Chemical-mechanical polishing composition comprising organic/inorganic composite particles
US-2017226381-A1 · Aug 10, 2017 · US
Polishing slurries for polishing semiconductor wafers
US10811307B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10811307-B2 |
| Application number | US-201816150000-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 2, 2018 |
| Priority date | Aug 20, 2015 |
| Publication date | Oct 20, 2020 |
| Grant date | Oct 20, 2020 |
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- Title
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Abstract
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Polishing slurries for polishing semiconductor substrates are disclosed. The polishing slurry may include first and second sets of colloidal silica particles with the second set having a silica content greater than the first set.
First claim
Opening claim text (preview).
What is claimed is: 1. A polishing slurry for polishing a semiconductor wafer, the polishing slurry comprising: a first set of silica particles, the first set of silica particles being polymer-encapsulated and having a silica content of X 1 wt %; a second set of silica particles, the second set of silica particles being polymer-encapsulated and having a silica content of X 2 wt %, wherein X 2 is greater than X 1 . 2. The polishing slurry as set forth in claim 1 wherein the polymer of the first set of silica particles and the polymer of the second set of particles is each selected from the groups consisting of cellulose, substituted-cellulose, modified starches and xanthan gum. 3. The polishing slurry as set forth in claim 1 wherein the ratio of X 2 to about X 1 is at least about 2:1. 4. The polishing slurry as set forth in claim 1 wherein the ratio of X 2 to about X 1 is at least about 3:1. 5. The polishing slurry as set forth in claim 1 wherein the ratio of X 2 to about X 1 is at least about 5:1. 6. The polishing slurry as set forth in claim 1 wherein the ratio of X 2 to about X 1 is at least about 10:1. 7. The polishing slurry as set forth in claim 1 wherein the ratio of X 2 to about X 1 is at least about 15:1. 8. The polishing slurry as set forth in claim 1 wherein the first set of silica particles contains less than about 15 wt % silica and the second set contains at least about 50 wt % silica. 9. The polishing slurry as set forth in claim 1 wherein the first set of silica particles and the second subset of silica particles each have an average diameter of less than about 100 nm and the difference between the average diameter of the first set of particles and the average diameter of the second set of particles is less than about 30 nm. 10. The polishing slurry as set forth in claim 1 wherein the first set of silica particles and the second subset of silica particles each have an average diameter of less than about 100 nm and the difference between the average diameter of the first set of particles and the average diameter of the second set of particles is less than about 20 nm. 11. The polishing slurry as set forth in claim 1 wherein the weight ratio of the first set of silica particles to the second set of silica particles is from about 5:1 to about 1:5. 12. The polishing slurry as set forth in claim 1 wherein the weight ratio of the first set of silica particles to the second set of silica particles is from about 3:1 to about 1:3. 13. The polishing slurry as set forth in claim 1 wherein the polishing slurry is a colloid. 14. The polishing slurry as set forth in claim 1 wherein a difference between X 2 and about X 1 is at least about 5%. 15. The polishing slurry as set forth in claim 1 wherein a difference between X 2 and about X 1 is at least about 25%. 16. The polishing slurry as set forth in claim 1 wherein a difference between X 2 and about X 1 is at least about 50%. 17. The polishing slurry as set forth in claim 1 wherein the first set of silica particles contains less than about 10 wt % silica and the second set contains at least about 70 wt % silica. 18. The polishing slurry as set forth in claim 1 wherein the polishing slurry comprises an aqueous solution.
Assignees
Inventors
Classifications
by polishing · CPC title
of semiconductor materials · CPC title
Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title
- H10P90/1916Primary
with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title
Aqueous liquid suspensions · CPC title
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Frequently asked questions
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- What does patent US10811307B2 cover?
- Polishing slurries for polishing semiconductor substrates are disclosed. The polishing slurry may include first and second sets of colloidal silica particles with the second set having a silica content greater than the first set.
- Who is the assignee on this patent?
- Global Wafers Co Ltd, Globalwafers Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P90/1916. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 20 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).