Chemical vapor deposition raw material including dinuclear ruthenium complex and chemical deposition method using chemical vapor deposition raw material

Patent metadata

Field	Value
Publication number	US-10815260-B2
Application number	US-201615744751-A
Country	US
Kind code	B2
Filing date	Aug 23, 2016
Priority date	Aug 25, 2015
Publication date	Oct 27, 2020
Grant date	Oct 27, 2020

Abstract

The present invention relates to a chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the chemical vapor deposition raw material including a dinuclear ruthenium complex in which carbonyl and a nitrogen-containing organic ligand (L) are coordinated to metallically bonded two rutheniums, the dinuclear ruthenium complex being represented by the following formula ( 1 ): A raw material according to the present invention is capable of producing a high-purity ruthenium thin film, and has a low melting point and moderate thermal stability. Thus, the raw material according to the present invention is suitable for use in electrodes of various kinds of devices.

First claim

The invention claimed is:

1. A chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, comprising a dinuclear ruthenium complex in which carbonyl and a nitrogen-containing organic ligand (L) are coordinated to metallically bonded two rutheniums, the dinuclear ruthenium complex being represented by the following formula (1):

wherein L represents an organic ligand containing one nitrogen atom, the ligand being represented by the following formula (L-1) or (L-2):

wherein * represents a position of an atom bridge-coordinated to ruthenium; and R 1 and R 4 are either an ethyl group or an iso-propyl group, and R 2 , R 3 , and R 5 to R 8 may be the same or different, and each represent any one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 4 or less.

2. The chemical vapor deposition raw material according to claim 1 , wherein the total number of carbon atoms in substituents R 1 to R 3 is 3 or more and 10 or less.

3. The chemical vapor deposition raw material according to claim 2 , wherein is an ethyl group, a propyl group or a butyl group.

4. The chemical vapor deposition raw material according to claim 2 , wherein R 2 represents a hydrogen atom or a methyl group.

5. The chemical vapor deposition raw material according to claim 2 , wherein R 5 , R 6 , R 7 and R 8 may be the same or different, and each represent a hydrogen atom or a methyl group.

6. The chemical vapor deposition raw material according to claim 2 , wherein represents a branched alkyl group.

7. The chemical vapor deposition raw material according to claim 1 , wherein the total number of carbon atoms in substituents R 4 to R 8 is 2 or more and 10 or less.

8. The chemical vapor deposition raw material according to claim 7 , wherein is an ethyl group, a propyl group or a butyl group.

9. The chemical vapor deposition raw material according to claim 7 , wherein R 2 represents a hydrogen atom or a methyl group.

10. The chemical vapor deposition raw material according to claim 7 , wherein R 5 , R 6 , R 7 and R 8 may be the same or different, and each represent a hydrogen atom or a methyl group.

11. The chemical vapor deposition raw material according to claim 7 , wherein represents a branched alkyl group.

12. The chemical vapor deposition raw material according to claim 1 , wherein is an ethyl group, a propyl group or a butyl group.

13. The chemical vapor deposition raw material according to claim 1 , wherein R 2 represents a hydrogen atom or a methyl group.

14. The chemical vapor deposition raw material according to claim 1 , wherein R 5 , R 6 , R 7 and R 8 may be the same or different, and each represent a hydrogen atom or a methyl group.

15. The chemical vapor deposition raw material according to claim 1 , wherein represents a branched alkyl group.

16. A method for chemical deposition of a ruthenium thin film or a ruthenium compound thin film, comprising preparing a raw material gas by vaporizing a raw material including a dinuclear ruthenium complex, and heating the raw material gas while introducing the raw material gas to a substrate surface,
the method using the chemical vapor deposition raw material defined in claim 1 as the raw material.

17. A method for chemical deposition of a ruthenium thin film or a ruthenium compound thin film, comprising preparing a raw material gas by vaporizing a raw material including a dinuclear ruthenium complex, and heating the raw material gas while introducing the raw material gas to a substrate surface,
the method using the chemical vapor deposition raw material defined in claim 2 as the raw material.

Assignees

• Tanaka Precious Metal Ind

Inventors

• Harada Ryosuke
• SHIGETOMI Toshiyuki
• Ishizaka Tasuku
• Aoyama Tatsutaka

Classifications

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• C23C16/16 Primary

  from metal carbonyl compounds · CPC title

• C07F15/0046

  Ruthenium compounds · CPC title