Cross point array memory in a non-volatile dual in-line memory module

Patent metadata

Field	Value
Publication number	US-10839862-B2
Application number	US-201816226626-A
Country	US
Kind code	B2
Filing date	Dec 19, 2018
Priority date	Apr 25, 2018
Publication date	Nov 17, 2020
Grant date	Nov 17, 2020

Abstract

An indication of a power loss can be received at a cross point array memory dual in-line memory module (DIMM) operation component of a memory sub-system. The cross point array memory DIMM operation component includes a volatile memory component and a non-volatile cross point array memory component. In response to receiving the indication of the power loss, a type of write operation for the non-volatile cross point array memory component of the cross point array memory DIMM operation component is determined based on a characteristic of the memory sub-system. Data stored at the volatile memory component of the cross point array memory DIMM operation component is retrieved and written to the non-volatile cross point array memory component of the cross point array memory DIMM operation component by using the determined type of write operation.

First claim

What is claimed is:

1. A system comprising:
a volatile memory component;
a non-volatile cross point array memory component; and
a processing device, operatively coupled with the volatile memory component and the non-volatile cross point array memory component, to:
receive an indication of a power loss to the system;
determine a characteristic of the system;
in response to receiving the indication of the power loss to the system, determine, based on the characteristic of the system, a type of write operation from a plurality of types of write operations for the non-volatile cross point array memory component;
retrieve data stored at the volatile memory component; and
write the retrieved data to the non-volatile cross point array memory component by using the determined type of write operation.

2. The system of claim 1 , wherein the plurality of types of write operations for the non-volatile cross point array memory component comprises:
a pre-scan write operation that writes the retrieved data to the non-volatile cross point array memory component based on a comparison between data blocks of the retrieved data and other data blocks stored at the non-volatile cross point array memory component; and
a force write operation that writes each data block of the retrieved data stored in the volatile memory component to the non-volatile cross point array memory component.

3. The system of claim 1 , wherein the characteristic of the system corresponds to an energy level of a backup power source that provides a backup power to the system responsive to the power loss, and wherein the processing device is further to:
determine whether the energy level of the backup power source satisfies an energy level threshold, and wherein determining the type of write operation is based on the determination of whether the energy level of the backup power source satisfies the energy level threshold, and wherein the energy level threshold is based on a particular energy level that is sufficient to write the retrieved data to the non-volatile cross point array memory component.

4. The system of claim 1 , wherein the characteristic of the system corresponds to an amount of the data stored in the volatile memory component to be written to the non-volatile cross point array memory component, and wherein the processing device is further to:
determine whether the amount of the data stored in the volatile memory component to be written to the non-volatile cross point array memory component satisfies a data size threshold, wherein determining the type of write operation is based on the determination of whether the amount of the data satisfies the data size threshold, and wherein the data size threshold is based on an energy level of a backup power source for the system being sufficient to write the amount of the data to the non-volatile cross point array memory component.

5. The system of claim 1 , wherein the characteristic of the system corresponds to a classification of data blocks of the data, wherein the determined type of write operation for a particular data block of the data is based on a corresponding classification for each particular data block of the data.

6. The system of claim 2 , wherein to write data stored in the volatile memory component to the non-volatile cross point array memory component by using the pre-scan write operation, the processing device is further to:
determine one or more data blocks of the non-volatile cross point array memory component where the data stored in the volatile memory component is to be written;
compare data from each data block in the one or more data blocks of the non-volatile cross point array memory component with data from a corresponding data block of the data retrieved from the volatile memory component;
determine a subset of the one or more data blocks of the non-volatile cross point array memory component having data different from data of a corresponding data block of the volatile memory component; and
write, to the subset of the one or more data blocks of the non-volatile cross point array memory component, data of a corresponding data block stored in the volatile memory component.

7. The system of claim 1 , wherein the system is a dual in-line memory module (DIMM).

8. A method comprising:
receiving an indication of a power loss to a memory sub-system, the memory sub-system comprising a volatile memory component and a non-volatile cross point array memory component;
determining a characteristic of the memory sub-system;
in response to receiving the indication of the power loss to the memory sub-system, determining, based on the characteristic of the memory sub-system, a type of write operation from a plurality of types of write operations for the non-volatile cross point array memory component;
retrieving data stored at the volatile memory component; and
writing, by a processing device, the retrieved data to the non-volatile cross point array memory component by using the determined type of write operation.

9. The method of claim 8 , wherein the plurality of types of write operations for the non-volatile cross point array memory component comprises:
a pre-scan write operation that writes the retrieved data to the non-volatile cross point array memory component based on a comparison between data blocks of the retrieved data and other data blocks stored at the non-volatile cross point array memory component; and
a force write operation that writes each data block of the retrieved data stored in the volatile memory component to the non-volatile cross point array memory component.

10. The method of claim 8 , wherein the characteristic of the memory sub-system corresponds to an energy level of a backup power source that provides a backup power to the memory sub-system responsive to the power loss, and wherein the method further comprising:
determining whether the energy level of the backup power source satisfies an energy level threshold; and
wherein determining the type of write operation is based on the determination of whether the energy level of the backup power source satisfies the energy level threshold, wherein the energy level threshold is based on a particular energy level that is sufficient to write the retrieved data to the non-volatile cross point array memory component.

11. The method of claim 8 , wherein the characteristic of the memory sub-system corresponds to an amount of the data stored in the volatile memory component to be written to the non-volatile cross point array memory component, and wherein the method further comprising:
determining whether the amount of the data stored in the volatile memory component to be written to the non-volatile cross point array memory component satisfies a data size threshold; and
wherein determining the type of write operation is based on the determination of whether the amount of the data satisfies the data size threshold, wherein the data size threshold is based on an energy level of a backup power source for the memory sub-system being sufficient to write the amount of the data to the non-volatile cross point array memory component.

12. The method of claim 8 , wherein the characteristic of the memory sub-system corresponds to a classification of data blocks of the data, wherein the determined type of write operation for a particular data block of the data is based on a corresponding classification for each particular data block of the data.

13. The method of claim 9 , wherein writing the data stored in the volatile memory component to the non-volatile cross point array memory component by using the pre-scan write operation comprises:
determining one or

Assignees

• Micron Technology Inc

Inventors

• Mcglaughlin Edward
• Tai Ying Yu
• Mittal Samir

Classifications

• G06F3/0659

  Command handling arrangements, e.g. command buffers, queues, command scheduling · CPC title

• G06F3/0688

  Non-volatile semiconductor memory arrays · CPC title

• G06F3/0647

  Migration mechanisms · CPC title

• G06F3/0619 Primary

  in relation to data integrity, e.g. data losses, bit errors · CPC title

• G06F3/0605

  by facilitating the interaction with a user or administrator · CPC title