Semiconductor film composition, method of manufacturing semiconductor film composition, method of manufacturing semiconductor member, method of manufacturing semiconductor processing material, and semiconductor device

Patent metadata

Field	Value
Publication number	US-10759964-B2
Application number	US-201615776013-A
Country	US
Kind code	B2
Filing date	Nov 16, 2016
Priority date	Nov 16, 2015
Publication date	Sep 1, 2020
Grant date	Sep 1, 2020

Abstract

A composition for forming a film for semiconductor devices including: a compound (A) including a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom and having a weight average molecular weight of from 10,000 to 400,000; a crosslinking agent (B) which includes the three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(═O)OX groups are —C(═O)OH groups, and which has a weight average molecular weight of from 200 to 600; and water (D), in which the compound (A) is an aliphatic amine.

First claim

The invention claimed is:

1. A composition for forming a film for semiconductor devices comprising:
a compound (A) including a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom and having a weight average molecular weight of from 10,000 to 400,000;
a crosslinking agent (B) which includes three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in a molecule, wherein from one to six of the three or more —C(═O)OX groups are —C(═O)OH groups, and which has a weight average molecular weight of from 200 to 600; and
water (D),
wherein the compound (A) is an aliphatic amine, the crosslinking agent (B) has a ring structure in the molecule, a ratio (COOH/N) of a number of carboxy groups in the crosslinking agent (B) to a total number of nitrogen atoms in the compound (A) is from 0.1 to 3.0, and the composition does not comprise a crosslinking agent other than the crosslinking agent (B).

2. The composition for forming a film for semiconductor devices according to claim 1 , wherein the ring structure is at least one of a benzene ring or a naphthalene ring.

3. The composition for forming a film for semiconductor devices according to claim 1 , wherein the crosslinking agent (B) is a compound in which at least one X in the three or more —C(═O)OX groups is an alkyl group having from 1 to 6 carbon atoms.

4. The composition for forming a film for semiconductor devices according to claim 1 , further comprising at least one additive (C) selected from the group consisting of an acid (C-1) having a carboxy group and having a weight average molecular weight of from 46 to 195 and a base (C-2) having a nitrogen atom and having a weight average molecular weight of from 17 to 120.

5. The composition for forming a film for semiconductor devices according to claim 1 , wherein the weight average molecular weight of the compound (A) is from 10,000 to 200,000.

6. The composition for forming a film for semiconductor devices according to claim 1 , wherein a pH of the composition for forming a film for semiconductor devices at 25° C. is 7.0 or less.

7. A material for forming an adhesion layer between a metal and an insulating film comprising the composition for forming a film for semiconductor devices according to claim 1 .

8. A pore seal material of a low dielectric constant material comprising the composition for forming a film for semiconductor devices according to claim 1 .

9. A filling material for a recess formed in a substrate comprising the composition for forming a film for semiconductor devices according to claim 1 .

10. A method of manufacturing the composition for forming a film for semiconductor devices according to claim 1 , the method comprising:
mixing the compound (A), the crosslinking agent (B) and the water (D).

11. The method according to claim 10 ,
wherein the mixing comprises mixing a mixture of an acid (C-1) having a carboxy group and having a weight average molecular weight of from 46 to 195 and the compound (A), and the crosslinking agent (B).

12. The method according to claim 10 ,
wherein the mixing comprises mixing a mixture of a base (C-2) having a nitrogen atom and having a weight average molecular weight of from 17 to 120 and the crosslinking agent (B), and the compound (A).

13. A method of manufacturing a semiconductor member using the composition for forming a film for semiconductor devices according to claim 1 , the method comprising:
applying the composition for forming a film for semiconductor devices to a substrate; and
heating the substrate to which the composition for forming a film for semiconductor devices has been applied, at a temperature of from 250° C. to 425° C.

14. A method of manufacturing a semiconductor processing material using the composition for forming a film for semiconductor devices according to claim 1 , the method comprising:
applying the composition for forming a film for semiconductor devices to a substrate; and
heating the substrate to which the composition for forming a film for semiconductor devices has been applied, at a temperature of from 250° C. to 425° C.

Assignees

• Mitsui Chemicals Inc

Inventors

• Kayaba Yasuhisa
• Tanaka Hirofumi
• Wachi Hiroko
• Ono Shoko

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/6928

  the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides · CPC title

• H10P14/6534

  by exposure to a liquid · CPC title

• H10P14/6516

  of treatments performed after formation of the materials · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title