Method and device for processing microstructure arrays of polystyrene-graphene nanocomposites

Patent metadata

Field	Value
Publication number	US-10850304-B2
Application number	US-201916717331-A
Country	US
Kind code	B2
Filing date	Dec 17, 2019
Priority date	Jan 21, 2019
Publication date	Dec 1, 2020
Grant date	Dec 1, 2020

Abstract

A device for processing microstructure arrays of polystyrene-graphene nanocomposites, including a laser generator, a vacuum chamber, an object stage, an ultraviolet filter and a gas flow control unit. The object stage is detachably fixed to a bottom of the vacuum chamber with a passage that can be opened or closed. The ultraviolet filter is provided in the vacuum chamber. A laser light emitted by the laser generator arrives at the object stage through the ultraviolet filter. The object stage is configured to place a sample to be processed. The gas flow control unit is communicated with the vacuum chamber and is configured to control the flow of the gas entering the vacuum chamber. The vacuum chamber is fixed on a three-axis precision positioning platform via a vacuum chamber clamp. The device disclosed herein aims to solve the existing difficulty in processing microstructure arrays of polystyrene-graphene nanocomposites.

First claim

What is claimed is:

1. A method for processing microstructure arrays of polystyrene-graphene nanocomposites, the method comprising:
(1) mixing polystyrene microsphere powders and absolute ethanol at a ratio of 1:1 to obtain a mixture, and then stirring the mixture by a magnetic stirrer for 10 min so as to uniformly disperse the polystyrene microsphere powders in the absolute ethanol to obtain a polystyrene microsphere ethanol solution;
(2) placing a silicon wafer with a size of 2 cm×2 cm on a workbench of a spin coater, dropwise adding the polystyrene microsphere ethanol solution obtained in step (1) on the silicon wafer by a pipettor, and spin coating the solution, wherein low and high rotation speeds of the spin coater are respectively set to 400 rpm and 1000 rpm and a spin-coating time is 50 seconds so that the polystyrene microsphere ethanol solution is uniformly coated on the silicon wafer;
(3) drying the silicon wafer coated with the polystyrene microsphere ethanol solution obtained in step (2) in a vacuum drying oven at a vacuum degree of 0.1 KPa at 60° C. for 1 h to obtain a sample, wherein an ethanol solution in the polystyrene microsphere ethanol solution volatilizes by said drying and polystyrene microspheres thereof form a compact monolayer structure;
(4) placing the sample dried in step (3) on an object stage in a vacuum chamber of a laser processing system, and locking the vacuum chamber to prevent outside gases from entering the vacuum chamber, the vacuum chamber being arranged on a three-axis precision positioning platform;
(5) controlling a movement of the three-axis precision positioning platform by a computer software control interface so as to position the sample below a laser generator, wherein an ultraviolet filter is located directly below the laser generator, and only ultraviolet light can pass through the ultraviolet filter, but light of other wavelengths is blocked, so that the sample is not damaged by the light of other wavelengths during laser processing;
(6) switching on a vacuum pump to reduce a pressure of the vacuum chamber to 0.1 KPa, and keeping the vacuum pump operating for more than 1 min, so that an oxygen content in the vacuum chamber is minimized to avoid burning of the sample when the sample is heated during the processing;
(7) introducing a shielding gas at a flow rate of 300 mL/min for 3 min while keeping the vacuum pump operating for more than 3 min, wherein the shielding gas is introduced to remove residual oxygen in the vacuum chamber so that free carbon and graphene generated during the processing are not oxidized and the sample does not burn when the sample is heated during the processing;
(8) turning off the vacuum pump, continuing to introduce the shielding gas until the pressure of the vacuum chamber is 100 KPa, and then shutting off the shielding gas so that the vacuum chamber is filled with the shielding gas to further dilute the residual oxygen in the vacuum chamber, thereby forming a shielding gas atmosphere in the vacuum chamber with a certain pressure preventing movements and damage of the sample due to sudden influx of external air;
(9) repeating steps (6)-(8) three times to remove a residual gas in the vacuum chamber, thereby preventing an adverse impact of the residual gas on the processing;
(10) turning on the vacuum pump and introducing the shielding gas, controlling a flow rate of the shielding gas to be 300 mL/min and the pressure of the vacuum chamber at 0.1 KPa, and maintaining a stable shielding gas atmosphere in the vacuum chamber until the processing is finished;
(11) performing the processing to form a pattern by using a laser drawing lines on the sample, wherein a spacing between the lines in the pattern is 0.03-0.05 mm;
(12) during said processing, adjusting parameters of the laser generator and adjusting a location of a laser focus to make a distance between the position of the sample being processed and the laser focus appropriate, and continuing the processing according to a predesigned pattern, wherein the distance is set so as not to be so close that high energy damages occur in the sample and is set so as not to be so far as to fail to convert a surface of the polystyrene microspheres into graphene by said processing; and
(13) controlling the three-axis precision positioning platform to a discharging point after said finishing of the processing and opening the vacuum chamber to take out a finished product, wherein a surface of the finished product has microstructure arrays of the graphene/polystyrene microsphere composites formed by said processing.

Assignees

• Univ Guangdong Technology

Inventors

• Chen Yun
• Long Junyu
• Zhou Shuang
• Chen Xin
• Gao Jian
• Liu Qiang
• Wong Ching-Ping
• Zhang Shenghui

Classifications

• C08K3/042 Primary

  Graphene or derivatives, e.g. graphene oxides · CPC title

• B23K26/128

  Laser beam path enclosures · CPC title

• B23K26/359

  by providing a line or line pattern, e.g. a dotted break initiation line · CPC title

• B05D3/065 Primary

  After-treatment · CPC title

• B23K26/04

  Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light · CPC title