Multimodal microstructure material and methods of forming same

US10801100B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10801100-B2
Application numberUS-201916568064-A
CountryUS
Kind codeB2
Filing dateSep 11, 2019
Priority dateSep 11, 2018
Publication dateOct 13, 2020
Grant dateOct 13, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

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Metallic materials with multimodal microstructure and methods of forming the metallic materials are disclosed. Exemplary methods allow for tuning of desired properties of the metallic materials and of devices including the metallic materials.

First claim

Opening claim text (preview).

We claim: 1. A method of forming a metallic material with multimodal microstructure, the method comprising the steps of: providing a substrate having a patterned surface comprising a first material and a second material; and depositing a metallic material directly over the first material and the second material to form a multimodal metallic material, wherein a microstructure of the first material and a microstructure of the second material are different, and wherein a microstructure of the metallic material deposited directly over the first material and a microstructure of the metallic material deposited directly over the second material are different. 2. The method of claim 1 , wherein the first material is crystalline. 3. The method of claim 2 , wherein the microstructure of the metallic material deposited directly over the first material is crystalline. 4. The method of claim 2 , wherein the metallic material deposited directly over the first material is epitaxially grown. 5. The method of claim 1 , wherein the second material is not monocrystalline. 6. The method of claim 5 , wherein the microstructure of the metallic material deposited directly over the second material is one or more of nanocrystalline structures and ultra-fine grained structures. 7. The method of claim 6 , wherein an average cross-sectional dimension of the nanocrystalline structures ranges from about 5 nm to about 100 nm and an average cross-sectional dimension of the ultra-fine grain structures ranges from about 100 nm to about 1000 nm. 8. The method of claim 1 , wherein the metallic material comprises elemental metal. 9. The method of claim 8 , wherein the elemental metal is selected from the group consisting of aluminum, copper, iron, nickel, silver, chromium, vanadium, titanium, and cobalt. 10. The method of claim 1 , wherein the metallic material comprises an alloy. 11. The method of claim 10 , wherein the alloy is selected from the group consisting of dilute alloys of aluminum, copper, iron, silver, nickel, titanium, and chromium. 12. The method of claim 1 , wherein the first material comprises a material selected from the group consisting of buffer material, silicon, germanium, silicon germanium, quartz, zinc oxide, and rock salt (NaCl). 13. The method of claim 1 , wherein the second material comprises a material selected from the group consisting of silicon nitride, silicon oxynitride, aluminum, titanium nitride, and aluminum oxide. 14. The method of claim 1 , wherein a ratio of a surface area of the first material to a surface area of the second material ranges from about 1:0.02 to about 1:50, about 1:0.75 to about 1:1.25, or about 1:0.8 to about 1:1.2. 15. The method of claim 1 , wherein the patterned surface comprises a plurality of islands of the first material, the plurality of islands having an average cross-sectional dimensions of about 500 nm to about 50000 nm. 16. The method of claim 1 , wherein the patterned surface comprises a plurality of islands of the second material, the plurality of islands having an average cross-sectional dimensions of about 500 nm to about 50000 nm. 17. The method of claim 1 , wherein the patterned surface comprises co-continuous or bi continuous or random patterns of the first material and the second material, with cross-sectional dimensions of about 500 nm to about 50000 nm. 18. The method of claim 1 , wherein the step of depositing comprises physical vapor deposition. 19. The method of claim 1 , wherein a surface of the first material and a surface of the second material are coplanar.

Assignees

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Classifications

  • including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides · CPC title

  • only coatings of metal elements only · CPC title

  • on hard metal substrates · CPC title

  • C23C14/025Primary

    Metallic sublayers · CPC title

  • on other inorganic substrates · CPC title

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What does patent US10801100B2 cover?
Metallic materials with multimodal microstructure and methods of forming the metallic materials are disclosed. Exemplary methods allow for tuning of desired properties of the metallic materials and of devices including the metallic materials.
Who is the assignee on this patent?
Rajagopalan Jagannathan, Berlia Rohit, Univ Arizona State
What technology area does this patent fall under?
Primary CPC classification C23C14/025. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 13 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).