Quantum hardware characterized by programmable bose-hubbard hamiltonians
US-2016343932-A1 · Nov 24, 2016 · US
US10818833B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10818833-B2 |
| Application number | US-201916256826-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 24, 2019 |
| Priority date | Nov 20, 2014 |
| Publication date | Oct 27, 2020 |
| Grant date | Oct 27, 2020 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A device and method for converting magnetic flux to voltage uses a linear Fraunhofer pattern of a 1D array of long Josephson junctions. The 1D array of Josephson junctions may include from 1 to 109 junctions formed in a planar geometry with a bridge width within the range of 4-10 μm.
Opening claim text (preview).
The invention claimed is: 1. A method for converting magnetic flux to voltage comprising using a one-dimensional planar array of long Josephson junctions on a substrate, wherein the planar array is configured in a geometry selected from line, spiral, circle, meandering line, and combinations thereof, wherein each long Josephson junction has a bridge width greater than two times the Josephson penetration depth. 2. The method of claim 1 , wherein the planar geometry comprises a meandering line comprising from 10 to 10 6 meanders. 3. The method of claim 1 , wherein the array of Josephson junctions comprises from 1 to 10 9 junctions. 4. The method of claim 1 , wherein the Josephson junctions have a bridge width within a range of 4 to 100 μm. 5. The method of claim 4 , wherein the Josephson junctions have a junction width much narrower than the bridge width. 6. The method of claim 1 , wherein the Josephson junctions have a bridge width within a range of 4 to 10 μm. 7. The method of claim 1 , wherein the array is arranged in series, parallel, or series-parallel. 8. The method of claim 1 , wherein the array of Josephson junctions is formed from an YBCO superconductor. 9. The method of claim 1 , wherein the array of Josephson junctions is formed in a superconducting material selected from the group consisting of Nb, Pb, Al, MgB 2 , and cuprates. 10. The method of claim 1 , wherein the Josephson junctions comprise junction barriers selected from the group consisting of Superconductor-Insulator-Superconductor (SIS), Superconductor-Normal Metal-Superconductor (SNS), and Superconductor-diminished superconductor-Superconductor (SS′S). 11. The method of claim 1 , wherein the Josephson junctions comprise a junction selected from the group consisting of ion damage Josephson junctions, SIS trilayers, step-edge junctions, bicrystal junctions, grain boundary junctions, and ramp junctions. 12. A method for converting magnetic flux to voltage comprising using a Fraunhofer pattern of a 1D array of long Josephson junctions. 13. The method of claim 12 , wherein the ID array of long Josephson junctions is configured in a planar geometry selected from line, spiral, circle, meandering line, and combinations thereof. 14. The method of claim 12 , wherein the array comprises from 1 to 10 9 long Josephson junctions. 15. The method of claim 12 , wherein the Josephson junctions have a junction width much narrower than the bridge width. 16. The method of claim 12 , wherein the junction width is less than 10 μm and the bridge width is in a range of 50 to 100 μm. 17. The method of claim 12 , wherein the array is arranged in series, parallel, or series-parallel. 18. The method of claim 12 , wherein the array of Josephson junctions is formed in a superconducting material selected from the group consisting of Nb, Pb, Al, MgB 2 , and cuprates. 19. The method of claim 12 , wherein the Josephson junctions comprise junction barriers selected from the group consisting of Superconductor-Insulator-Superconductor (SIS), Superconductor-Normal Metal-Superconductor (SNS), and Superconductor-diminished superconductor-Superconductor (SS′S). 20. The method of claim 12 , wherein the Josephson junctions comprise a junction selected from the group consisting of ion damage Josephson junctions, SIS trilayers, step-edge junctions, bicrystal junctions, grain boundary junctions, and ramp junctions.
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00 · CPC title
comprising high-Tc ceramic materials · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.