Multilayer nanocrystal structure and method for producing the same

Patent metadata

Field	Value
Publication number	US-9926643-B2
Application number	US-201213665339-A
Country	US
Kind code	B2
Filing date	Oct 31, 2012
Priority date	Mar 26, 2007
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

Disclosed herein is a multilayer nanocrystal structure comprising a nanocrystal alloy core comprising two or more nanocrystals and including an alloy interlayer formed at an interface between the two or more nanocrystals, and one or more layers of nanocrystal shells formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells each have different band gaps. The multilayer nanocrystal structure can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability.

First claim

What is claimed is:

1. A multilayer nanocrystal structure comprising:
(a) a nanocrystal alloy core comprising two or more nanocrystal layers and including an alloy interlayer formed at an interface between the two or more nanocrystal layers and comprising a compositional gradient of two or more materials present at the interface of the two or more nanocrystal layers, wherein the compositional gradient ranges from 100% of a first nanocrystal material present at the interface of the interlayer with a first nanocrystal layer to 100% of a second nanocrystal material present at the interface of the interlayer with a second nanocrystal layer, wherein the first nanocrystal material and the second nanocrystal material are different from each other in terms of elemental compositions and the alloy interlayer is formed at between the first nanocrystal and the second nanocrystal and wherein the first nanocrystal material comprises CdS, CdSe, CdTe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs, or a mixture thereof and the second nanocrystal material comprises ZnS, ZnSe, or a combination thereof;
(b) one or more layers of nanocrystal shells, each having different band gaps, sequentially grown on a surface of the nanocrystal alloy core to form the nanocrystal shells such that a first layer of the nanocrystal shells covers the exposed surface of the nanocrystal alloy core, and each additional layer of the nanocrystal shells covers an exposed surface of a previous layer of the nanocrystal shells; and
(c) an organic material coordinated to the surface of the nanocrystal shells,
wherein the nanocrystal shells are selected from the group consisting of Group II-VI, Group III-V, Group IV-VI compounds, and mixtures thereof;
wherein the outermost shell of the nanocrystal shells has a band gap larger than any one band gap of the nanocrystal alloy core, and the inner shell layers have a smaller energy band gap compared to the nanocrystal alloy core, and
wherein the organic material is selected from the group consisting of C 6-24 alkanes and C 6-24 alkenes each having a terminal carboxylic acid (—COOH) functional group, C 6-24 alkanes and C 6-24 alkenes each having a terminal phosphoric acid (—PO(OH) 2 ) functional group, C 6-24 alkanes and C 6-24 alkenes each having a terminal sulfhydryl (—SH) functional group, C 6-24 alkanes and C 6-24 alkenes each having a terminal sulfinic acid (—SOOH) functional group, C 6-24 alkanes and C 6-24 alkenes each having a terminal sulfonic acid (—SO 3 H) functional group, and C 6-24 alkanes and C 6-24 alkenes each having a terminal amine (—NH 2 ) group.

2. The multilayer nanocrystal structure according to claim 1 , wherein the nanocrystal shells are selected from the group consisting of Group II-VI, Group III-V, and mixtures thereof.

3. The multilayer nanocrystal structure according to claim 1 , wherein the nanocrystal shells are made of one material selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs, C, Si, Ge, Sn, and a mixture thereof.

4. The multilayer nanocrystal structure according to claim 1 , wherein the first nanocrystal material comprises CdS, CdSe, CdTe, ZnTe, InP, InAs, or a mixture thereof and the second nanocrystal material consists of ZnS, ZnSe, or a combination thereof.

5. The multilayer nanocrystal structure according to claim 4 , wherein the first nanocrystal material comprises ZnTe, InP, or a mixture thereof.

6. An electronic device comprising the multilayer nanocrystal structure according to claim 1 .

7. The electronic device according to claim 6 , wherein the electronic device is an organic/inorganic hybrid electroluminescent device.

8. The electronic device according to claim 7 , wherein the electronic device includes a substrate, a hole injecting electrode disposed on a surface of the substrate, a hole transport layer disposed on a surface of the hole injecting electrode opposite the substrate, a light-emitting layer disposed on a surface of the hole transport layer opposite the hole injecting electrode, an electron transport layer disposed on a surface of the light-emitting layer opposite the hole transport layer, and an electron injecting electrode disposed on a surface of an electron transport layer opposite the light-emitting layer, in this order, wherein the light-emitting layer comprises a multilayer nanocrystal structure.

9. The electronic device according to claim 8 , wherein the multilayer nanocrystal structure is a multilayer semiconductor nanocrystal structure.

10. The multilayer nanocrystal structure according to claim 4 , wherein the nanocrystal alloy core comprises two or more materials selected from the group consisting of Group II-VI alloys, Group III-V alloys, and mixtures thereof.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jang Eun Joo
• Jun Shin Ae
• Lim Jung Eun
• Choi Hye Ran

Classifications

• C30B29/48

  AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te} · CPC title

• Y10T428/2989

  Microcapsule with solid core [includes liposome] · CPC title

• C30B29/605

  Products containing multiple oriented crystallites, e.g. columnar crystallites · CPC title

• C30B29/40

  AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi} · CPC title

• C30B7/14 Primary

  the crystallising materials being formed by chemical reactions in the solution · CPC title