Cross sectional depth composition generation utilizing scanning electron microscopy

US10830715B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10830715-B2
Application numberUS-201815880126-A
CountryUS
Kind codeB2
Filing dateJan 25, 2018
Priority dateJan 11, 2016
Publication dateNov 10, 2020
Grant dateNov 10, 2020

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Abstract

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A method for generating cross-sectional profiles using a scanning electron microscope (SEM) includes scanning a sample with an electron beam to gather an energy-dispersive X-ray spectroscopy (EDS) spectrum for an energy level to determine element composition across an area of interest. A mesh is generated to locate positions where a depth profile will be taken. EDS spectra are gathered for energy levels at mesh locations. A number of layers of the sample are determined by distinguishing differences in chemical composition between depths as beam energies are stepped through. A depth profile is generated for the area of interest by compiling the number of layers and the element composition across the mesh.

First claim

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What is claimed is: 1. A method for generating cross-sectional profiles using a scanning electron microscope (SEM), comprising: determining a number of layers by distinguishing differences in chemical composition between depths as electron beam energies are stepped through; and generating a plurality of depth profiles at a plurality of locations for the area of interest by compiling the number of layers, the depths, and the element composition for each depth profile corresponding to each location of the plurality of locations on a sample. 2. The method as recited in claim 1 , wherein determining the number of layers by distinguishing differences in chemical composition between depths as beam energies are stepped through includes stepping through at least three different beam energies. 3. The method as recited in claim 1 , wherein determining the number of layers by distinguishing differences in chemical composition between depths as beam energies are stepped through includes stepping through different beam energies by incrementing or decrementing beam energy by a set step size. 4. The method as recited in claim 1 , wherein generating the depth profile includes correlating beam energy with atomic number and/or material density to determine a depth of an interface between materials of different chemical compositions. 5. The method as recited in claim 4 , further comprising storing the plurality of depth profiles in a data structure. 6. The method as recited in claim 1 , wherein generating a depth profile of the plurality of depth profiles is performed if a substantial difference in chemical composition is determined between adjacent layers in the depth profile. 7. The method as recited in claim 1 , further comprising generating a mesh to locate positions where a depth profile will be taken. 8. The method as recited in claim 7 , further comprising gathering energy-dispersive X-ray spectroscopy (EDS) spectra for a plurality of energy levels at a plurality of mesh locations. 9. The method as recited in claim 8 , wherein the at least one energy level to determine element composition includes a higher energy level than any of the plurality of energy levels. 10. The method as recited in claim 1 , further comprising controlling a mesh size of a mesh to control a resolution of the plurality of depth profiles. 11. The method as recited in claim 1 , wherein scanning the sample with the electron beam includes gathering an energy-dispersive X-ray spectroscopy (EDS) spectrum. 12. A method for generating cross-sectional profiles using a scanning electron microscope (SEM), comprising: determining a number of layers by distinguishing differences in chemical composition between depths as electron beam energies are stepped through; controlling a mesh size of a mesh to control a resolution of the plurality of depth profiles; and generating a plurality of depth profiles for the area of interest by compiling the number of layers, the depths, and the element composition for each depth profile at each location in a plurality of locations on a sample. 13. The method as recited in claim 12 , wherein determining the number of layers by distinguishing differences in chemical composition between depths as beam energies are stepped through includes stepping through at least three different beam energies. 14. The method as recited in claim 12 , wherein determining the number of layers by distinguishing differences in chemical composition between depths as beam energies are stepped through includes stepping through different beam energies by incrementing or decrementing beam energy by a set step size. 15. The method as recited in claim 12 , wherein generating the depth profile includes correlating beam energy with atomic number or material density to determine a depth of an interface between materials of different chemical compositions. 16. The method as recited in claim 15 , further comprising storing the plurality of depth profiles in a data structure. 17. The method as recited in claim 12 , wherein scanning the sample with the electron beam includes gathering an energy-dispersive X-ray spectroscopy (EDS) spectrum. 18. The method as recited in claim 12 , further comprising gathering energy-dispersive X-ray spectroscopy (EDS) spectra for a plurality of energy levels at a plurality of mesh locations. 19. The method as recited in claim 18 , wherein the at least one energy level to determine element composition includes a higher energy level than any of the plurality of energy levels.

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What does patent US10830715B2 cover?
A method for generating cross-sectional profiles using a scanning electron microscope (SEM) includes scanning a sample with an electron beam to gather an energy-dispersive X-ray spectroscopy (EDS) spectrum for an energy level to determine element composition across an area of interest. A mesh is generated to locate positions where a depth profile will be taken. EDS spectra are gathered for ener…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification G01N23/22. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 10 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).