Laminated magnetic materials for on-chip magnetic inductors/transformers

Patent metadata

Field	Value
Publication number	US-10784045-B2
Application number	US-201514854523-A
Country	US
Kind code	B2
Filing date	Sep 15, 2015
Priority date	Sep 15, 2015
Publication date	Sep 22, 2020
Grant date	Sep 22, 2020

Abstract

A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.

First claim

What is claimed is:

1. A magnetic inductor, comprising:
a barrier layer deposited directly on top of a wafer, the barrier layer being an oxide;
an adhesion layer deposited directly on top of the barrier layer, the adhesion layer comprising TiN;
a magnetic seed layer deposited directly on top of the adhesion layer, the magnetic seed layer comprising a layer of an alloy material, the layer of the alloy material is selected from a group consisting of NiFe, CoFe, NiFeBP, and CoFeBP;
magnetic layers and non-magnetic spacer layers alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited, the odd number being one less than the even number, the nonmagnetic spacer layers comprising Ni 3 P;
wherein the magnetic layers comprise CoWP, a combination of the magnetic spacer layers having Ni 3 P at a thickness from 10-40 nm and the magnetic layers having CoWP at a thickness of 250 nm being formed with a resistivity of 120-140 μΩ·cm.

2. The magnetic inductor of claim 1 , wherein the non-magnetic spacer layers are each of equal thickness.

3. The magnetic inductor of claim 1 , wherein the wafer is a silicon wafer.

Assignees

• IBM

Inventors

• Deligianni Hariklia
• Gallagher William J
• Kitayaporn Sathana
• O'Sullivan Eugene J
• Romankiw Lubomyr T
• Wang Naigang
• Yoon Joonah

Classifications

• H01F10/3204 Primary

  Exchange coupling of amorphous multilayers · CPC title

• H01F41/043 Primary

  by thick film techniques · CPC title

• H01F10/13

  Amorphous metallic alloys, e.g. glassy metals {(H01F10/3204 takes precedence)} · CPC title

• H01F5/003

  Printed circuit coils · CPC title