Methods for forming doped silicon oxide thin films

Patent metadata

Field	Value
Publication number	US-10784105-B2
Application number	US-201916702915-A
Country	US
Kind code	B2
Filing date	Dec 4, 2019
Priority date	Nov 4, 2011
Publication date	Sep 22, 2020
Grant date	Sep 22, 2020

Abstract

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

First claim

We claim:

1. A method for depositing doped silicon oxide on a substrate in a reaction chamber comprising at least one doped silicon oxide deposition cycle comprising, in order:
contacting the substrate with a silicon precursor;
exposing the substrate to a purge gas;
contacting the substrate with a first reactive species;
contacting the substrate with a dopant precursor;
contacting the substrate with a second reactive species; and
exposing the substrate to a purge gas.

2. The method of claim 1 , wherein the substrate is exposed to a purge gas after contacting the substrate with the first reactive species and prior to contacting the substrate with the dopant precursor.

3. The method of claim 1 , wherein the substrate is exposed to a purge gas after contacting the substrate with the dopant precursor and prior to contacting the substrate with the second reactive species.

4. The method of claim 1 , wherein the doped silicon oxide deposition cycle comprises, in order:
contacting the substrate with the silicon precursor;
exposing the substrate to the purge gas;
contacting the substrate with the first reactive species;
exposing the substrate to the purge gas;
contacting the substrate with the dopant precursor;
exposing the substrate to the purge gas;
contacting the substrate with the second reactive species; and
exposing the substrate to the purge gas.

5. The method of claim 1 , wherein the doped silicon oxide deposition cycle is repeated two or more times.

6. The method of claim 1 , additionally comprising at least one second doped silicon oxide deposition cycle in which the substrate is contacted with the silicon precursor after being contacted with the dopant precursor.

7. The method of claim 1 , wherein the method is an atomic layer deposition (ALD) process.

8. The method of claim 1 , wherein oxygen is flowed to the reaction chamber continuously during the doped silicon oxide deposition cycle.

9. The method of claim 1 , wherein the first reactive species comprises oxygen.

10. The method of claim 9 , wherein the first reactive species is formed by generating an oxygen plasma in the reaction chamber.

11. The method of claim 1 , wherein the second reactive species comprises oxygen.

12. The method of claim 11 , wherein the second reactive species is formed by generating an oxygen plasma in the reaction chamber.

13. The method of claim 12 , wherein contacting the substrate with the second reactive species comprises generating a plasma above the substrate.

14. The method of claim 11 , wherein contacting the substrate with the second reactive species comprises contacting the substrate with a plasma generated remotely.

15. The method of claim 11 , wherein the second reactive species comprises a non-excited species of oxygen.

16. The method of claim 1 , wherein the silicon precursor comprises a Si—N bond.

17. The method of claim 1 , wherein the silicon precursor is an aminosilane or aminesilane.

18. The method of claim 17 , wherein the silicon precursor is dialkylaminesilane.

19. The method of claim 1 , wherein the dopant precursor is a boron compound or a phosphorous compound.

20. The method of claim 1 , further comprising depositing a cap layer on the doped silicon dioxide.

Assignees

• Asm Int Nv

Inventors

• Takamure Noboru
• Fukazawa Atsuki
• Fukuda Hideaki
• Niskanen Antti
• Haukka Suvi
• Nakano Ryu
• Namba Kunitoshi

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P32/171

  being group IV material · CPC title

• H10P32/141

  the applied layer comprising oxides only · CPC title

• H10P32/19

  Diffusion sources · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title