Cryogenic oxidation of metal layer of magnetic-tunnel-junction (MTJ) device

Patent metadata

Field	Value
Publication number	US-10847713-B2
Application number	US-201916403320-A
Country	US
Kind code	B2
Filing date	May 3, 2019
Priority date	May 18, 2018
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

A method is for manufacturing a magnetic-tunnel-junction (MTJ) device. The method includes forming a free magnetic layer over a substrate, forming a metal layer over the free magnetic layer, and oxidizing the metal layer by exposing the metal layer to an oxidation gas at a temperature of 250° K or less.

First claim

What is claimed is:

1. A method of manufacturing a magnetic-tunnel-junction (MTJ) device, the method comprising:
forming a free magnetic layer over a substrate;
forming a metal layer over the free magnetic layer;
oxidizing the metal layer by exposing the metal layer to a first oxidation gas at a first temperature of 250° K or less; and
further exposing the metal layer to a second oxidation gas at a second temperature that is higher than the first temperature.

2. The method of claim 1 , wherein at least one of the first and second oxidation gases is supplied from a shower head located at a distance between 10 and 30 mm, both inclusive, over a surface of the metal layer.

3. The method of claim 1 , wherein both of the first and second oxidation gases are supplied from a shower head located at a distance between 10 and 30 mm, both inclusive, over a surface of the metal layer.

4. The method of claim 1 , wherein the first temperature is equal to or less than 230° K.

5. The method of claim 1 , wherein the first temperature is equal to or less than 200° K.

6. The method of claim 1 , wherein the second temperature is equal to or greater than 270° K.

7. The method of claim 1 , wherein the metal layer is exposed to the first oxidation gas at the first temperature for 50 to 100 seconds, both inclusive, and the metal layer is exposed to the second oxidation gas at the second temperature for 70 to 120 seconds, both inclusive.

8. The method of claim 1 , wherein the first oxidation gas and the second oxidation gas a same oxidation gas.

9. The method of claim 8 , wherein the metal layer is continuously exposed to the same oxidation gas as a temperature of the substrate transitions from the first temperature to the second temperature.

10. The method of claim 8 , wherein exposing the metal layer to the first oxidation gas at the first temperature is carried out in a same chamber as exposing the metal layer to the second oxidation gas at the second temperature.

11. The method of claim 1 , further comprising:
placing a wafer containing the MTJ device on an electrostatic chuck, the electromagnetic chuck in thermal contact with a cooling plate located below the electrostatic chuck; and
cooling the electrostatic chuck using the cooling plate so as to cool the wafer to the first temperature.

12. The method of claim 1 , further comprising:
placing a wafer containing the MTJ device on an electrostatic chuck, the electromagnetic chuck in thermal contact with a cooling plate located below the electrostatic chuck;
cooling the electrostatic chuck using the cooling plate so as to cool the wafer to the first temperature; and
raising a temperature of the wafer to the second temperature.

13. The method of claim 12 , wherein raising the temperature of the wafer to the second temperature comprises lifting the wafer off a support surface of the electrostatic chuck.

14. The method of claim 12 , wherein raising the temperature of the wafer to the second temperature comprises using a lamp to heat the wafer.

15. The method of claim 1 , further comprising:
forming a lower electrode over the substrate;
forming a fixed magnetic layer over the lower electrode;
forming a tunnel barrier layer over the fixed magnetic layer,
wherein the free magnetic layer is formed over the tunnel barrier layer.

16. The method of claim 15 , wherein the fixed magnetic layer is formed from a seed layer deposited on the lower electrode.

17. The method of claim 15 , wherein the fixed magnetic layer is formed as a multilayer structure comprising plural fixed magnetic sublayers.

18. The method of claim 15 , further comprising forming an upper electrode over the metal layer after oxidation of the metal layer.

19. The method of claim 1 , wherein the metal layer is formed to include at least one of tantalum, zirconium, titanium, vanadium, yttrium, scandium, molybdenum, magnesium, and cobalt.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Whan Kyun
• Noh Eun Sun
• Lee Joon Myoung
• Lim Woo Chang
• Jeong Jun Ho

Classifications

• H10D86/421

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• H10D86/60

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• H10N50/85

  Materials of the active region · CPC title

• H10N50/01 Primary

  Manufacture or treatment · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title