Semiconductor sensor device and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-10818805-B2
Application number	US-201816185837-A
Country	US
Kind code	B2
Filing date	Nov 9, 2018
Priority date	Nov 14, 2017
Publication date	Oct 27, 2020
Grant date	Oct 27, 2020

Abstract

A semiconductor sensor device includes a substrate including a first main face and a second main face opposite the first main face, a semiconductor element including a sensing region, the semiconductor element on the first main face of the substrate and being electrically coupled to the substrate, a lid on the first main face of the substrate and forming a cavity, wherein the semiconductor element is in the cavity, and a vapor deposited dielectric coating covering the semiconductor element and the first main face of the substrate, the vapor deposited dielectric coating having an opening over the sensing region, wherein the second main face of the substrate is at least partially free of the vapor deposited dielectric layer.

First claim

What is claimed is:

1. A semiconductor sensor device, comprising:
a substrate comprising a first main face and a second main face opposite the first main face,
a semiconductor element comprising a sensing region, the semiconductor element being arranged on the first main face of the substrate and being electrically coupled to the substrate,
a lid arranged on the first main face of the substrate and forming a cavity, wherein the semiconductor element is arranged in the cavity, and
a vapor deposited dielectric coating covering the semiconductor element and the first main face of the substrate, the vapor deposited dielectric coating having an opening over the sensing region,
wherein the second main face of the substrate is at least partially free of the vapor deposited dielectric layer, wherein the substrate comprises electrical contacts, and wherein the semiconductor element is electrically coupled to the electrical contacts.

2. The semiconductor sensor device of claim 1 , wherein the vapor deposited dielectric coating also covers the lid.

3. The semiconductor sensor device of claim 1 , wherein the vapor deposited dielectric coating has a thickness in the range of 500 nm-70 μm.

4. The semiconductor sensor device of claim 1 , wherein the vapor deposited dielectric coating comprises parylene.

5. The semiconductor sensor device of claim 1 , further comprising:
a glob top arranged over the sensing region, wherein the glob top is at least partially exposed from the vapor deposited dielectric coating at the opening.

6. The semiconductor sensor device of claim 5 , wherein the glob top comprises filler particles, the filler particles being configured to scatter light having a wavelength in the range of one or more of 180 nm-300 nm and 5 μm-12 μm.

7. The semiconductor sensor device of claim 6 , wherein the filler particles comprise CaCO 3 .

8. The semiconductor sensor device of claim 5 , wherein the cavity is free of any dielectric padding or free of any dielectric material apart from the vapor deposited dielectric coating and the glob top.

9. The semiconductor sensor device of claim 1 , wherein the lid comprises metal or a metal alloy.

10. The semiconductor sensor device of claim 1 , wherein the lid is arranged on the first main face of the substrate such that the lid is glued onto the vapor deposited dielectric layer.

11. The semiconductor sensor device of claim 1 , wherein the lid is directly attached to the first main face of the substrate.

12. The semiconductor sensor device of claim 1 , wherein the substrate further comprises side faces connecting the first and second main faces, and wherein the side faces are free of the vapor deposited dielectric layer.

13. The semiconductor sensor device of claim 1 , further comprising:
a further semiconductor die arranged in the cavity, the further semiconductor die being covered by the vapor deposited dielectric layer.

14. The semiconductor sensor device of claim 1 , wherein the second main face of the substrate is completely free of the vapor deposited dielectric layer.

15. The semiconductor sensor device of claim 1 , wherein the second main face of the substrate is free of the vapor deposited dielectric layer only above the electrical contacts.

16. The semiconductor sensor device of claim 1 , wherein the lid comprises a bore arranged vertically above the sensing region.

17. The semiconductor sense device of claim 1 , wherein the lid comprises a bore arranged laterally displaced with respect to the sensing region.

18. The semiconductor sense device of claim 1 , wherein the lid comprises a polymer.

19. The semiconductor sense device of claim 1 , wherein the vapor deposited dielectric coating comprises a substantially uniform thickness.

20. A semiconductor sense device arrangement comprising a plurality of semiconductor sense devices according to claim 1 , wherein the substrate of a first semiconductor sense device of the plurality of semiconductor devices is coupled to the substrate of a second semiconductor sense device of the plurality of semiconductor sense devices.

Assignees

• Infineon Technologies Ag

Inventors

• Kalz Franz-Peter
• Dangelmaier Jochen

Classifications

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F77/50

  Encapsulations or containers (for photovoltaic modules H10F19/80) · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F77/30 Primary

  Coatings (arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation H10F77/80) · CPC title

• B81B7/0025 Primary

  Protection against chemical alteration · CPC title