Methods for forming doped silicon oxide thin films

Patent metadata

Field	Value
Publication number	US-10147600-B2
Application number	US-201815873776-A
Country	US
Kind code	B2
Filing date	Jan 17, 2018
Priority date	Nov 4, 2011
Publication date	Dec 4, 2018
Grant date	Dec 4, 2018

Abstract

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

First claim

We claim:

1. A method for depositing doped silicon oxide on a substrate in a reaction chamber comprising at least one deposition cycle comprising in order:
contacting the substrate with a silicon precursor;
exposing the substrate to a purge gas to remove excess silicon precursor;
contacting the substrate with a first reactive species after contacting the substrate with the silicon precursor, wherein the first reactive species is formed by generating an oxygen plasma in the reaction chamber;
exposing the substrate to a purge gas to remove excess first reactive species;
contacting the substrate with a dopant precursor;
exposing the substrate to a purge gas to remove excess dopant precursor;
contacting the substrate with a second reactive species after contacting the substrate with the dopant precursor; and
exposing the substrate to a purge gas to remove excess second reactive species.

2. The method of claim 1 , wherein the deposition cycle is repeated two or more times.

3. The method of claim 1 , wherein the method is an atomic layer deposition (ALD) process.

4. The method of claim 1 , wherein oxygen is flowed to the reaction chamber continuously during the deposition cycle.

5. The method of claim 1 , wherein the second reactive species comprises oxygen.

6. The method of claim 1 , wherein contacting the substrate with the second reactive species comprises generating a plasma above the substrate.

7. The method of claim 1 , wherein contacting the substrate with the second reactive species comprises contacting the substrate with a plasma generated remotely.

8. The method of claim 1 , wherein the second reactive species comprises a non-excited species of oxygen.

9. The method of claim 1 , wherein the silicon precursor comprises a Si—N bond.

10. The method of claim 1 , wherein the silicon precursor is an aminosilane, aminodisilane or aminesilane.

11. The method of claim 1 , wherein the silicon precursor is a dialkylaminesilane, a bisdialkylaminesilane, a tris(dialkylamine)silane, or a tetrakis(dialkylamine)silane.

12. The method of claim 1 , wherein the silicon precursor is BDEAS (bis(diethylamino)silane).

13. The method of claim 1 , wherein the substrate is contacted with the dopant precursor before being contacted with the silicon precursor in the deposition cycle.

14. The method of claim 1 , wherein the substrate is contacted with the silicon precursor before being contacted with the dopant precursor in the deposition cycle.

15. The method of claim 1 , wherein the deposition cycle comprises, in order:
contacting the substrate with the dopant precursor;
contacting the substrate with the second reactive species;
contacting the substrate with the silicon precursor; and
contacting the substrate with the first reactive species.

16. The method of claim 1 , wherein the deposition cycle comprises, in order:
contacting the substrate with the silicon precursor;
contacting the substrate with the first reactive species;
contacting the substrate with the dopant precursor; and
contacting the substrate with the second reactive species.

17. The method of claim 1 , further comprising depositing a cap layer on the doped silicon dioxide.

18. The method of claim 1 , wherein the dopant precursor is a boron compound or a phosphorous compound.

19. The method of claim 18 , wherein the dopant precursor is trimethylboron, triethylboron, trimethylphosphate, or PH 3 .

20. The method of claim 1 , wherein the dopant precursor is an arsenic or carbon compound.

Assignees

• Asm Int Nv

Inventors

• Takamure Noboru
• Fukazawa Atsuki
• Fukuda Hideaki
• Niskanen Antti
• Haukka Suvi
• Nakano Ryu
• Namba Kunitoshi

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P32/171

  being group IV material · CPC title

• H10P32/141

  the applied layer comprising oxides only · CPC title

• H10P32/19

  Diffusion sources · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title