Organic photodiodes, organic x-ray detectors and x-ray systems

Patent metadata

Field	Value
Publication number	US-2016111473-A1
Application number	US-201414517214-A
Country	US
Kind code	A1
Filing date	Oct 17, 2014
Priority date	Oct 17, 2014
Publication date	Apr 21, 2016
Grant date	—

Abstract

An organic photodiode is presented. The organic photodiode includes a first electrode; an organic absorber layer disposed on the first electrode; a second electrode disposed on the organic absorber layer; and a first charge blocking layer including a metal fluoride disposed between the organic absorber layer and one of the first electrode or the second electrode. The metal fluoride comprises lithium, sodium, potassium, rubidium, cesium, berrylium, magnesium, calcium, strontium, barium, iron, yttrium, ytterbium, or combinations thereof. The charge blocking layer is substantially free of an electrically conductive material, and the thickness of the charge blocking layer is greater than about 10 nanometers. A method of making an organic photodiode and an organic x-ray detector are also presented.

First claim

1 . An organic photodiode, comprising:
a first electrode; an organic absorber layer disposed on the first electrode; a second electrode disposed on the organic absorber layer; and a first charge blocking layer comprising a metal fluoride disposed between the organic absorber layer and one of the first electrode or the second electrode, wherein the metal fluoride comprises lithium, sodium, potassium, rubidium, cesium, berrylium, magnesium, calcium, strontium, barium, iron, yttrium, ytterbium, or combinations thereof, wherein the charge blocking layer is substantially free of an electrically conductive material, and wherein the thickness of the charge blocking layer is greater than about 10 nanometers.

2 . The organic photodiode of claim 1 , wherein the first charge blocking layer consists essentially of the metal fluoride.

3 . The organic photodiode of claim 1 , wherein the metal fluoride comprises lithium fluoride, magnesium fluoride, calcium fluoride, barium fluoride, sodium fluoride, potassium fluoride, or combinations thereof.

4 . The organic photodiode of claim 1 , wherein the first charge blocking layer has a thickness in a range from about 10 nanometers to about 200 nanometers.

5 . The organic photodiode of claim 1 , wherein the first charge blocking layer is disposed between the organic absorber layer and the second electrode, and the organic photodiode further comprises a second charge blocking layer disposed between the organic absorber layer and the first electrode.

6 . The organic photodiode of claim 5 , wherein the second charge blocking layer comprises an organic material.

7 . The organic photodiode of claim 5 , wherein the second electrode comprises a sputtered substantially transparent oxide.

8 . A method of forming an organic photodiode, comprising:
disposing an organic absorber layer on a first electrode; disposing a second electrode on the organic absorber layer; and disposing a first charge blocking layer comprising a metal fluoride between the organic absorber layer and one of the first electrode or the second electrode, wherein the metal fluoride comprises lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, iron, yttrium, ytterbium, or combinations thereof, wherein the charge blocking layer is substantially free of an electrically conductive material, and wherein the thickness of the charge blocking layer is greater than about 10 nanometers.

9 . The method of claim 8 , wherein the charge blocking consists essentially of the metal fluoride.

10 . The method of claim 8 , wherein the metal fluoride lithium fluoride, magnesium fluoride, calcium fluoride, barium fluoride, sodium fluoride, potassium fluoride, or combinations thereof.

11 . The method of claim 8 , wherein the first charge blocking layer has a thickness in a range from about 10 nanometers to about 200 nanometers.

12 . The method of claim 8 , comprising disposing the first charge blocking layer on the organic absorber layer; and disposing the second electrode on the first charge blocking layer by sputtering.

13 . The method of claim 12 , further comprising disposing a second charge blocking layer on the first electrode and disposing the organic absorber layer on the second charge blocking layer.

14 . An organic x-ray detector, comprising:
a thin-film transistor (TFT) array disposed on a substrate; an organic photodiode disposed on the TFT array, wherein the organic photodiode comprises:
a first electrode;
an organic absorber layer disposed on the first electrode;
a second electrode disposed on the organic absorber layer; and
a first charge blocking layer comprising a metal fluoride disposed between the organic absorber layer and one of the first electrode or the second electrode, wherein the metal fluoride comprises lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, iron, yttrium, ytterbium, or combinations thereof, wherein the charge blocking layer is substantially free of an electrically conductive material, and wherein the thickness of the charge blocking layer is greater than about 10 nanometers; and
a scintillator layer disposed on the organic photodiode.

15 . The organic x-ray detector of claim 14 , wherein the first charge blocking layer consists essentially of the metal fluoride.

16 . The organic x-ray detector of claim 14 , wherein the metal fluoride comprises lithium fluoride, magnesium fluoride, calcium fluoride, barium fluoride, sodium fluoride, potassium fluoride, or combinations thereof.

17 . The organic x-ray detector of claim 14 , wherein the first charge blocking layer has a thickness in a range from about 10 nanometers to about 200 nanometers.

18 . The organic x-ray detector of claim 14 , wherein the organic photodiode further comprises a second charge blocking layer disposed between the organic absorber layer and the first electrode, and wherein the first charge blocking layer is disposed between the organic absorber layer and the second electrode.

19 . The organic x-ray detector of claim 18 , wherein the second electrode comprises a sputtered substantially transparent oxide.

20 . An x-ray system, comprising:
an x-ray source; the x-ray detector of claim 14 ; and a processor operable to process data from the x-ray detector.

Assignees

• Gen Electric

Inventors

• Liu Jie Jerry
• An Kwang Hyup
• Parthasarathy Gautam

Classifications

• G01T1/248

  Silicon photomultipliers [SiPM], e.g. an avalanche photodiode [APD] array on a common Si substrate · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• H10K39/36

  Devices specially adapted for detecting X-ray radiation · CPC title

• H10K30/353 Primary

  comprising blocking layers, e.g. exciton blocking layers · CPC title

• H01L2251/301

  Electricity · mapped topic