Fabrication method for fused multi-layer amorphous selenium sensor

Patent metadata

Field	Value
Publication number	US-10756283-B2
Application number	US-201916715023-A
Country	US
Kind code	B2
Filing date	Dec 16, 2019
Priority date	Dec 2, 2016
Publication date	Aug 25, 2020
Grant date	Aug 25, 2020

Abstract

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

First claim

What is claimed is:

1. A sensor, the sensor comprising:
a first charge blocking layer formed over a first substrate;
a first layer of amorphous selenium formed over the first charge blocking layer,
a second charge blocking layer formed over a second substrate;
a second layer of amorphous selenium formed over the second charge blocking layer;
a multi-layer structure formed by contact between the first layer of amorphous selenium and the second layer of amorphous selenium, wherein the first layer of amorphous selenium is fused to the second layer of amorphous selenium.

2. The sensor of claim 1 , wherein the first charge blocking layer and the second charge blocking layer each comprise an organic polymer.

3. The sensor of claim 1 , wherein the first charge blocking layer and the second charge blocking layer are formed by physical vapor deposition, chemical vapor deposition or solution-based deposition.

4. The sensor of claim 1 , wherein the first substrate comprises an electronic readout.

5. The sensor of claim 1 , wherein the first charge blocking layer is formed over a pixel electrode.

6. The sensor of claim 1 , wherein a thickness of the first layer of amorphous selenium is less than a thickness of the second layer of amorphous selenium.

7. The sensor of claim 1 , wherein at least one of the first layer of amorphous selenium and the second layer of amorphous selenium comprises doped amorphous selenium.

8. The sensor of claim 1 , wherein the second substrate comprises electroded glass or a scintillator.

9. The sensor of claim 1 , wherein at least one of the first substrate and the second substrate is a flexible substrate.

10. The sensor of claim 1 , further comprising a high voltage electrode formed over the second substrate.

11. The sensor of claim 1 , wherein the multi-layer structure is free of pores.

12. The sensor of claim 1 , wherein the first layer of amorphous selenium is of a thickness between 0.5 microns and 100 microns.

13. The sensor of claim 1 , wherein the first layer of amorphous selenium comprises a dopant selected from the group consisting of arsenic, tellurium and chlorine.

14. The sensor of claim 13 , wherein the dopant is included in amount of 0.1 atomic percent to 0.5 atomic percent.

15. The sensor of claim 1 , wherein a thickness of the first layer of amorphous selenium is within 5% to 200% of a thickness of the second layer of amorphous selenium.

Assignees

• Univ New York State Res Found

Inventors

• Scheuermann James
• Zhao Wei

Classifications

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10K30/10

  comprising heterojunctions between organic semiconductors and inorganic semiconductors · CPC title

• H10F39/1898 Primary

  Indirect radiation image sensors, e.g. using luminescent members · CPC title

• H10F30/29

  the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation · CPC title

• H10F77/121

  comprising only selenium or only tellurium · CPC title