High speed thin film two terminal resistive memory

Patent metadata

Field	Value
Publication number	US-10777267-B2
Application number	US-201815864148-A
Country	US
Kind code	B2
Filing date	Jan 8, 2018
Priority date	Jan 8, 2018
Publication date	Sep 15, 2020
Grant date	Sep 15, 2020

Abstract

A battery article of manufacture comprises a plurality of components operatively associated with one another, the plurality of components comprising an electrode comprised of a material that can take up ions and discharge ions in a charging and discharging process, an electrolyte comprised of the ions, the article of manufacture also including a component comprising at least one barrier positioned between the electrolyte and the electrode, the barrier comprised of a material that substantially prevents the ions from combining with the electrode and having a structure that substantially prevents the ions from combining with the electrode, but allows the ions to travel toward or away from the electrode in the charging or discharging process.

First claim

We claim:

1. A battery-based resistive memory article of manufacture comprising a plurality of components operatively associated with one another, said plurality of components comprising an electrode comprised of a material that can take up ions and discharge ions in a charging and discharging process, an electrolyte comprised of said ions, said article of manufacture also including a component comprising at least one barrier positioned between said electrolyte and said electrode, said barrier comprised of a material that substantially prevents said ions from combining with said electrode and having a structure that substantially prevents said ions from combining with said electrode, but allows said ions to travel toward or away from said electrode in said charging or discharging process, a location of said ions indicating a data value stored by said battery-based resistive memory article of manufacture.

2. A battery-based resistive memory article of manufacture comprising a plurality of components operatively associated with one another, said plurality of components comprising at least one first electrode and at least one second electrode, said first electrode and said second electrode selected from at least one cathode and at least one anode, said cathode and said anode each comprised of a material that can take up ions and discharge ions in a charging and discharging process, an electrolyte between said electrodes, said electrolyte comprised of said ions, said article of manufacture also including a component comprising at least one barrier positioned between said electrolyte and at least one of said electrodes, said barrier comprised of a material that substantially prevents said ions from combining with at least one of said electrodes and having a structure that substantially prevents said ions from combining with at least one of said electrodes, but allows said ions to travel toward or away from one said electrode to the other said electrode in said charging or discharging process, a location of said ions indicating a data value stored by said battery-based resistive memory article of manufacture.

3. The article of manufacture of claim 1 wherein each ion is comprised of an alkali metal cation.

4. The article of manufacture of claim 2 wherein each ion is comprised of an alkali metal cation.

5. The article of manufacture of claim 1 wherein said electrode comprises an LCO cathode.

6. The article of manufacture of claim 2 wherein said electrode comprises an LCO cathode.

7. The article of manufacture of claim 1 wherein said barrier is comprised of a Group IIIA element.

8. The article of manufacture of claim 1 wherein said barrier is comprised of aluminum.

9. The article of manufacture of claim 2 wherein said barrier is comprised of a Group IIIA element.

10. The article of manufacture of claim 2 wherein said barrier is comprised of aluminum.

11. The article of manufacture of claim 1 wherein said barrier is comprised of a Group IVB element.

12. The article of manufacture of claim 1 wherein said barrier is comprised of a Group VB element.

13. The article of manufacture of claim 2 wherein said barrier is comprised of a Group IVB element.

14. The article of manufacture of claim 2 wherein said barrier is comprised of a Group VB element.

15. The article of manufacture of claim 1 configured to comprise a chargeable and dischargeable variable resistance high speed thin film two terminal resistive battery memory.

16. The article of manufacture of claim 1 configured to comprise a chargeable and dischargeable variable resistance high speed thin film two terminal resistive battery memory operatively associated with a computing circuit.

17. The article of manufacture of claim 1 configured to comprise a chargeable and dischargeable variable resistance high speed thin film two terminal resistive battery memory operatively associated with a variable resistance computing circuit.

18. The article of manufacture of claim 1 configured to comprise a chargeable and dischargeable variable resistance high speed thin film two terminal resistive battery memory operatively associated with a neuromorphic computing circuit.

19. The article of manufacture of claim 1 configured to comprise a chargeable and dischargeable variable resistance high speed thin film two terminal resistive battery memory operatively associated with a memristor computing circuit.

20. The article of manufacture of claim 2 configured to comprise a chargeable and dischargeable variable resistance high speed thin film two terminal resistive battery memory.

21. The article of manufacture of claim 2 configured to comprise a chargeable and dischargeable variable resistance high speed thin film two terminal resistive battery memory operatively associated with a computing circuit.

22. The article of manufacture of claim 2 configured to comprise a chargeable and dischargeable variable resistance high speed thin film two terminal resistive battery memory operatively associated with a variable resistance computing circuit.

23. The article of manufacture of claim 2 configured to comprise a chargeable and dischargeable variable resistance high speed thin film two terminal resistive battery memory operatively associated with a neuromorphic computing circuit.

24. The article of manufacture of claim 2 configured to comprise a chargeable and dischargeable variable resistance high speed thin film two terminal resistive battery memory operatively associated with a memristor computing circuit.

25. The article of manufacture of claim 1 , wherein a movement of said ions from one of said electrodes toward another of said electrodes occurs during said charging process and said discharging process, wherein said charging and discharging processes function to provide write-erase configurations of the battery-based resistive memory article of manufacture, and wherein said article of manufacture is configurable to operate in an array of a plurality of battery-based resistive memory devices.

Assignees

• IBM

Inventors

• Li Ning
• Sadana Devendra

Classifications

• H01M50/434

  Ceramics · CPC title

• Y02P70/50

  Manufacturing or production processes characterised by the final manufactured product · CPC title

• H01M4/366

  as layered products · CPC title

• G11C13/0009 Primary

  RRAM elements whose operation depends upon chemical change · CPC title

• G11C2213/30

  Resistive cell, memory material aspects · CPC title