Power module

Patent metadata

Field	Value
Publication number	US-10770882-B2
Application number	US-201615543173-A
Country	US
Kind code	B2
Filing date	Apr 6, 2016
Priority date	Apr 6, 2016
Publication date	Sep 8, 2020
Grant date	Sep 8, 2020

Abstract

When a short-circuit failure has occurred in a power semiconductor device provided in a power module, a radical and rapid temperature increase is prevented by instantly interrupting a short-circuit current. A power module 10 has a package 10 a . Provided in the package 10 a are: a MOSFET 21 serving as the power semiconductor device; a resistor 23 serving as a detecting means for detecting an operation state of the MOSFET 21 and outputting a detection signal; and a MOSFET 22 serving as a current-interrupting purpose switch connected in series to the MOSFET 21 . In response to a control signal Si 2 generated on the basis of the detection signal, the MOSFET 22 goes into a conduction state during a normal operation of the MOSFET 21 and goes into an interruption state so as to interrupt a current flowing in the MOSFET 21 when a short-circuit failure has occurred in the MOSFET 21.

First claim

The invention claimed is:

1. A power module wherein a package houses therein:
a current input terminal and a current output terminal;
a power semiconductor device used for a switching purpose to conduct/interrupt a current, which flows from the current input terminal to the current output terminal, according to a switching signal;
a resistor for detecting an operation state of the power semiconductor device; and
a switch for a current-interrupting purpose that is connected in series to the power semiconductor device,
wherein the power semiconductor device, the switch and the resistor are in series connected between the current input terminal and the current output terminal,
one end of the power semiconductor device is connected to the current input terminal, and the other end of the power semiconductor device is connected to the switch at a connection point for connecting the power semiconductor device and the switch to each other,
one end of the switch is connected to the connection point and the other point of the switch is connected to one end of the resistor,
the other end of the resistor is connected to the current output terminal, and
the switch is configured to, in response to a control signal generated on a basis of a voltage between the one end of the switch and the other end of the resistor, go into a conduction state so as to conduct a current flowing in the power semiconductor device during a normal operation of the power semiconductor device and to go into an interruption state so as to interrupt the current flowing in the power semiconductor device when a short-circuit failure has occurred in the power semiconductor device.

2. The power module according to claim 1 , comprising a control circuit provided either inside or outside of the package, wherein
when the voltage between the one end of the switch and the other end of the resistor exceeds a predetermined value, the control circuit determines that the short-circuit failure has occurred in the power semiconductor device and generates the control signal.

Assignees

• Shindengen Electric Mfg

Inventors

• Suzuki Kenichi

Classifications

• H02H3/085 Primary

  making use of a thermal sensor, e.g. thermistor, heated by the excess current (also responsive to the temperature of the protected device H02H5/041, thermal images H02H6/00) · CPC title

• H02H3/08 Primary

  responsive to excess current (responsive to abnormal temperature caused by excess current H02H5/04) · CPC title

• H02M1/0009

  Devices or circuits for detecting current in a converter · CPC title

• H02M1/327

  against abnormal temperatures · CPC title

• H03K2217/0027

  Measuring means of, e.g. currents through or voltages across the switch · CPC title