Method and apparatus for measuring a structure on a substrate

Patent metadata

Field	Value
Publication number	US-10788765-B2
Application number	US-201816478068-A
Country	US
Kind code	B2
Filing date	Jan 10, 2018
Priority date	Jan 25, 2017
Publication date	Sep 29, 2020
Grant date	Sep 29, 2020

Abstract

As increasing numbers of layers, using increasing numbers of specific materials, are deposited on substrates, it becomes increasingly difficult to detect alignment marks accurately for, for example, applying a desired pattern onto a substrate using a lithographic apparatus, in part due to one or more of the materials used in one or more of the layers being wholly or partially opaque to the radiation used to detect alignment marks. In a first step, the substrate is illuminated with excitation radiation. In a second step, at least one effect associated with a reflected material effect scattered by a buried structure is measured. The effect may, for example, include a physical displacement of the surface of the substrate. In a third step, at least one characteristic of the structure based on the measured effect is derived.

First claim

The invention claimed is:

1. A method for measuring a structure on a substrate, the structure being located beneath at least one layer deposited on the substrate, the method comprising:
illuminating an excitation area of the substrate with excitation radiation at an excitation time, wherein the excitation radiation causes a material effect to interact with the substrate, and wherein the excitation radiation forms a spatial pattern on a surface of the substrate;
measuring at least one effect associated with a scattered material effect scattered by the structure; and
deriving at least one characteristic of the structure based on the measured at least one effect.

2. The method according to claim 1 , wherein the measuring comprises:
illuminating the substrate with measurement radiation; and
receiving scattered measurement radiation scattered by the substrate, wherein the scattered measurement radiation is representative of the at least one effect.

3. The method according to claim 2 , wherein receiving scattered measurement radiation comprises using a detector, wherein the detector is selected from: an interferometer; a darkfield detector; a differential detector; a lensless detection system; a single pixel detector; a phase contrast detector; or a CCD detector.

4. The method according to claim 1 , wherein the excitation radiation comprises at least a first excitation beam, and wherein the illuminating the substrate with excitation radiation comprises using a radiation forming element so as to cause the at least first excitation beam to form the spatial pattern on a surface of the substrate.

5. The method according to claim 1 , wherein the at least one effect comprises at least one selected from: a physical displacement of the surface of the substrate, a change in at least one optical property of the surface of the substrate, or a change in at least one physical quantity of the surface of the substrate.

6. The method according to claim 5 , wherein the at least one effect is formed as a spatially periodic pattern on the surface of the substrate.

7. The method according to claim 5 , wherein the at least one effect is a transient pattern on the surface of the substrate.

8. The method according to claim 7 , wherein the transient pattern is a diffraction pattern of at least a portion of the structure.

9. The method according to claim 7 , wherein the measuring comprises:
illuminating the substrate with measurement radiation at one or more predetermined time interval(s) from the excitation time, and
receiving scattered measurement radiation scattered by the substrate at each one of the one or more predetermined time interval(s), wherein the scattered measurement radiation is representative of the transient pattern at respective one or more predetermined time interval(s).

10. The method according to claim 7 , wherein the transient pattern is a spatially periodic pattern.

11. The method according to claim 9 , wherein the substrate is illuminated with measurement radiation at one or more predetermined portion(s) of the excitation area.

12. The method according to claim 1 , wherein the excitation radiation is configured to generate a diffraction effect directly corresponding to a periodic pattern of the structure.

13. The method according to claim 1 , wherein the material effect is an acoustic wave.

14. The method according to claim 1 , wherein the material effect is a thermal diffusion.

15. The method according to claim 2 , wherein at least one characteristic of the measurement radiation is chosen in dependency on one or more characteristics or material properties of at least one layer of the substrate.

16. A method of manufacturing devices, wherein device features are formed on a series of substrates by a lithographic process using a lithographic apparatus, and wherein a property of at least one of the substrates is measured using the method of claim 1 , and wherein the measured property is used to adjust a parameter of the lithographic process.

17. A non-transitory computer program product containing one or more sequences of machine-readable instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
cause illumination of an excitation area of a substrate with excitation radiation at an excitation time, wherein the excitation radiation causes a material effect to interact with the substrate, and wherein the excitation radiation forms a spatial pattern on a surface of the substrate;
cause measurement of at least one effect associated with a scattered material effect scattered by a structure on the substrate, the structure being located beneath at least one layer deposited on the substrate; and
derive at least one characteristic of the structure based on the measured at least one effect.

18. The computer program product of claim 17 , wherein the instructions configured to cause the measurement are further configured to cause:
illumination of the substrate with measurement radiation; and
detection of scattered measurement radiation scattered by the substrate, wherein the scattered measurement radiation is representative of the at least one effect.

19. The computer program product of claim 17 , wherein the at least one effect comprises at least one selected from: a physical displacement of the surface of the substrate, a change in at least one optical property of the surface of the substrate, or a change in at least one physical quantity of the surface of the substrate.

20. A lithographic apparatus, comprising:
a measurement system comprising an output to supply radiation and a detector configured to detect radiation; and
the computer program product of claim 17 .

Assignees

• Asml Netherlands Bv

Inventors

• Witte Stefan Michiel
• Antoncecchi Alessandro
• Edward Stephen
• Zhang Hao
• Planken Paulus Clemens Maria
• Eikema Kjeld Sijbrand Eduard
• Goorden Sebastianus Adrianus
• Huisman Simon Reinald
• Setija Irwan Dani

Classifications

• G03F9/7088

  Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection · CPC title

• G01B2210/56

  Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth · CPC title

• G01B17/06

  for measuring contours or curvatures · CPC title

• G03F9/7049 Primary

  Technique, e.g. interferometric · CPC title

• G03F9/7084

  Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels · CPC title