Compound varactor
US-2016365427-A1 · Dec 15, 2016 · US
Dual-series varactor EPI
US10833071B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10833071-B2 |
| Application number | US-201816053211-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 2, 2018 |
| Priority date | May 8, 2014 |
| Publication date | Nov 10, 2020 |
| Grant date | Nov 10, 2020 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A semiconductor device includes a first varactor diode and a second varactor diode. The second varactor diode is coupled in series with the first varactor diode and vertically disposed over the first varactor diode. By vertically disposing the second varactor diode over the first varactor diode, the space occupied by the pair of varactor diodes can be significantly reduced.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a first varactor diode comprising a first plurality of epitaxial layers, wherein the first plurality of epitaxial layers comprises: a first anode contact layer; a first anode layer over the first anode contact layer; a first varactor layer over the first anode layer; and a first cathode contact layer over the first varactor layer; and a second varactor diode coupled in series with the first varactor diode and comprising a second plurality of epitaxial layers, which are over the first plurality of epitaxial layers, wherein the second plurality of epitaxial layers comprises: a second anode contact layer over the first cathode contact layer; a second anode layer over the second anode contact layer; a second varactor layer over the second anode layer; and a second cathode contact layer over the second varactor layer. 2. The semiconductor device of claim 1 wherein the first varactor diode further comprises: an anode contact on the first anode contact layer; and a cathode contact on the first cathode contact layer. 3. The semiconductor device of claim 2 wherein the second varactor diode further comprises: an anode contact on the second anode contact layer; and a cathode contact on the second cathode contact layer. 4. The semiconductor device of claim 3 further comprising a metallization layer connecting the cathode contact of the first varactor diode to the anode contact of the second varactor diode. 5. The semiconductor device of claim 3 further comprising: a first etch stop layer between the first anode contact layer and the first anode layer; a second etch stop layer between the first cathode contact layer and the second anode contact layer; and a third etch stop layer between the second anode contact layer and the second anode layer. 6. The semiconductor device of claim 5 wherein: the first anode contact layer forms a first mesa; the first etch stop layer, the first anode layer, the first varactor layer, and the first cathode contact layer form a second mesa over the first mesa; the second etch stop layer and the second anode contact layer form a third mesa over the second mesa; and the third etch stop layer, the second anode layer, the second varactor layer, and the second cathode contact layer form a fourth mesa over the third mesa. 7. The semiconductor device of claim 6 wherein: the anode contact of the first varactor diode is an ohmic contact on the first mesa; the cathode contact of the first varactor diode is an ohmic contact on the second mesa; the anode contact of the second varactor diode is an ohmic contact on the third mesa; and the cathode contact of the second varactor diode is an ohmic contact on the fourth mesa. 8. The semiconductor device of claim 5 wherein: the first anode contact layer, the first anode layer, the first varactor layer, the first cathode contact layer, the second anode contact layer, the second anode layer, the second varactor layer, and the second cathode contact layer comprise gallium arsenide; and the first etch stop layer, the second etch stop layer, and the third etch stop layer comprise one of aluminum gallium arsenide and indium gallium phosphide.
Assignees
Inventors
Classifications
Package configurations · CPC title
of planar diodes · CPC title
Nitride Group III-V materials, e.g. AlN or GaN · CPC title
being Group III-V materials, e.g. GaAs · CPC title
Variable-capacitance diodes, e.g. varactors · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10833071B2 cover?
- A semiconductor device includes a first varactor diode and a second varactor diode. The second varactor diode is coupled in series with the first varactor diode and vertically disposed over the first varactor diode. By vertically disposing the second varactor diode over the first varactor diode, the space occupied by the pair of varactor diodes can be significantly reduced.
- Who is the assignee on this patent?
- Qorvo Us Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D84/215. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 10 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).