Pressure sensing device with cavity and related methods

Patent metadata

Field	Value
Publication number	US-10794783-B2
Application number	US-201815914832-A
Country	US
Kind code	B2
Filing date	Mar 7, 2018
Priority date	Feb 19, 2015
Publication date	Oct 6, 2020
Grant date	Oct 6, 2020

Abstract

A pressure sensing device may include a body configured to distribute a load applied between first and second parts positioned one against the other, and a pressure sensor carried by the body. The pressure sensor may include a support body, and an IC die mounted with the support body and defining a cavity. The IC die may include pressure sensing circuitry responsive to bending associated with the cavity, and an IC interface coupled to the pressure sensing circuitry.

First claim

What is claimed is:

1. A pressure sensing system, comprising:
a first main body that is disposed between a first member and a second member that is positioned against the first member in a structure, and that experiences a load applied between the first member and the second member; and
a first pressure sensor carried in an interior of the first main body;
wherein the first pressure sensor comprises:
a support body;
a semiconductor die;
a bonding layer physically attaching the semiconductor die to the support body, the bonding layer being made of a material different from the support body, the semiconductor die comprising an unsupported middle and two supported sides on either side of the unsupported middle, wherein the two supported sides are mounted on the bonding layer; and
a cavity inside the first pressure sensor, wherein the cavity is enclosed by a sidewalls made of the bonding layer, a bottom surface made of the support body and a top surface made of the unsupported middle of the semiconductor die;

wherein the semiconductor die comprises a pressure sensing circuitry, and an IC interface coupled to the pressure sensing circuitry;
wherein the pressure sensing circuitry is disposed in the unsupported middle, and over a portion of the cavity;
wherein the pressure sensing circuitry is adapted to be responsive to a bending of the semiconductor die through the unsupported middle;
wherein the IC interface comprises a transceiver circuit, and an internal antenna trace coupled to the transceiver circuit; and
wherein the internal antenna trace is disposed over an area where a supported side of the semiconductor die is mounted on the support body.

2. The pressure sensing system according to claim 1 , wherein the first main body comprises an opening through the first main body at a position external to the first pressure sensor, wherein the opening is used to accept an attachment that secures the first main body to the first member or to the second member.

3. The pressure sensing system according to claim 1 , further comprising:
a substrate with a first portion surrounding the first pressure sensor, and a second portion that is an arm extending away from the first portion and extending outside of the first main body;
wire bonding connecting the first pressure sensor to the first portion of the substrate; and
a radio frequency (RF) connector that is coupled with the substrate, and that is disposed outside of the first main body, wherein the RF connector is adapted to transmit output of the first pressure sensor to an external system.

4. The pressure sensing system according to claim 1 , further comprising a radio frequency (RF) concentrator that is external to the first pressure sensor, and that is adapted to receive an output of the first pressure sensor and transmit the output to an external system that monitors the pressure sensing system.

5. The pressure sensing system according to claim 1 , further comprising a first external antenna trace that is external to the first pressure sensor, wherein the first external antenna trace is coupled to the internal antenna trace.

6. The pressure sensing system according to claim 5 , wherein the internal antenna trace and the first external antenna trace are electrically conductive, so that the first external antenna trace is adapted to supply power to the semiconductor die through the internal antenna trace.

7. The pressure sensing system according to claim 5 , wherein the first pressure sensor further comprises a substrate that is adjacent to the semiconductor die and that surrounds the semiconductor die, wherein the first external antenna trace surrounds the semiconductor die, and wherein the first external antenna trace is carried in the substrate, and is coupled to the transceiver circuit.

8. The pressure sensing system according to claim 7 , further comprising a first RF concentrator that is external to the first main body and external to the first pressure sensor, wherein the first RF concentrator is adapted to receive an output from the first external antenna trace in the first pressure sensor and transmit the output to a monitoring system that is remote from the pressure sensing system, the first member, and the second member.

9. The pressure sensing system according to claim 8 , wherein the first RF concentrator comprises an antenna adapted to wirelessly transmit the output to the monitoring system, wherein the monitoring system is adapted to receive a plurality of outputs from a plurality of pressure sensors installed in the structure, wherein the plurality of pressure sensors includes the first pressure sensor and a second pressure sensor.

10. The pressure sensing system according to claim 5 , further comprising:
a first substrate carrying the first external antenna trace, wherein the first substrate extends away from the first pressure sensor;
a first RF connector that is coupled to the first substrate, and that is disposed externally to the first pressure sensor;
an external system adapted to receive outputs of the pressure sensing system; and
a wire connecting the first RF connector to the external system;
wherein the first RF connector is adapted to transmit, via the wire, an output of the first pressure sensor to the external system.

11. The pressure sensing system according to claim 10 , further comprising:
a second pressure sensor carried in the interior of the first main body, wherein the second pressure sensor is disposed remote from the first pressure sensor;
a second external antenna trace that is coupled to the second pressure sensor;
a second substrate carrying the second external antenna trace, wherein the second substrate extends from the second pressure sensor; and
a second RF connector coupled to the second substrate;
wherein the wire connects the second RF connector to the first RF connector.

12. The pressure sensing system according to claim 10 , further comprising:
a second main body configured to distribute a load between a third member and a fourth member positioned against the third member in the structure, wherein the second main body has an interior and an exterior, wherein the second main body is disposed between the third member and the fourth member, and wherein the first member and the third member are different or same members, and the second member and the fourth member are different or same members; and
a second pressure sensor carried in the interior of the second main body;
a second external antenna trace that is coupled to the second pressure sensor;
a second substrate carrying the second external antenna trace, wherein the second substrate extends away from the second pressure sensor; and
a second RF connector coupled to the second substrate;
wherein the wire connects the second RF connector to the first RF connector.

13. The pressure sensing system according to claim 12 , wherein the first main body comprises a first washer, and the second main body comprises a second washer that is different from the first washer.

14. A pressure sensing system, comprising:
a first pressure monitor disposed between a first member and a second member that is positioned against the first member, and that experiences a first load applied between the first member and the second member;
a first pressure sensor carried in an interior of the first pressure monitor; and
an external system adapted to monitor for output from the first pressure monitor;
wherein the first pressure sensor comprises
a support body,
a semiconductor die;
a bonding layer physically attaching the semiconductor die to the support body, the bonding layer being

Assignees

• St Microelectronics Srl

Inventors

• Pagani Alberto
• Ziglioli Federico Giovanni
• Murari Bruno

Classifications

• G01L5/243

  using washers · CPC title

• G01L5/0038 Primary

  applying a pushing force · CPC title

• F16B31/028

  with a load-indicating washer or washer assembly · CPC title

• G01L1/20

  by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids (of piezo-resistive materials G01L1/18); by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress · CPC title

• G01L1/005 Primary

  by electrical means and not provided for in G01L1/06 - G01L1/22 · CPC title