Method of cleaning and drying semiconductor substrate

Patent metadata

Field	Value
Publication number	US-10811247-B2
Application number	US-201815937986-A
Country	US
Kind code	B2
Filing date	Mar 28, 2018
Priority date	Apr 27, 2017
Publication date	Oct 20, 2020
Grant date	Oct 20, 2020

Abstract

A cleaning and drying method of a semiconductor substrate capable of suppressing collapse or breakdown of a pattern which occur at the time of drying a cleaning solution after cleaning the substrate and decomposition of a resin at a bottom of the pattern, and capable of removing the cleaning solution with good efficiency without using a specific device.

First claim

The invention claimed is:

1. A method of cleaning and drying a semiconductor substrate onto which a pattern has been formed, which comprises:
(I) cleaning the semiconductor substrate onto which a pattern has been formed with a cleaning solution,
(II) replacing the cleaning solution that remained on the semiconductor substrate with a composition comprising a resin (A) that comprises a repeating unit having an acetal structure represented by the following general formula (1) and a solvent, and removing the solvent in the replaced composition by heating at a temperature lower than a decomposition temperature of the resin (A), and
(III) blowing a gas having a temperature equal to or higher than the decomposition temperature of the resin (A) to the resin (A) on the semiconductor substrate while maintaining a temperature of the semiconductor substrate onto which a pattern has been formed to 0° C. or higher and lower than the decomposition temperature of the resin (A), to decompose and remove the resin (A) from a side of a surface contacting with the gas,

wherein R 1 represents a hydrogen atom or a saturated or unsaturated monovalent organic group having 1 to 30 carbon atoms which may be substituted; and W represents a saturated or unsaturated divalent organic group having 2 to 30 carbon atoms,
wherein the gas that is blown to the resin (A) is water vapor or water vapor that comprises a gas that acidifies an aqueous solution,
wherein a pressure of the water vapor is made equal to, or lower than, a saturated vapor pressure of the water vapor at the temperature of the gas in (III).

2. The method of cleaning and drying a semiconductor substrate according to claim 1 , wherein the resin (A) is a compound represented by any of the following general formulae (1a) to (1c),

wherein R 1a represents an alkyl group having 1 to 4 carbon atoms or an alkenyl group having 2 to 4 carbon atoms; W a represents a saturated or unsaturated divalent hydrocarbon group having 4 to 10 carbon atoms, which may have an ether bond(s); each of R b1 independently represents —W a —OH or a saturated or unsaturated monovalent organic group having 1 to 30 carbon atoms which may be substituted; R 1c represents a hydrogen atom, or an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 4 to 20 carbon atoms each of which may be substituted; each of R c1 independently represents an alkyl group having 1 to 4 carbon atoms or —W a —OH; and a repeating unit “n” represents an average number of repeating units and is 3 to 2,000.

3. The method of cleaning and drying a semiconductor substrate according to claim 1 , wherein an aspect ratio of the pattern is 20:1 or more.

4. The method of cleaning and drying a semiconductor substrate according to claim 1 , wherein the cleaning solution is a liquid comprising at least one of water, a water-soluble alcohol and a fluorine compound.

5. The method of cleaning and drying a semiconductor substrate according to claim 1 , wherein a temperature of the semiconductor substrate onto which a pattern has been formed is maintained at 0° C. or higher and 100° C. or lower in (III).

6. The method of cleaning and drying a semiconductor substrate according to claim 1 , wherein the gas that acidifies an aqueous solution is a gas having a vapor pressure at 20° C. of 1,013 hPa or higher.

7. The method of cleaning and drying a semiconductor substrate according to claim 2 , wherein an aspect ratio of the pattern is 20:1 or more.

8. The method of cleaning and drying a semiconductor substrate according to claim 2 , wherein the cleaning solution is a liquid comprising at least one of water, a water-soluble alcohol and a fluorine compound.

9. The method of cleaning and drying a semiconductor substrate according to claim 2 , wherein a temperature of the semiconductor substrate onto which a pattern has been formed is maintained at 0° C. or higher and 100° C. or lower in (III).

10. The method of cleaning and drying a semiconductor substrate according to claim 3 , wherein the cleaning solution is a liquid comprising at least one of water, a water-soluble alcohol and a fluorine compound.

11. The method of cleaning and drying a semiconductor substrate according to claim 3 , wherein a temperature of the semiconductor substrate onto which a pattern has been formed is maintained at 0° C. or higher and 100° C. or lower in (III).

12. The method of cleaning and drying a semiconductor substrate according to claim 4 , wherein a temperature of the semiconductor substrate onto which a pattern has been formed is maintained at 0° C. or higher and 100° C. or lower in (III).

13. The method of cleaning and drying a semiconductor substrate according to claim 7 , wherein the cleaning solution is a liquid comprising at least one of water, a water-soluble alcohol and a fluorine compound.

14. The method of cleaning and drying a semiconductor substrate according to claim 7 , wherein a temperature of the semiconductor substrate onto which a pattern has been formed is maintained at 0° C. or higher and 100° C. or lower in (III).

15. The method of cleaning and drying a semiconductor substrate according to claim 8 , wherein a temperature of the semiconductor substrate onto which a pattern has been formed is maintained at 0° C. or higher and 100° C. or lower in (III).

16. The method of cleaning and drying a semiconductor substrate according to claim 10 , wherein a temperature of the semiconductor substrate onto which a pattern has been formed is maintained at 0° C. or higher and 100° C. or lower in (III).

17. The method of cleaning and drying a semiconductor substrate according to claim 13 , wherein a temperature of the semiconductor substrate onto which a pattern has been formed is maintained at 0° C. or higher and 100° C. or lower in (III).

Assignees

• Shinetsu Chemical Co

Inventors

• Ogihara Tsutomu
• Watanabe Osamu
• Nagata Takeshi
• Kobayashi Naoki
• Kori Daisuke

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P70/273 Primary

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P72/0408

  for drying · CPC title

• H10P72/0404

  for general liquid treatment, e.g. etching followed by cleaning · CPC title

• H10P70/50

  characterised by the part to be cleaned · CPC title