High voltage resistive output stage circuit

Patent metadata

Field	Value
Publication number	US-10847346-B2
Application number	US-201916599318-A
Country	US
Kind code	B2
Filing date	Oct 11, 2019
Priority date	Feb 28, 2014
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

Some embodiments include a high voltage, high frequency switching circuit. The switching circuit may include a high voltage switching power supply that produces pulses having a voltage greater than 1 kV and with frequencies greater than 10 kHz and an output. The switching circuit may also include a resistive output stage electrically coupled in parallel with the output and between the output stage and the high voltage switching power supply, the resistive output stage comprising at least one resistor that discharges a load coupled with the output. In some embodiments, the resistive output stage may be configured to discharge over about 1 kilowatt of average power during each pulse cycle. In some embodiments, the output can produce a high voltage pulse having a voltage greater than 1 kV and with frequencies greater than 10 kHz with a pulse fall time less than about 400 ns.

First claim

That which is claimed:

1. A high voltage, high frequency switching circuit comprising:
a high voltage switching power supply that produces pulses having a voltage greater than 1 kV and with frequencies greater than 10 kHz;
an output; and
a resistive output stage electrically coupled to the output of the high voltage switching power supply, the resistive output stage comprising at least one resistor that discharges a load coupled with the output, the resistive output stage configured to dissipate over about 1 kilowatt of average power,
wherein the output is coupled with a plasma load that is largely capacitive.

2. The high voltage, high frequency switching circuit according to claim 1 , wherein the high voltage switching power supply comprises a power supply, at least one switch, and a step-up transformer.

3. The high voltage, high frequency switching circuit according to claim 1 , wherein the output is coupled with a plasma load that includes a dielectric barrier discharge.

4. The high voltage, high frequency switching circuit according to claim 1 , wherein the resistance of the resistor in the resistive output stage has a value less than about 400 ohms.

5. The high voltage, high frequency switching circuit according to claim 1 , wherein the high voltage high frequency switching power supply delivers peak powers greater than 100 kW.

6. The high voltage, high frequency switching circuit according to claim 1 , wherein the resistor in the resistive output stage includes a resistance R and the output is coupled with a load having a capacitance C such that R C/tf where tf is the pulse fall time.

7. The high voltage, high frequency switching circuit according to claim 1 , wherein the load is capacitive in nature with a capacitance less than 50 nF, wherein the load capacitance does not hold charges for times greater than 10 μs.

8. The high voltage, high frequency switching circuit according to claim 1 , wherein the load is capacitive in nature and the high voltage, high frequency switching circuit rapidly charges the load capacitance and discharges the load capacitance.

9. The high voltage, high frequency switching circuit according to claim 1 , wherein the output produces a negative bias voltage within a plasma of greater than −2 kV when the high voltage switching power supply is not providing a high voltage pulse.

10. The high voltage, high frequency switching circuit according to claim 1 , wherein the output can produce a high voltage pulse having a voltage greater than 1 kV and with frequencies greater than 10 kHz with pulse fall times less than about 400 ns.

11. The high voltage, high frequency switching circuit according to claim 1 , wherein the resistive output stage comprises at least one inductor in series with the at least one resistor.

12. A high voltage, high frequency switching circuit comprising:
a high voltage switching power supply that produces pulses having a voltage greater than 1 kV and with frequencies greater than 10 kHz;
an output; and
a sink stage electrically coupled with the output of the high voltage switching power supply, the sinkstage comprising at least one inductor, the sink stage rapidly removes charge from a load coupled with the output,
wherein the output can produce a high voltage pulse having a voltage greater than 1 kV and with frequencies greater than 10 kHz and with a pulse fall time less than about 400 ns.

13. The high voltage, high frequency switching circuit according to claim 12 , wherein the sink stage comprises at least one resistor in series with the inductor.

14. The high voltage, high frequency switching circuit according to claim 12 , wherein the sink stage handles a peak power greater than 10 kW.

15. The high voltage, high frequency switching circuit according to claim 13 , wherein the resistance of the resistor in the sink stage is less than about 400 ohms.

16. The high voltage, high frequency switching circuit according to claim 12 , wherein the high voltage switching power supply establishes a potential within a plasma that is used to accelerate ions into a surface.

17. The high voltage, high frequency switching circuit according to claim 12 , wherein the output produces a negative bias voltage within a plasma of greater than 2 kV when the high voltage switching power supply is not providing a high voltage pulse.

18. A high voltage, high frequency switching circuit comprising:
a high voltage switching power supply that produces pulses having a voltage greater than 1 kV and with frequencies greater than 10 kHz;
an electrode disposed within a plasma chamber, the electrode coupled with the high voltage switching power supply; and
a sink stage electrically coupled with the output of the high voltage switching power supply and the electrode,
wherein the high voltage switching power supply produces high voltage pulses having a voltage greater than 1 kV with frequencies greater than 10 kHz and with pulse fall times less than about 400 ns, and wherein the output is electrically coupled to a plasma type load.

19. The high voltage, high frequency switching circuit according to claim 18 , wherein the sink stage comprises at least one inductor in series with at least one resistor.

20. The high voltage, high frequency switching circuit according to claim 18 , wherein the plasma type load can be modeled as having capacitive elements less than 20 nF in size.

21. The high voltage, high frequency switching circuit according to claim 18 , wherein the plasma type load is designed to accelerate ions in the plasma type load into a surface.

22. The high voltage, high frequency switching circuit according to claim 18 , wherein the high voltage high frequency switching power supply delivers peak powers greater than 100 kW.

23. The high voltage, high frequency switching circuit according to claim 18 , wherein the high voltage switching power supply comprises a power supply, at least one switch, and a step-up transformer.

24. The high voltage, high frequency switching circuit according to claim 18 , wherein the sink stage comprises at least one inductor.

25. The high voltage, high frequency switching circuit according to claim 18 , wherein the sink stage rapidly removes charge from the electrode.

Assignees

• Eagle Harbor Tech Inc

Inventors

• Ziemba Timothy M
• Miller Kenneth E
• Prager James R
• Carscadden John G
• Slobodov Ilia

Classifications

• H03K3/53

  by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback (H03K3/335 takes precedence) · CPC title

• H01J37/32146

  Amplitude modulation, includes pulsing · CPC title

• H01J37/32091

  the radio frequency energy being capacitively coupled to the plasma · CPC title

• H01J37/32174 Primary

  Circuits specially adapted for controlling the RF discharge · CPC title

• H01J37/32348

  Dielectric barrier discharge · CPC title