Semiconductor device

Patent metadata

Field	Value
Publication number	US-10763183-B2
Application number	US-201616318537-A
Country	US
Kind code	B2
Filing date	Nov 25, 2016
Priority date	Nov 25, 2016
Publication date	Sep 1, 2020
Grant date	Sep 1, 2020

Abstract

A case (6) surrounds a semiconductor chip (5). A case electrode (7) is attached to an upper face of the case (6). A wire (8) is connected to the semiconductor chip (5) and the case electrode (7). A first holding portion (10) presses down the case electrode (7) on the upper face of the case (6) outside a joint portion where the wire (8) is bonded to the case electrode (7). A second holding portion (11) presses down the case electrode (7) on the upper face of the case (6) inside the joint portion. A recess (12) is formed on the upper face of the case (6). The case electrode (7) is bent such as to fit into the recess (12). The second holding portion (11) is disposed inside the recess (12).

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor chip;
a case surrounding the semiconductor chip;
a case electrode attached to an upper face of the case;
a wire connected to the semiconductor chip and the case electrode;
a first holding portion pressing down the case electrode on the upper face of the case outside a joint portion where the wire is bonded to the case electrode; and
a second holding portion pressing down the case electrode on the upper face of the case inside the joint portion,
wherein a recess is formed on the upper face of the case,
the case electrode is bent such as to fit into the recess, and
the second holding portion is disposed inside the recess.

2. The semiconductor device according to claim 1 , wherein the recess is spaced from an inner end face of the case.

3. The semiconductor device according to claim 1 , wherein a through hole is formed in a bent portion of the case electrode.

4. The semiconductor device according to claim 1 , wherein an upper face of the second holding portion is positioned at a height not greater than a height of an upper face of the joint portion of the case electrode.

5. The semiconductor device according to claim 1 , wherein the semiconductor chip is made of a wide-band-gap semiconductor having a bandgap wider than that of silicon.

6. A semiconductor device comprising:
a semiconductor chip;
a case surrounding the semiconductor chip;
a case electrode attached to an upper face of the case;
a wire connected to the semiconductor chip and the case electrode;
a first holding portion pressing down the case electrode on the upper face of the case outside a joint portion where the wire is bonded to the case electrode; and
a second holding portion pressing down the case electrode on the upper face of the case inside the joint portion,
wherein a recess is formed on the upper face of the case, and
the second holding portion is disposed inside the recess.

7. The semiconductor device according to claim 6 , wherein the recess is a through hole that is reduced in width downward.

8. The semiconductor device according to claim 7 , wherein the recess is a through hole having a trapezoidal cross-sectional shape.

9. The semiconductor device according to claim 6 , wherein an upper face of the second holding portion is positioned at a height not greater than a height of an upper face of the joint portion of the case electrode.

10. The semiconductor device according to claim 6 , wherein the semiconductor chip is made of a wide-band-gap semiconductor having a bandgap wider than that of silicon.

11. A semiconductor device comprising:
a semiconductor chip;
a case surrounding the semiconductor chip;
a case electrode attached to an upper face of the case; and
a wire connected to the semiconductor chip and the case electrode,
wherein a recess is formed on a side face of the case electrode, and
the case electrode is fixed to the case with case resin filled in the recess.

12. The semiconductor device according to claim 11 , wherein the semiconductor chip is made of a wide-band-gap semiconductor having a bandgap wider than that of silicon.

13. A semiconductor device comprising:
a semiconductor chip;
a case surrounding the semiconductor chip;
a case electrode attached to an upper face of the case;
a wire connected to the semiconductor chip and the case electrode;
a first holding portion pressing down the case electrode on the upper face of the case outside a joint portion where the wire is bonded to the case electrode; and
a second holding portion pressing down the case electrode on the upper face of the case inside the joint portion,
wherein the second holding portion is tapered along the wire.

14. The semiconductor device according to claim 13 , wherein the semiconductor chip is made of a wide-band-gap semiconductor having a bandgap wider than that of silicon.

15. A semiconductor device comprising:
a semiconductor chip;
a case surrounding the semiconductor chip;
a case electrode attached to an upper face of the case;
a wire connected to the semiconductor chip and the case electrode;
a first holding portion pressing down the case electrode on the upper face of the case outside a joint portion where the wire is bonded to the case electrode; and
a second holding portion pressing down the case electrode on the upper face of the case inside the joint portion,
wherein the second holding portion is adhesive.

16. The semiconductor device according to claim 15 , wherein the semiconductor chip is made of a wide-band-gap semiconductor having a bandgap wider than that of silicon.

Assignees

• Mitsubishi Electric Corp

Inventors

• Ogushi Naohiro
• Taguchi Koichi

Classifications

• H10W72/551

  Materials of bond wires · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/00

  Package configurations · CPC title