Magnetic memory device with nonmagnetic layer between two magnetic layers

Patent metadata

Field	Value
Publication number	US-10811067-B2
Application number	US-201816119003-A
Country	US
Kind code	B2
Filing date	Aug 31, 2018
Priority date	Mar 15, 2018
Publication date	Oct 20, 2020
Grant date	Oct 20, 2020

Abstract

According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.

First claim

What is claimed is:

1. A magnetic memory device, comprising:
a conductive layer including a first region, a second region, and a third region between the first region and the second region;
a first magnetic layer;
a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, the second direction being from the first region toward the second region; and
a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,
the second region including first to third conductive portions,
a direction from the first conductive portion toward the second conductive portion being aligned with a third direction, the third direction crossing a plane including the first direction and the second direction,
the third conductive portion being between the first conductive portion and the second conductive portion in the third direction,
a thickness along the first direction of the first conductive portion being thicker than a thickness along the first direction of the third conductive portion,
wherein
at least a portion of the conductive layer includes a first layer and a second layer,
a portion of the second layer is between the first layer and the second magnetic layer,
another portion of the second layer is included in the first conductive portion, and
the second layer includes a second metallic element different from a first metallic element, the first metallic element being included in the first layer.

2. The device according to claim 1 , wherein a thickness along the first direction of the second conductive portion is thicker than the thickness along the first direction of the third conductive portion.

3. The device according to claim 1 , wherein
at least a portion of the third conductive portion does not include the second layer, or
a thickness along the first direction of the second layer included in the at least a portion of the third conductive portion is thinner than a thickness along the first direction of the second layer included in the first conductive portion.

4. The device according to claim 1 , A magnetic memory device, comprising:
a conductive layer including a first region, a second region, and a third region between the first region and the second region;
a first magnetic layer;
a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, the second direction being from the first region toward the second region; and
a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,
the second region including first to third conductive portions,
a direction from the first conductive portion toward the second conductive portion being aligned with a third direction, the third direction crossing a plane including the first direction and the second direction,
the third conductive portion being between the first conductive portion and the second conductive portion in the third direction,
a thickness along the first direction of the first conductive portion being thicker than a thickness along the first direction of the third conductive portion,
wherein
the second magnetic layer includes a first end portion and a second end portion,
a direction from the first end portion toward the second end portion is aligned with the third direction, and
a position in the third direction of at least a portion of the first conductive portion is between a position in the third direction of the first end portion and a position in the third direction of the second end portion.

5. The device according to claim 1 , wherein
the second magnetic layer includes first to third magnetic portions,
a direction from the first magnetic portion toward the second magnetic portion is aligned with the third direction,
the third magnetic portion is between the first magnetic portion and the second magnetic portion in the third direction, and
a length along the second direction of the first magnetic portion is longer than a length along the second direction of the third magnetic portion.

6. The device according to claim 1 , wherein the thickness along the first direction of the first conductive portion is not less than 1.02 times and not more than 1.5 times the thickness along the first direction of the third conductive portion.

7. The device according to claim 1 , wherein
the second region further includes a fourth conductive portion and a fifth conductive portion,
the first conductive portion is between the fourth conductive portion and the fifth conductive portion in the third direction,
the third conductive portion is between the first conductive portion and the fifth conductive portion in the third direction,
the second conductive portion is between the third conductive portion and the fifth conductive portion in the third direction, and
a thickness along the first direction of at least a portion of the fourth conductive portion is thinner than the thickness along the first direction of the first conductive portion.

8. A magnetic memory device, comprising:
a conductive layer including a first region, a second region, and a third region between the first region and the second region;
a first magnetic layer;
a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, the second direction being from the first region toward the second region; and
a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,
the second magnetic layer including first to third magnetic portions,
a direction from the first magnetic portion toward the second magnetic portion being aligned with a third direction, the third direction crossing a plane including the first direction and the second direction,
the third magnetic portion being between the first magnetic portion and the second magnetic portion in the third direction,
a length along the second direction of the first magnetic portion being longer than not less than 1.05 times and not more than 1.5 times a length along the second direction of the third magnetic portion.

9. The device according to claim 8 , wherein a length along the second direction of the second magnetic portion is longer than the length along the second direction of the third magnetic portion.

10. The device according to claim 1 , wherein
the first metallic element includes at least one selected from the group consisting of tantalum and tungsten, and
the second metallic element includes hafnium.

11. The device according to claim 1 , wherein
at least one of
a distance along the second direction between the first conductive portion and the third region,
a distance along the second direction between the second conductive portion and the third region, or
a distance along the second direction between the third conductive portion and the third region

is not more than ½ of a length along the second direction of the second magnetic layer.

12. The device according to claim 1 , wherein at least one of the first to third conductive portions contacts the third region.

13. The device according to claim 1 , further comprising
a third magnetic layer;
a fourth magnetic layer;
a second nonmagnetic layer; and
a controller,
the conductive layer further including a fourth region and a fifth region, the second region being provided between the first region and the fourth region in the second direction, the fifth region being provided between the second region and the fourth region in the second direction

Assignees

• Toshiba Kk

Inventors

• BUYANDALAI Altansargai
• Shirotori Satoshi
• Ohsawa Yuichi
• Sugiyama Hideyuki
• Shimizu Mariko
• Yoda Hiroaki
• Koui Katsuhiko

Classifications

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C11/1659

  Cell access · CPC title

• H01L27/228

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic