Elimination of H2S in immersion tin plating solution

Patent metadata

Field	Value
Publication number	US-10774425-B2
Application number	US-201715607925-A
Country	US
Kind code	B2
Filing date	May 30, 2017
Priority date	May 30, 2017
Publication date	Sep 15, 2020
Grant date	Sep 15, 2020

Abstract

Upon use of an immersion tin plating solution, contaminants build in the solution, which cause the plating rate and the quality of the plated deposit to decrease. One primary contaminant, which builds in the plating solution upon use, is hydrogen sulfide, H2S. If a gas is bubbled or blown through the solution, contaminants, especially hydrogen sulfide, can be effectively removed from the solution and, as a result, the high plating rate and plate quality can be restored or maintained. In this regard, any gas can be used, however, it is preferable to use a gas that will not detrimentally interact with the solution, other than to strip out contaminants. Nitrogen is particularly preferred for this purpose because it is efficient at stripping out contaminants, including hydrogen sulfide, but does not induce the oxidation of the tin ions from their divalent state to the tetravalent state, which is detrimental.

First claim

What is claimed is:

1. A process for plating tin or tin alloys onto the surface of a metal substrate through immersion plating, said process comprising:
contacting the metal substrate with an immersion tin plating solution comprising:
i. divalent tin ions, wherein the divalent tin ions comprises tin sulfate or tin methane sulfonate, wherein the concentration of divalent tin ions is between 5 g/L and 20 g/L;
ii. an acid, wherein the acid is used to maintain a pH between about 0 and about 5 in the plating solution; and
iii. a complexing agent, wherein the complexing agent comprises thiourea, wherein the concentration of thiourea is between about 60 g/L and about 120 g/L;
wherein hydrogen sulfide builds up in the plating solution, causing plating quality to decrease and a plating rate to decrease more than ten percent from an initial plating rate, wherein an inert gas is bubbled through or forcibly contacted with the plating solution to remove hydrogen sulfide from the plating solution,
whereby the plating rate and plating quality can be restored or maintained, and
wherein the plating solution maintains a plating rate within ten percent of the initial plating rate of the plating solution after 1000 operating hours.

2. A process according to claim 1 wherein the metal substrate comprises copper.

3. A process according to claim 1 , wherein the metal substrate is selected from the group consisting of printed circuit boards, electronic connectors, integrated chip holders, integrated chips, and electronic interconnect devices.

4. A process according to claim 1 , wherein the inert gas comprises nitrogen gas at 90% by weight or higher purity.

5. A process according to claim 1 , wherein the gas is sparged into the plating solution using a sparger that creates bubbles of the gas within the plating solution which bubbles are within the size range of 1/16 th of an inch to 100 microns.

6. A process according to claim 1 , wherein the metal substrate is contacted with the plating solution while the metal substrate is moved along on a conveyor.

7. A process according to claim 6 , wherein the gas is sparged into a sump containing the plating solution below the conveyor.

8. A process according to claim 1 , wherein the initial plating rate of the plating solution is 0.08 μm per minute or higher.

9. A process according to claim 5 , wherein the metal substrate is selected from the group consisting of printed circuit boards, electronic connectors, integrated chip holders, integrated chips, and electronic interconnect devices.

10. A process according to claim 5 , wherein the gas comprises nitrogen gas at 90% by weight or higher purity.

11. A process according to claim 6 , wherein the gas is sparged into the plating solution using a sparger that creates bubbles of the gas within the plating solution which bubbles are within the size range of 1/16th of an inch to 100 microns.

12. A process according to claim 10 , wherein the metal substrate is contacted with the plating solution while the metal substrate is moved along on a conveyor.

13. A process according to claim 12 , wherein the gas is sparged into a sump containing the plating solution below the conveyor.

14. A process according to claim 1 wherein the gas is bubbled through the plating solution by sparging bubbles of the gas through the plating solution.

15. A process according to claim 14 , wherein the gas is sparged into the plating solution using a sparger that creates bubbles of the gas within the plating solution which bubbles are within the size range of 500 microns to 100 microns.

16. A process according to claim 1 , wherein the plating solution further comprises a rate enhancer, wherein the rate enhancer is selected from the group consisting of sodium hypophosphite, potassium hypophosphite, ammonium hypophosphite, phosphinic acid and combinations thereof.

17. A process according to claim 16 , wherein the concentration of the rate enhancer is at least about 0.45 M.

18. A process according to claim 16 , wherein the rate enhancer comprises sodium hypophosphite, wherein the concentration of sodium hypophosphite is between about 70 g/L and about 100 g/L.

19. A process according to claim 1 , wherein the plating solution further comprises a supplemental complexing agent in a concentration between about 1 g/L and about 20 g/L.

20. A process for depositing tin or tin alloys onto copper features on a printed wiring board substrate through immersion plating, said process comprising:
contacting the copper features with an immersion tin plating solution comprising:
i. divalent tin ions, wherein the divalent tin ions comprise tin sulfate or tin methane sulfonate, wherein the concentration of divalent tin ions is between 5 g/L and 20 g/L;
ii. an acid, wherein the acid is used to maintain a pH between about 0 and about 5 in the plating solution; and
iii. a complexing agent, wherein the complexing agent comprises thiourea, wherein the concentration of thiourea is between about 60 g/L and about 120 g/L;
wherein the printed wiring board substrate is immersed in the immersion tin plating solution to deposit tin on the copper features at an initial plating rate of at least about 0.08 μm/minute to deposit a thickness of about 0.5 to about 1.5 μm of tin on the copper features;
wherein hydrogen sulfide builds up in the plating solution during use, causing plating quality to decrease and a plating rate to decrease more than ten percent from an initial plating rate, wherein nitrogen gas is bubbled through the plating solution to remove hydrogen sulfide from the plating solution,
whereby the plating rate and plating quality can be restored or maintained, and
wherein the plating solution is capable of maintaining a plating rate within ten percent of the initial plating rate of the plating solution after at least 1000 operating hours.

21. The process according to claim 20 , wherein nitrogen gas is bubbled through the plating solution using a gas dispersion sparger to evenly disperse the nitrogen gas throughout the plating solution.

22. The process according to claim 20 , wherein the tin plating solution is maintained at a temperature of about 70° C.

Assignees

• Macdermid Enthone Inc

Inventors

• Santos Cherry S
• Banker Tyler
• Swanson John
• Long Ernest
• Xu Fengting

Classifications

• H05K3/244

  Finish plating of conductors, especially of copper conductors, e.g. for pads or lands (selective plating methods H05K3/243; finish plating of conductors made by printing techniques H05K3/246; solder as finish H05K3/3465) · CPC title

• H05K3/187

  means therefor, e.g. baths, apparatus · CPC title

• C23C18/54 Primary

  Contact plating, i.e. electroless electrochemical plating · CPC title

• C23C18/1682

  Control of atmosphere · CPC title

• C23C18/1664

  with additional means during the plating process · CPC title