Enhanced electron amplifier structure and method of fabricating the enhanced electron amplifier structure
US-2019066961-A1 · Feb 28, 2019 · US
US10796874B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10796874-B2 |
| Application number | US-201916448313-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 21, 2019 |
| Priority date | Sep 28, 2017 |
| Publication date | Oct 6, 2020 |
| Grant date | Oct 6, 2020 |
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The invention provides a gain device having a plurality of channels having a polygonal shape with four or more sides. The invention also provides a method for producing microchannel plates (MCPs) having the steps of providing a pre-polymer; and directing a laser over the pre-polymer into a pre-determined pattern. Also provided is method for efficiently 3D printing an object.
Opening claim text (preview).
The invention claimed is: 1. A gain device comprising a plurality of channels having a polygonal shape with four or more sides, wherein the device has an open area ratio of at least 80 percent. 2. The gain device of claim 1 wherein the channels having a polygonal shape are hexagonal channels. 3. The gain device of claim 1 wherein the channels having a polygonal shape extend transversely through the device so as to define a first channel end and a second channel end. 4. The gain device of claim 1 wherein the device is at least 1.2 mm thick, and wherein the device has a diameter that is at least one cm. 5. The gain device of claim 3 wherein the first and second channel ends are coated with a conductive layer. 6. The gain device of claim 5 wherein the conductive layer is a conductive material selected from the group consisting of gold, platinum, palladium, nichrome, copper, and combinations thereof. 7. The gain device of claim 5 wherein the channels having a polygonal shape have interior surfaces, and wherein the interior surfaces are coated with a first resistive coating and a secondary electron emissive coating. 8. The gain device of claim 7 wherein the resistive coating comprises a combination of Al 2 O 3 and tungsten, and wherein the secondary electron emissive coating is made from a material selected from the group consisting of Al 2 O 3 , MgO, and combinations thereof. 9. The gain device of claim 7 wherein the first coating is between 10 and 1000 nm thick and the second coating is between 1-100 nm thick. 10. The gain device of claim 4 wherein the device provides 10 4 gain. 11. The gain device of claim 1 wherein the channels are defined by opposing walls, wherein the walls are approximately 100 nm thick. 12. A gain device comprising a plurality of channels having a hexagonal shape. 13. The gain device of claim 1 wherein the channels extend transversely through the device so as to define a first channel end and a second channel end. 14. The gain device of claim 1 wherein the device is at least 1.2 mm thick, and wherein the device has a diameter that is at least one cm. 15. The gain device of claim 13 wherein the first and second channel ends are coated with a conductive layer. 16. The gain device of claim 15 wherein the conductive layer is a conductive material selected from the group consisting of gold, platinum, palladium, nichrome, copper, and combinations thereof. 17. The gain device of claim 16 wherein the channels have interior surfaces, and wherein the interior surfaces are coated with a first resistive coating and a secondary electron emissive coating. 18. The gain device of claim 17 wherein the resistive coating comprises a combination of Al 2 O 3 and tungsten, and wherein the secondary electron emissive coating is made from a material selected from the group consisting of Al 2 O 3 , MgO, and combinations thereof. 19. The gain device of claim 17 wherein the first coating is between 10 and 1000 nm thick and the second coating is between 1-100 nm thick.
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