Prelithiated and methods for prelithiating an energy storage device

Patent metadata

Field	Value
Publication number	US-10847792-B2
Application number	US-201816213826-A
Country	US
Kind code	B2
Filing date	Dec 7, 2018
Priority date	Dec 7, 2017
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

The present disclosure relates to prelithiated Si electrodes, methods of prelithiating Si electrodes, and use of prelithiated electrodes in electrochemical devices are described. There are several characteristics of electrode prelithiation that enable the superior battery performance. First, a prelithiated silicon anode is already in its expanded state during SEI formation, and therefore less of the SEI layer breaks down and reforms during cycling. Second, the prelithiated anode has a lower anode potential, which may also help the cycle performance of an electrochemical device.

First claim

What is claimed is:

1. An energy storage device comprising:
a first electrode and a second electrode, wherein at least one of the first electrode and the second electrode is a Si-based electrode, and wherein the Si-based electrode comprises a prelithiated silicon active material;
a separator between the first electrode and the second electrode; and
an electrolyte;
wherein the prelithiated silicon active material comprises a prelithiation level of above 0% to about 30% that corresponds to Li x Si with x ranging from 0.5 to 1.0, respectively, and the prelithiation is from a lithium additive in the electrolyte comprising excess sacrificial lithium ions; and
wherein an amount of the lithium additive is greater than what is needed to prelithiate the active material to a level between 0% to about 30%.

2. The energy storage device of claim 1 , wherein the prelithiated silicon active material comprises a prelithiation level of about 5%.

3. The energy storage device of claim 1 , wherein the prelithiated silicon active material comprises a prelithiation level of about 10%.

4. The energy storage device of claim 1 , wherein the prelithiated silicon active material comprises a prelithiation level of about 15%.

5. The energy storage device of claim 1 , wherein the prelithiated silicon active material comprises a prelithiation level of about 20%.

6. The energy storage device of claim 1 , wherein the prelithiated silicon active material comprises a prelithiation level of about 30%.

7. The energy storage device of claim 1 , wherein the prelithiated silicon active material further comprises a solid electrolyte interphase (SEI).

8. The energy storage device of claim 1 , wherein x is configured at a value above 0.5 where the lithiated silicon active material transitions from a crystalline phase to an amorphous phase.

9. The energy storage device of claim 1 , wherein the second electrode is a Si-dominant electrode.

10. The energy storage device of claim 1 , wherein the second electrode comprises a self-supporting composite material film.

11. The energy storage device of claim 10 , wherein the composite material film comprises:
greater than 0% and less than about 90% by weight of silicon particles, and
greater than 0% and less than about 90% by weight of one or more types of carbon phases, wherein at least one of the one or more types of carbon phases is a substantially continuous phase that holds the composite material film together such that the silicon particles are distributed throughout the composite material film.

12. The energy storage device of claim 1 , wherein the electrolyte further comprises fluoroethylene carbonate (FEC).

13. The energy storage device of claim 12 , wherein the electrolyte is substantially free of non-fluorine containing cyclic carbonate.

14. An electrode comprising:
a delithiated silicon active material;
wherein the delithiated silicon active material is characterized by the formula Li y Si, wherein y is greater than 0.5 and less than 1 and a prelithiation of the active material is from a lithium additive in the electrolyte comprising excess sacrificial lithium ions; and
wherein an amount of the lithium additive is greater than what is needed to prelithiate the active material to a level between 0% to about 30%.

15. The electrode of claim 14 , wherein y is greater than 0.5 and less than 0.9.

16. The electrode of claim 14 , wherein y is greater than 0.5 and less than 0.8.

17. The electrode of claim 14 , wherein y is greater than 0.5 and less than 0.7.

18. The electrode of claim 14 , wherein y is greater than 0.5 and less than 0.6.

19. The electrode of claim 14 , wherein the delithiated silicon active material further comprises a solid electrolyte interphase (SEI).

20. A method of prelithiating a silicon active material, comprising:
providing a silicon active material;
providing an electrolyte;
providing a lithium source; and
prelithiating the silicon active material using the lithium source, thereby producing a prelithiated silicon active material;
wherein the prelithiated silicon active material comprises a prelithiation level of above 0% to about 30% that corresponds to Li x Si with x ranging from 0.5 to 1.0, respectively, and the prelithiation is from a lithium additive in the electrolyte comprising excess sacrificial lithium ions; and
wherein an amount of the lithium additive is greater than what is needed to prelithiate the active material to a level between 0% to about 30%.

21. The method of claim 20 , wherein the lithium source comprises a sacrificial lithium source, the additive comprising less than 10% of the electrolyte.

22. The method of claim 20 , wherein the lithium source comprises a lithium metal source.

23. The method of claim 20 , wherein the electrolyte additive comprises less than 10% by weight of the electrolyte.

Assignees

• Enevate Corp

Inventors

• Park Benjamin Yong
• Bonhomme Frederic
• Teng Shiang Jen
• House Victor E

Classifications

• H01M4/0445

  Forming after manufacture of the electrode, e.g. first charge, cycling · CPC title

• H01M4/134

  Electrodes based on metals, Si or alloys · CPC title

• H01M10/0569

  characterised by the solvents · CPC title

• H01M4/364

  as mixtures · CPC title

• H01M4/386 Primary

  Silicon or alloys based on silicon · CPC title