Cu column, Cu core column, solder joint, and through-silicon via

US10811376B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10811376-B2
Application numberUS-201415509333-A
CountryUS
Kind codeB2
Filing dateSep 9, 2014
Priority dateSep 9, 2014
Publication dateOct 20, 2020
Grant dateOct 20, 2020

How to read this patent

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided are a Cu column, a Cu core column, a solder joint, and a through-silicon via, which have the low Vickers hardness and the small arithmetic mean roughness. For the Cu column 1 according to the present invention, its purity is equal to or higher than 99.9% and equal to or lower than 99.995%, its arithmetic mean roughness is equal to or less than 0.3 μm, and its Vickers hardness is equal to or higher than 20 HV and equal to or less than 60 HV. Since the Cu column 1 is not melted at a melting temperature in the soldering and a definite stand-off height (a space between the substrates) can be maintained, it is preferably applied to the three dimensional mounting or the pitch narrowing mounting.

First claim

Opening claim text (preview).

The invention claimed is: 1. A Cu column containing: a top surface, a bottom surface, and a cylindrical peripheral surface extending between the top surface and the bottom surface, purity which is equal to or higher than 99.9% and equal to or lower than 99.995%, arithmetic mean roughness which is equal to or less than 0.3 μm, and Vickers hardness which is equal to or higher than 20 HV and equal to or less than 60 HV, wherein a diameter of the top surface is 1-300 μm, a diameter of the bottom surface is 1-300 μm, and a height of the cylindrical peripheral surface is 1-3000 μm, and wherein the arithmetic mean roughness is equal to or less than 0.3 μm across the cylindrical peripheral surface of said Cu column. 2. The Cu column according to claim 1 , wherein an alpha dose is equal to or less than 0.0200 cph/cm 2 . 3. The Cu column according to claim 1 , wherein the Cu column is coated with a flux layer. 4. The Cu column according to claim 1 , wherein the Cu column is coated with an organic film containing an imidazole compound. 5. A Cu core column, containing: the Cu column according to claim 1 ; and a solder layer which coats the Cu column. 6. A Cu core column containing: the Cu column according to claim 1 ; and a plating layer which includes at least one element selected from a group of Ni, Fe and Co, the plating layer coating the Cu column. 7. The Cu core column according to claim 6 , further comprising: a solder layer which coats the plating layer. 8. The Cu core column according to claim 5 , wherein an alpha dose is equal to or less than 0.0200 cph/cm 2 . 9. The Cu core column according to claim 5 , wherein the Cu core column is coated with a flux layer. 10. A solder joint using the Cu column according to claim 1 . 11. A through-silicon via using the Cu column according to claim 1 . 12. A solder joint using the Cu core column according to claim 5 . 13. A through-silicon via using the Cu core column according to claim 5 . 14. The Cu column according to claim 2 , wherein the Cu column is coated with a flux layer. 15. The Cu column according to claim 2 , wherein the Cu column is coated with an organic film containing an imidazole compound. 16. A Cu core column, containing: the Cu column according to claim 2 ; and a solder layer which coats the Cu column. 17. The Cu column according to claim 1 , wherein said diameter of the top surface is 1-200 μm and said diameter of the bottom surface of 1-200 μm. 18. The Cu column according to claim 1 , wherein said diameter of the top surface is 1-100 μm, said diameter of the bottom surface is 1-100 μm, and said height is 1-100 μm. 19. The Cu column according to claim 1 , wherein the arithmetic mean roughness is equal to or less than 0.2 μm across the entire outermost surface of said Cu column.

Assignees

Inventors

Classifications

  • characterised by the filling method or the material of the conductive fill · CPC title

  • Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties · CPC title

  • Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

  • forming coatings · CPC title

  • of outermost layers of multilayered bumps, e.g. material of a coating · CPC title

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Frequently asked questions

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What does patent US10811376B2 cover?
Provided are a Cu column, a Cu core column, a solder joint, and a through-silicon via, which have the low Vickers hardness and the small arithmetic mean roughness. For the Cu column 1 according to the present invention, its purity is equal to or higher than 99.9% and equal to or lower than 99.995%, its arithmetic mean roughness is equal to or less than 0.3 μm, and its Vickers hardness is equal …
Who is the assignee on this patent?
Senju Metal Industry Co
What technology area does this patent fall under?
Primary CPC classification C25D5/10. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 20 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).