Light source and optical coherence tomography apparatus including the light source

Patent metadata

Field	Value
Publication number	US-10109762-B2
Application number	US-201314431715-A
Country	US
Kind code	B2
Filing date	Sep 26, 2013
Priority date	Sep 28, 2012
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

A light source includes an upper electrode layer, a lower electrode layer, and an active layer interposed therebetween. At least one of the upper and lower electrode layers is divided into a plurality of electrodes separated from each other in an in-plane direction of the active layer. The separated electrodes independently inject current into a plurality of different regions in the active layer. The light source emits light by injecting current from the upper and lower electrode layers into the active layer, guide the light in the in-plane direction, and output the light. The plurality of different regions in the active layer include a first region not including a light exit end and a second region including the light exit end, and the second region is configured to emit light of at least first-order level. The active layer has an asymmetric multiple quantum well structure.

First claim

The invention claimed is:

1. A super luminescent diode comprising:
a first electrode layer which includes a first electrode and a second electrode;
a second electrode layer;
an active layer interposed between the first electrode layer and the second electrode layer; and
a control unit configured to control current injected into the first electrode and the second electrode,
wherein the first electrode and the second electrode is disposed in an in-plane direction of the active layer;
wherein the first electrode and the second electrode are configured to independently inject current into a plurality of different regions in the active layer;
wherein the plurality of different regions in the active layer include a first region not including a light exit end of the super luminescent diode and a second region including the light exit end of the super luminescent diode;
wherein the active layer has an asymmetric multiple quantum well structure;
wherein light emitted from the first region and passed through the second region is output from the super luminescent diode; and
wherein the control unit is configured to perform the control such that a density of current injected into the first electrode is less than 14% of a density of current injected into the second electrode.

2. The super luminescent diode according to claim 1 , wherein a carrier density in the second region is greater than a transparent carrier density.

3. The super luminescent diode according to claim 1 , wherein the second region has a dominant peak at an energy level higher than that of a dominant peak of light incident on the second region.

4. The super luminescent diode according to claim 1 , wherein a current density in the second region is greater than or equal to 80% of a saturated current density.

5. The super luminescent diode according to claim 1 , wherein the control unit is configured to control a density of current injected into the first electrode so that the density of current injected into the first electrode is less than 11% of a density of current injected into the second electrode.

6. The super luminescent diode according to claim 1 , wherein the control unit is configured to control a density of current injected into the first electrode so that the density of current injected into the first electrode is more than 0% of a density of current injected into the second electrode.

7. The super luminescent diode according to claim 1 , wherein the control unit is configured to control a density of current injected into the first electrode so that the density of current injected into the first electrode is more than or equal to 3% of a density of current injected into the second electrode.

8. The super luminescent diode according to claim 1 , wherein the first region and the second region each independently have an asymmetric multiple quantum well structure, and include a quantum well capable of emitting light at two or more different quantum levels.

9. The super luminescent diode according to claim 1 , wherein the first region and the second region have the same active layer.

10. The super luminescent diode according to claim 1 , wherein the first electrode and the second electrode are electrically connected to each other by a resistance element; and
current is injected into the second region and the first region by applying a voltage to the second electrode.

11. The super luminescent diode according to claim 1 ,
wherein the first electrode and the second electrode are electrically connected to each other by a semiconductor layer; and
current is injected into the second region and the first region by applying a voltage to the second electrode.

12. The super luminescent diode according to claim 1 , wherein the control unit performs control such that the second largest peak value of a point spread function of an emission spectrum of light emitted from the first region and passed through the second region is less than or equal to 30% of the largest peak value.

13. An optical coherence tomography apparatus comprising:
the super luminescent diode according to claim 1 ;
an interference optical system configured to divide light from the super luminescent diode into reference light and irradiation light operable to irradiate and be reflected from an object, and generate interference light based on the reference light and the reflected irradiation light;
a wavelength dispersing unit configured to disperse a wavelength of the interference light;
a light detecting unit configured to receive the interference light whose wavelength has been dispersed; and
an information obtaining unit operable to obtain information about the object on the basis of an intensity of the interference light.

14. The super luminescent diode according to claim 1 , wherein an emission spectrum of light which is output from the super luminescent diode, has a substantially Gaussian shape.

15. The super luminescent diode according to claim 1 , further comprising
a first contact layer which is disposed between the first electrode and the active layer;
a second contact layer which is disposed between the second electrode and the active layer;
wherein the first contact layer contacts the first electrode, the second contact layer contacts the second electrode, and the first contact layer and the second contact layer are spaced apart.

16. The super luminescent diode according to claim 1 ,
wherein the first region emits light of at least ground level and the second region emits light of at least first-order level.

Assignees

• Canon Kk

Inventors

• Yamagata Kenji
• Matsuu Toshimitsu
• Yoshioka Takeshi
• Uchida Takeshi

Classifications

• G01N21/4795

  spatially resolved investigating of object in scattering medium (in vivo A61B) · CPC title

• G01B9/02091

  Tomographic interferometers, e.g. based on optical coherence · CPC title

• G01B9/02044 Primary

  Imaging in the frequency domain, e.g. by using a spectrometer · CPC title

• H01L27/153

  Electricity · mapped topic

• H01L33/0045 Primary

  Electricity · mapped topic