Micro-channel plate detector

Patent metadata

Field	Value
Publication number	US-9139905-B2
Application number	US-201113032395-A
Country	US
Kind code	B2
Filing date	Feb 22, 2011
Priority date	Feb 24, 2010
Publication date	Sep 22, 2015
Grant date	Sep 22, 2015

Abstract

A method and system for providing a micro-channel plate detector. An anodized aluminum oxide membrane is provided and includes a plurality of nanopores which have an Al coating and a thin layer of an emissive oxide material responsive to incident radiation, thereby providing a plurality of radiation sensitive channels for the micro-channel plate detector.

First claim

What is claimed is:

1. A micro-channel plate detector, comprising:
an anodized aluminum oxide membrane having a plurality of fabricated nanopores with an exterior surface therethrough having a pattern applied along the exterior surface; and
a thin film disposed within at least a portion of the plurality of nanopores and the nanopores being open and unplugged, the thin film being conductive and emissive and responsive to incident radiation, the thin film comprising a conducting material and an insulating material and an emissive material, thereby providing a plurality of radiation sensitive channels formed from the nanopores for the micro-channel plate detector.

2. The micro-channel plate detector, as defined in claim 1 , wherein the thin film comprises an atomic layer deposited material.

3. The micro-channel plate detector, as defined in claim 1 , wherein the nanopores have a diameter of about 10 nm to 500 nm.

4. The micro-channel plate detector, as defined in claim 3 , wherein the plurality of nanopores have a substantially uniform diameter.

5. The micro-channel plate detector, as defined in claim 1 , wherein the radiation sensitive channels have a diameter of about 1-25 micrometers.

6. The micro-channel plate detector, as defined in claim 1 , wherein the pattern comprises a textured coating comprising a faceted layer.

7. The micro-channel plate detector, as defined in claim 6 , wherein the faceted layer includes a bias angle.

8. The micro-channel plate detector, as defined in claim 1 , wherein an Al anodized aluminum oxide interface is selected from the group consisting of a sharp interface and a graded interface.

9. The micro-channel plate detector, as defined in claim 1 , further including additional patterned layers on the anodized aluminum oxide membrane for the radiation sensitive channels.

10. The micro-channel plate detector, as defined in claim 1 , wherein each of the plurality of nanopores comprises a funnel-shaped channel entrance.

11. The micro-channel plate detector, as defined in claim 1 , wherein the conducting material is selected from the group consisting of zinc oxide, tin oxide and indium oxide, and the insulating material is selected from the group consisting of aluminum oxide and magnesium oxide, thereby enabling tuning of electrical resistance of the thin film.

12. The micro-channel plate detector, as defined in claim 2 , wherein the anodized aluminum oxide includes intrinsic pores sealed by the atomic layer deposited material.

13. The microchannel plate detector of claim 1 , wherein the thin film is disposed as a stripe within each of the plurality of nanopores.

14. The microchannel plate detector of claim 13 , wherein a plurality of stripes of the thin film are disposed within each of the plurality of nanopores.

15. The microchannel plate detector of claim 13 , wherein a stripe of photocathode material is deposited at the entrance of the nanopores.

16. The microchannel plate detector of claim 15 , wherein a metallic anode material is deposited opposite the photocathode material.

17. The microchannel plate detector of claim 1 , wherein the thin film comprises a mixture of the conducting material and the insulating material.

Assignees

• Elam Jeffrey W
• Lee Seon W
• Wang Hsien-Hau
• Pellin Michael J
• Byrum Karen
• Frisch Henry J
• Uchicago Argonne Llc

Inventors

• Elam Jeffrey W
• Lee Seon W
• Wang Hsien-Hau
• Pellin Michael J
• Byrum Karen
• Frisch Henry J

Classifications

• C23C16/407

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

• C23C16/45527 Primary

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title