Tunable narrow bandpass MEMS technology filter using an arch beam microresonator

Patent metadata

Field	Value
Publication number	US-10771041-B2
Application number	US-201716318220-A
Country	US
Kind code	B2
Filing date	Aug 8, 2017
Priority date	Aug 18, 2016
Publication date	Sep 8, 2020
Grant date	Sep 8, 2020

Abstract

Embodiments of a tunable bandpass microelectromechanical (MEMS) filter are described. In one embodiment, such a filter includes a pair of arch beam microresonators, and a pair of voltage sources electrically coupled to apply a pair of adjustable voltage biases across respective ones of the pair of arch beam microresonators. The pair of voltage sources offer independent tuning of the bandwidth of the filter. Based on the structure and arrangement of the filter, it can be tunable by 125% or more by adjustment of the adjustable voltage bias. The filter also has a relatively low bandwidth distortion, can exhibit less than 2.5 dB passband ripple, and can exhibit sideband rejection in the range of at least 26 dB.

First claim

At least the following is claimed:

1. A tunable bandpass microelectromechanical (MEMS) filter, comprising:
at least one arch beam microresonator;
a first voltage source electrically coupled to a first end of the at least one arch beam to apply a static voltage bias to the arch beam microresonator; and
a second voltage source electrically coupled to both the first end and a second end of the at least one arch beam microresonator to apply an adjustable voltage bias across the arch beam microresonator.

2. The tunable bandpass MEMS filter according to claim 1 , wherein a bandpass center frequency of the tunable bandpass MEMS filter is tunable by at least 125% of the bandpass center frequency by adjustment of the adjustable voltage bias.

3. The tunable bandpass MEMS filter according to claim 1 , wherein the tunable bandpass MEMS filter has a relatively low bandwidth distortion.

4. The tunable bandpass MEMS filter according to claim 3 , wherein the relatively low bandwidth distortion is about ±50 Hz.

5. The tunable bandpass MEMS filter according to claim 1 , wherein the second voltage source offers independent tuning of a passband of the tunable bandpass MEMS filter.

6. The tunable bandpass MEMS filter according to claim 1 , wherein a response of the tunable bandpass MEMS filter exhibits less than 2.5 dB passband ripple.

7. The tunable bandpass MEMS filter according to claim 1 , wherein a response of the tunable bandpass MEMS filter exhibits sideband rejection in a range of at least 26 dB.

8. The tunable bandpass MEMS filter according to claim 1 , further comprising at least one drive electrode adjacent to a first side of the at least one arch beam microresonator, wherein the at least one drive electrode is driven by an input signal.

9. The tunable bandpass MEMS filter according to claim 8 , further comprising at least one sense electrode adjacent to a second side of the at least one arch beam microresonator, the at least one sense electrode configured to provide at least one corresponding output signal.

10. The tunable bandpass MEMS filter according to claim 9 , wherein a differential amplifier generates a filtered output from the at least one corresponding output signal.

11. A tunable bandpass microelectromechanical (MEMS) filter, comprising:
first and second arch beam microresonators electrically connected in series;
a first voltage source that is electrically coupled to opposite ends of the first arch beam microresonator to apply a first adjustable voltage bias across the first arch beam microresonator;
a second voltage source that is electrically coupled to opposite ends of the second arch beam microresonator to apply a second adjustable voltage bias across the second arch beam microresonator; and
a third voltage source electrically coupled to a first end of the first arch beam to apply a static voltage bias to the first arch beam microresonator.

12. The tunable bandpass MEMS filter according to claim 11 , wherein a bandpass center frequency of the tunable bandpass MEMS filter is tunable by at least 125% of the bandpass center frequency by adjustment of the adjustable voltage bias.

13. The tunable bandpass MEMS filter according to claim 11 , wherein the tunable bandpass MEMS filter has a relatively low bandwidth distortion.

14. The tunable bandpass MEMS filter according to claim 13 , wherein the relatively low bandwidth distortion is about ±50 Hz.

15. The tunable bandpass MEMS filter according to claim 11 , wherein the first and second voltage sources offer independent tuning of a passband of the tunable bandpass MEMS filter.

16. The tunable bandpass MEMS filter according to claim 11 , wherein a response of the tunable bandpass MEMS filter exhibits less than 2.5 dB passband ripple.

17. The tunable bandpass MEMS filter according to claim 11 , wherein a response of the tunable bandpass MEMS filter exhibits sideband rejection in a range of at least 26 dB.

18. The tunable bandpass MEMS filter according to claim 11 , further comprising a pair of drive electrodes, each of the pair of drive electrodes adjacent to a corresponding one of the first and second arch beam microresonators, wherein the pair of drive electrodes is driven by an input signal.

19. The tunable bandpass MEMS filter according to claim 18 , further comprising a pair of sense electrodes, each of the pair of sense electrodes adjacent to a corresponding one of the first and second arch beam microresonators, opposite to the pair of drive electrodes, the pair of sense electrodes configured to provide a pair of output signals.

20. The tunable bandpass MEMS filter according to claim 19 , wherein a differential amplifier is configured to generate a filtered output from the pair of output signals received from the pair of sense electrodes.

Assignees

• Univ King Abdullah Sci & Tech

Inventors

• Al Hafiz Md Abdullah
• Younis Mohammad Ibrahim
• Kosuru Lakshmoji

Classifications

• H03H2009/02181

  by application of heat from a heat source · CPC title

• H03H9/02393

  Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor · CPC title

• H03H9/2447

  Beam resonators (H03H9/2468 takes precedence) · CPC title

• H03H9/02409 Primary

  by application of a DC-bias voltage (H03H9/02417 takes precedence) · CPC title

• H03H2009/02173

  of film bulk acoustic resonators [FBAR] · CPC title