In-situ deposition and etch process and apparatus for precision patterning of semiconductor devices

Patent metadata

Field	Value
Publication number	US-10847376-B2
Application number	US-201916380260-A
Country	US
Kind code	B2
Filing date	Apr 10, 2019
Priority date	Jun 28, 2018
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

A first material layer, a second material layer, and a photoresist layer may be formed over a substrate. The second material layer may be patterned by transfer of a lithographic pattern therethrough. A conformal spacer layer may be formed over the patterned second material layer in a chamber enclosure of an in-situ deposition-etch apparatus. Spacer films may be formed by anisotropically etching the conformal spacer layer in the chamber enclosure of the in-situ deposition-etch apparatus. The first material layer may be anisotropically etched using a combination of the patterned second material layer and the spacer films as an etch mask in the in-situ deposition-etch apparatus. A high fidelity pattern may be transferred into the first material layer with reduced line edge roughness, reduced line width roughness, and without enlargement of lateral dimensions of openings in the first material layer.

First claim

What is claimed is:

1. A method of patterning a structure, comprising:
forming a first material layer, a second material layer, and a photoresist layer over a substrate;
lithographically patterning the photoresist layer;
forming a patterned second material layer by transferring a pattern in the photoresist layer through the second material layer using a first anisotropic etch process;
depositing a conformal spacer layer over the patterned second material layer in a chamber enclosure of an in-situ deposition-etch apparatus;
forming spacer films by anisotropically etching the conformal spacer layer in the chamber enclosure of the in-situ deposition-etch apparatus; and
anisotropically etching portions of the first material layer located between the substrate and bottom surfaces of the spacer films using a combination of the patterned second material layer and the spacer films as an etch mask in the in-situ deposition-etch apparatus.

2. The method of claim 1 , wherein a combination of the substrate, the first material layer, and the second material layer remain in the in-situ deposition-etch apparatus from a processing step for depositing the conformal spacer layer to a processing step for anisotropically etching the portions of the first material layer located between the substrate and bottom surfaces of the spacer films.

3. The method of claim 1 , wherein the conformal spacer layer is formed by performing an atomic layer deposition process in which a metallic precursor gas and an agent gas selected from an oxidizing agent gas and a nitriding agent gas are alternately flowed into the chamber enclosure of the in-situ deposition-etch apparatus.

4. The method of claim 1 , wherein the conformal spacer layer comprises a material selected from silicon oxide or silicon nitride.

5. The method of claim 1 , wherein the conformal spacer layer comprises a material selected from carbon, titanium oxide, titanium nitride, aluminum oxide, aluminum nitride, nickel oxide, tungsten oxide, zirconium oxide, hafnium oxide, hafnium nitride, vanadium oxide, or vanadium nitride.

6. The method of claim 1 , wherein the first material layer comprises a silicon oxide material.

7. The method of claim 1 , wherein the first material layer comprises a carbon-based material including carbon atoms at an atomic concentration greater than 50%.

8. The method of claim 1 , further comprising forming in-process cavities in an upper region of the first material layer by performing a second anisotropic etch process that transfers a pattern in the patterned second material layer into the upper region of the first material layer, wherein the conformal spacer layer is deposited on sidewalls and bottom surfaces of the in-process cavities.

9. The method of claim 8 , wherein a combination of the substrate, the first material layer, and the second material layer remain in the in-situ deposition-etch apparatus from a processing step for the first anisotropic etch process to a processing step for anisotropically etching the portions of the first material layer located between the substrate and bottom surfaces of the spacer films.

10. The method of claim 8 , wherein at least a portion of the spacer films remain on sidewalls of the first material layer after top surfaces of the substrate are physically exposed.

11. The method of claim 10 , further comprising removing remaining portions of the spacer films from the sidewalls of the first material layer selective to a material of the first material layer after the top surfaces of the substrate are physically exposed.

12. The method of claim 1 , wherein:
the first anisotropic etch process etches a material of the second material layer selective to a material of the first material layer; and
a horizontal surface of the first material layer on which the conformal spacer layer is deposited is vertically spaced from a top surface of the substrate by at least 95% of a vertical thickness of the first material layer prior to the first anisotropic etch process.

13. The method of claim 12 , wherein a lateral thickness of the spacer films gradually decreases during a second anisotropic etch process that anisotropically etches the portions of the first material layer located between the substrate and bottom surfaces of the spacer films.

14. The method of claim 13 , wherein the spacer films are completely consumed during the second anisotropic etch process.

15. The method of claim 13 , wherein:
in-process cavities formed during the second anisotropic etch process in the first material layer have tapered surfaces that have a first taper angle after etching through 10% of a total thickness of the first material layer; and
cavities formed after the second anisotropic etch process in the first material layer have a second taper angle that is less than the first taper angle.

16. The method of claim 15 , wherein the first taper angle is greater than the second taper angle by a difference in a range from 1 degree to 10 degrees.

Assignees

• Sandisk Technologies Llc

Inventors

• Osawa Yusuke
• Fukata Syo
• Umehara Naoto
• Lee Sung Tae

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title