Semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-10763397-B2
Application number	US-201816202793-A
Country	US
Kind code	B2
Filing date	Nov 28, 2018
Priority date	Mar 2, 2018
Publication date	Sep 1, 2020
Grant date	Sep 1, 2020

Abstract

A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

First claim

What is claimed is:

1. A semiconductor light emitting device, comprising:
a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
a transparent electrode layer on the second conductivity-type semiconductor layer, the transparent electrode layer being spaced apart from an edge of the second conductivity-type semiconductor layer;
a first insulating layer on the light emitting structure to cover the transparent electrode layer, the first insulating layer including a plurality of holes connected to the transparent electrode layer; and
a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

2. The semiconductor light emitting device as claimed in claim 1 , further comprising:
a second insulating layer on the first insulating layer to cover the reflective electrode layer, the second insulating layer including at least one opening connected to the reflective electrode layer; and
a connection electrode on the second insulating layer and connected to the reflective electrode layer through the at, least one opening.

3. The semiconductor light emitting device as claimed in claim 2 , wherein the connection electrode includes:
a first electrode layer having an edge region and an internal region surrounded by the edge region, the edge region having a thickness less than a thickness of the internal region; and
a second electrode layer on the internal region of the first electrode layer.

4. The semiconductor light emitting device as claimed in claim 3 , wherein the edge region of the first electrode layer has a thickness reduced externally.

5. The semiconductor light emitting, device as claimed in claim 3 , wherein the second electrode layer has a thickness greater than a thickness of the first electrode layer.

6. The semiconductor light emitting device as claimed in claim 3 , wherein the first electrode layer includes at least one of silver (Ag), chromium (Cr), nickel (Ni), titanium (Ti), aluminum (Al), rhodium (Rh), ruthenium (Ru), palladium (Pd), gold (Au), copper (Cu), and combinations thereof.

7. The semiconductor light emitting device as claimed in claim 2 , further comprising a transparent protective layer on the first insulating layer to cover the reflective electrode layer.

8. The semiconductor light emitting device as claimed in claim 7 , wherein the transparent protective layer includes at least one of SiO 2 , SiN, TiO 2 , HfO and MgF 2 .

9. The semiconductor emitting device as claimed in claim 7 , wherein the transparent protective layer includes a transparent conductive material, and the connection electrode is electrically connected to the reflective electrode layer through the transparent protective layer.

10. The semiconductor light emitting device as claimed in claim 2 , wherein at least one of the first insulating layer and the second insulating layer includes at least one of SiO 2 , SiN, TiO 2 , HfO, TaO 2 and MgF 2 .

11. The semiconductor light emitting device as claimed in claim 1 , wherein a distance between the transparent electrode layer and the edge of the second conductivity-type semiconductor layer is about 2 μm or more.

12. The semiconductor light emitting device as claimed in claim 1 , wherein the transparent electrode layer includes at least one of indium tin oxide (ITO), zinc-doped indium tin oxide (ZITO), zinc indium oxide (ZIO), gallium indium oxide (GIO), zinc tin oxide (ZTO), fluorine-doped tin oxide (FTC)), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), In 4 Sn 3 O 12 , and Zn (1-x) Mg x O (Zinc Magnesium Oxide, 0≤x≤1).

13. The semiconductor light emitting device as claimed in claim 1 , wherein the reflective electrode layer includes, at least one of Ag, Cr, Ni, Ti, Al, Rh, Ru, Pd, Au, Cu, and combinations thereof.

14. The semiconductor light emitting device as claimed in claim 1 , wherein the first insulating layer has a distributed Bragg reflector (DBR) structure, the DBR structure including insulating films having different refractive indices that are alternately stacked.

15. The semiconductor light emitting device as claimed in claim 1 , further wherein the first insulating layer and the reflective electrode layer have an omni directional reflector (ODR) structure.

16. The semiconductor light emitting device as claimed in claim 1 , further comprising a bonding electrode layer between the first insulating layer and the reflective electrode layer.

17. A semiconductor light emitting device, comprising:
a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
a transparent electrode layer on the second conductivity-type semiconductor layer;
a first insulating layer on the light emitting structure to cover the transparent electrode layer, the first insulating layer including a plurality of holes connected to the transparent electrode layer;
a reflective electrode layer on the first insulating, layer and connected to the transparent electrode layer through the plurality of holes;
a second insulating layer on the first insulating layer to cover the reflective electrode layer, the second insulating layer including at least one opening; and
a connection electrode on the second insulating layer and connected to the reflective electrode layer through the at least one opening,
wherein the connection electrode includes a first electrode layer having an edge region and an internal region surrounded by the edge region, and a second electrode layer on the internal region of the first electrode layer, the edge region having a thickness less than a thickness of the internal region.

18. The semiconductor light emitting device as claimed in claim 17 , wherein the edge region of the first electrode layer has an inclination angle of 30 degrees or less when viewed as a cross-section in a thickness direction.

19. The semiconductor light emitting device as claimed in claim 17 , further comprising:
a third insulating layer on the second insulating layer and including an opening exposing a portion of the connection electrode; and
a bonding electrode on the portion of the connection electrode.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yoon Juheon
• Kil Jung Hwan
• Kim Tae Hun
• Song Hwa Ryong
• Sim Jae In

Classifications

• H10H20/831 Primary

  characterised by their shape · CPC title

• H10H20/835 Primary

  Reflective materials · CPC title

• H10H20/833 Primary

  Transparent materials · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/8512

  Wavelength conversion materials · CPC title