Optical semiconductor element and method of driving optical semiconductor element

Patent metadata

Field	Value
Publication number	US-10840406-B2
Application number	US-201815903200-A
Country	US
Kind code	B2
Filing date	Feb 23, 2018
Priority date	Apr 17, 2017
Publication date	Nov 17, 2020
Grant date	Nov 17, 2020

Abstract

An optical semiconductor element includes: an optical waveguide body; a first electrode that is disposed on the second clad layer; a second electrode that is disposed on a second clad layer on one side of the first electrode in a light guiding direction of the optical waveguide body; a third electrode that is disposed on the second clad layer on the other side of the first electrode in the light guiding direction; and at least one fourth electrode that faces the first electrode, the second electrode, and the third electrode with the optical waveguide body interposed therebetween. The optical waveguide body includes a first separation region that electrically separates a first region under the first electrode from a second region under the second electrode and a second separation region that electrically separates the first region under the first electrode and a third region under the third electrode.

First claim

What is claimed is:

1. An optical semiconductor element comprising:
an optical waveguide body that is configured as a double heterostructure including an active layer and a first clad layer and a second clad layer between which the active layer is interposed;
a first electrode that is disposed on the second clad layer;
a second electrode that is disposed on the second clad layer on one side of the first electrode in a light guiding direction of the optical waveguide body;
a third electrode that is disposed on the second clad layer on other side of the first electrode in the light guiding direction of the optical waveguide body; and
at least one fourth electrode that faces the first electrode, the second electrode, and the third electrode with the optical waveguide body interposed therebetween,
wherein the optical waveguide body includes a first separation region that electrically separates a first region under the first electrode from a second region under the second electrode and a second separation region that electrically separates the first region under the first electrode and a third region under the third electrode,
wherein the first region serves as a gain region by applying a forward bias between the first electrode and the at least one fourth electrode,
wherein the second region serves as a loss region by applying a reverse bias between the second electrode and the at least one fourth electrode,
wherein the third region serves as a modulation region by alternately applying a first bias and a second bias having different magnitudes between the third electrode and the at least one fourth electrode, and
wherein at least a part of the second electrode and at least a part of the third electrode are arranged on a straight line parallel with a direction in which light travels in the first region.

2. The optical semiconductor element according to claim 1 , wherein each of the first separation region and the second separation region includes an ion injection region, an impurity diffusion region, or a semiconductor region of a conduction type different from the conduction type of the second clad layer.

3. The optical semiconductor element according to claim 1 , wherein each of the first separation region and the second separation region extends from a surface of the second clad layer to the first clad layer.

4. The optical semiconductor element according to claim 1 , wherein the first bias is a forward bias and the second bias is a reverse bias.

5. The optical semiconductor element according to claim 1 , wherein the first bias and the second bias are reverse biases.

6. The optical semiconductor element according to claim 1 , wherein an end face on a side opposite to the first region in the third region is a face perpendicular to the light guiding direction.

7. The optical semiconductor element according to claim 1 , wherein a low-reflection layer is disposed on an end face on a side opposite to the first region in the third region.

8. The optical semiconductor element according to claim 1 , further comprising a substrate on which the optical waveguide body is disposed.

9. The optical semiconductor element according to claim 8 , wherein the optical waveguide body is formed in a ridge structure on the substrate.

10. The optical semiconductor element according to claim 1 , wherein a length of the third region in the light guiding direction is shorter than a length of the first region and of the second region in the light guiding direction.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Yamanishi Masamichi
• Higuchi Akira
• Hirohata Toru
• Tanaka Kazunori
• Fujita Kazuue
• Takagi Yasufumi
• Aoki Yuta
• OKAWARA Satoru

Classifications

• H10H20/831

  characterised by their shape · CPC title

• H10H20/8252

  characterised by the dopants · CPC title

• H10H20/841

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/819

  characterised by their shape, e.g. curved or truncated substrates · CPC title