic moiety in the main chain, the multiple aromatic ring-containing polymer comprising a carboxylic acid group; or
a combination thereof.

13. The composition of claim 12 , wherein the insulating polymer has an acid value of greater than or equal to about 50 milligrams of potassium hydroxide per gram and less than or equal to about 240 milligrams of potassium hydroxide per gram.

14. The composition of claim 1 , wherein the composition further comprises
a multiple thiol compound comprising at least two thiol groups at a terminal end of the multiple thiol compound,
a metal oxide particulate, or
a combination thereof.

15. A patterned film comprising
a repeating section comprising a first section, the first section being configured to emit a first light,
wherein the first section comprises a quantum dot polymer composite,
the quantum dot-polymer composite comprises
a polymer matrix comprising
a dispersing agent,
a polymerization product of a photopolymerizable monomer comprising a carbon-carbon double bond, and
optionally a polymerization product of the photopolymerizable monomer and a multiple thiol compound comprising at least two thiol groups at a terminal end of the multiple thiol compound; and

a first quantum dot dispersed in the polymer matrix and configured to emit the first light,

the first quantum dot comprises
a seed comprising a first semiconductor nanocrystal,
a quantum well comprising a second semiconductor nanocrystal, the quantum well surrounding the seed and
a shell disposed on the quantum well, the shell comprising a third semiconductor nanocrystal and not comprising cadmium,

the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal,
an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal, and
the first quantum dot does not comprises cadmium.

16. The patterned film of claim 15 , wherein
when a maximum peak wavelength of the first light is within the range of about 500 nanometers to about 580 nanometers, a thickness of the quantum well is greater than or equal to about 0.9 nanometers and less than or equal to about 1.9 nanometers, and
when the maximum peak wavelength of the first light is within the range of about 600 nanometers to 650 nanometers, a thickness of the quantum well is greater than or equal to about 0.4 nanometers and less than or equal to about 1.4 nanometers.

17. The patterned film of claim 15 , wherein
the seed has a radius of greater than or equal to about 0.5 nanometers and
a thickness of the shell is greater than or equal to about 0.5 nanometers and less than or equal to about 4 nanometers.

18. The patterned film of claim 15 , wherein
the first semiconductor nanocrystal comprises zinc and selenium, sulfur, or a combination thereof,
the third semiconductor nanocrystal comprises zinc and sulfur, and
the second semiconductor nanocrystal comprises ZnSe, ZnTeSe, InP, InZnP, InAs, GaAs, or a combination thereof.

19. The patterned film of claim 15 , wherein a radius of the seed is greater than or equal to about 60% of a thickness of the shell.

20. The patterned film of claim 15 , wherein
a thickness of the shell is greater than or equal to about 1.3 nanometers and
a radius of the seed is greater than or equal to about 1.5 nanometers.

21. The patterned film of claim 15 , wherein
the repeating section comprises a second section to emit a second light having a different maximum peak wavelength from the first light and
the second section comprises a second quantum dot configured to emit the second light.

22. A display device, comprising
a light source and
a photoluminescence element,
wherein the photoluminescence element comprises
a substrate and
the patterned film of claim 15

Assignees

• Samsung Electronics Co Ltd
• Samsung Display Co Ltd
• Samsung Sdi Co Ltd

Inventors

• Kim Taekhoon
• Choi Seonmyeong
• Lee Jongmin
• Kim Tae Gon
• Park Young Seok
• Jun Shin Ae

Classifications

• H10H20/8512

  Wavelength conversion materials · CPC title

• C09K11/883 Primary

  with zinc or cadmium · CPC title

• C09D5/22

  Luminous paints {(luminescent compositions C09K11/00)} · CPC title

• C09K11/70

  containing phosphorus · CPC title

• C09K11/565

  with zinc cadmium · CPC title