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US-2024371838-A1 · Nov 7, 2024 · US
Semiconductor light-emitting element
US9178116B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178116-B2 |
| Application number | US-201113643623-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 24, 2011 |
| Priority date | Jun 25, 2010 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A semiconductor light-emitting element ( 1 ) including: an n-type semiconductor layer ( 140 ); a light-emitting layer ( 150 ); a p-type semiconductor layer ( 160 ); a transparent conductive layer ( 170 ) laminated on the p-type semiconductor layer; a reflective film ( 180 ) which is composed of a material having optical transparency to light emitted from the light-emitting layer and an insulating property and is laminated on the transparent conductive layer; a p-conductive body ( 200 ) which penetrates the reflective film and is electrically connected to the transparent conductive layer; an n-electrode ( 310 ) electrically connected to the n-type semiconductor layer; and a p-electrode ( 300 ) having a p-adhesion layer ( 301 ) which is laminated on the reflective film, is electrically connected to the other end of the p-conductive body, and is composed of the same material as that for the transparent conductive layer and a p-metal reflective layer ( 302 ) which is laminated on the p-adhesion layer.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor light-emitting element comprising: a first semiconductor layer that is composed of a group-III nitride semiconductor having a first conductivity type; a light-emitting layer that is laminated on one surface of the first semiconductor layer to expose a part of the one surface, and that emits light upon conducting an electric power; a second semiconductor layer that is composed of a group-III nitride semiconductor having a second cond…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10H20/833Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9178116B2 cover?
- A semiconductor light-emitting element ( 1 ) including: an n-type semiconductor layer ( 140 ); a light-emitting layer ( 150 ); a p-type semiconductor layer ( 160 ); a transparent conductive layer ( 170 ) laminated on the p-type semiconductor layer; a reflective film ( 180 ) which is composed of a material having optical transparency to light emitted from the light-emitting layer and an insulati…
- Who is the assignee on this patent?
- Hodota Takashi, Toyoda Gosei Kk
- What technology area does this patent fall under?
- Primary CPC classification H10H20/833. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).