Method for manufacturing oxide semiconductor device
US-2020052003-A1 · Feb 13, 2020 · US
US10816706B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10816706-B2 |
| Application number | US-201715742654-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 14, 2017 |
| Priority date | Sep 23, 2016 |
| Publication date | Oct 27, 2020 |
| Grant date | Oct 27, 2020 |
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The present disclosure provides a display device, belonging to a field of display technology, and can address a problem in an existing display device that short-wavelength blue light causes harm to human eyes. The display device includes a light attenuation unit, wherein the light attenuation unit comprises at least one first layer and at least one second layer which are alternately provided, the first layer having a refractive index greater than a refractive index of the second layer, and the light attenuation unit is configured to reduce a transmittance of the short-wavelength blue light among incident light.
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What is claimed is: 1. A display device, comprising a light attenuation unit, wherein the light attenuation unit comprises at least one first layer and at least one second layer which are alternately provided, the first layer having a refractive index greater than a refractive index of the second layer; the light attenuation unit has a structure as follows: ( H 2 L H 2 ) m or ( L 2 H L 2 ) m where H represents the first layer with an optical thickness, L represents the second layer with the optical thickness; where H and L represents the first layer and the second layer with a same optical thickness; H/2 represents the first layer whose optical thickness is half of the optical thickness of H, L/2 represents the second layer whose optical thickness is half of the optical thickness of L; ( H L 2 ) represents a stacked structure of (the first layer/the second layer); ( L H 2 ) represents a stacked structure of (the second layer/the first layer); and m is a number of stacked structures and is an integer greater than or equal to 1; and the optical thickness of the first or second layer is an optical path in a thickness direction of the first or second layer, and is equal to a product of the refractive index and a thickness of the first or second layer. 2. The display device according to claim 1 , wherein H and L represent the first and second layers with an optical thickness of λ/4, respectively, and H/2 and L/2 represent the first and second layers with an optical thickness of λ/8, respectively, where λ is a wavelength of the short-wavelength blue light in vacuum. 3. The display device according to claim 1 , wherein a total number of the at least one first layer and the at least one second layer is 3 to 50. 4. The display device according to claim 1 , wherein the short-wavelength blue light has a zero transmittance in the light attenuation unit. 5. The display device according to claim 1 , wherein the short-wavelength blue light has a transmittance of 10% to 99% in the light attenuation unit. 6. The display device according to claim 5 , wherein the short-wavelength blue light has a transmittance of 60% to 80% in the light attenuation unit. 7. The display device according to claim 1 , further comprising a display panel, the display panel comprising a first base plate and second base plate provided opposite to each other, wherein the light attenuation unit is positioned at one of a side of the second base plate proximal to the first base plate and a side of the second base plate distal to the first base plate. 8. The display device according to claim 7 , wherein the second base plate comprises a blue sub-pixel, and the light attenuation unit is provided at a position corresponding to the blue sub-pixel. 9. The display device according to claim 1 , further comprising a display panel, the display panel comprising a first base plate and second base plate provided opposite to each other, wherein the light attenuation unit is positioned at one of a side of the first base plate proximal to the second base plate and a side of the first base plate distal to the second base plate. 10. The display device according to claim 9 , wherein the second base plate comprises a second substrate and a blue sub-pixel at a side of the second substrate proximal to the first base plate, and the light attenuation unit is provided at a position corresponding to the blue sub-pixel. 11. The display device according to claim 1 , further comprising a display panel, the display panel comprising a first base plate and second base plate provided opposite to each other, wherein the second base plate comprises a second substrate and a blue sub-pixel at a side of the second substrate proximal to the first base plate, the first base plate comprises a first substrate, a thin film transistor on the first substrate, and a pixel electrode connected to the thin film transistor, and the light attenuation unit is positioned between the first substrate and the pixel electrode. 12. The display device according to claim 11 , wherein the pixel electrode is provided at a position corresponding to the blue sub-pixel, and the light attenuation unit is provided at a position corresponding to the pixel electrode. 13. The display device according to claim 12 , wherein the light attenuation unit is further provided at a position corresponding to the thin film transistor. 14. The display device according to claim 12 , wherein the first base plate further comprises one of a gate insulating layer and a passivation layer, and the light attenuation unit and the one of the gate insulating layer and the passivation layer are integrated into one layer. 15. The display device according to claim 11 , wherein the light attenuation unit is used as one of a gate insulating layer and a passivation layer. 16. The display device according to claim 1 , further comprising a display panel, the display panel comprising a first base plate and second base plate provided opposite to each other, wherein the second base plate comprises a second substrate and a blue sub-pixel at a side of the second substrate proximal to the first base plate, the first base plate comprises a first substrate, a thin film transistor on the first substrate, and a pixel electrode connected to the thin film transistor, and the light attenuation unit is positioned on the pixel electrode, and the pixel electrode is provided at a position corresponding to the blue sub-pixel.
wavelength filtering · CPC title
Waveplates, i.e. plates with a retardation value of lambda/n · CPC title
Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element · CPC title
UV absorbing · CPC title
pixel · CPC title
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