Photocathode including field emitter array on a silicon substrate with boron layer

Patent metadata

Field	Value
Publication number	US-10748730-B2
Application number	US-201615160505-A
Country	US
Kind code	B2
Filing date	May 20, 2016
Priority date	May 21, 2015
Publication date	Aug 18, 2020
Grant date	Aug 18, 2020

Abstract

A photocathode utilizes an field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emissions, and a thin boron layer disposed directly on the output surface of the FEA to prevent oxidation. The field emitters are formed by protrusions having various shapes (e.g., pyramids or rounded whiskers) disposed in a two-dimensional periodic pattern, and may be configured to operate in a reverse bias mode. An optional gate layer is provided to control emission currents. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer. An optional external potential is generated between the opposing illuminated and output surfaces. An optional combination of n-type silicon field emitter and p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photocathode forms part of sensor and inspection systems.

First claim

The invention claimed is:

1. A photocathode comprising:
a silicon substrate having opposing first and second surfaces and including a plurality of integral field emitter protrusions, each said field emitter protrusion having fixed portion integrally formed on the silicon substrate and extending from said second surface to a tip portion, and
a substantially pure boron layer hermetically disposed at least on the tip portion of each said field emitter protrusion,
wherein the photocathode does not include a low work-function material, whereby electrons leaving said photocathode through said tip portions only pass through said substantially pure boron layer.

2. The photocathode of claim 1 , wherein said substantially pure boron layer has a thickness in the range of approximately 1 nm to 5 nm.

3. The photocathode of claim 2 ,
wherein the first surface is entirely disposed on a p-doped region of said silicon substrate, and said second surface and said plurality of field emitter protrusions are entirely disposed on an n-doped region of said silicon substrate, and
wherein said p-doped region and said n-doped region are configured to form a p-i-n photodiode operating in an avalanche multiplication condition when an external potential difference of at least 100 volts is applied across the silicon substrate.

4. The photocathode of claim 1 , further comprising a second substantially pure boron layer disposed directly on the first surface of the silicon substrate.

5. The photocathode of claim 4 , further comprising an anti-reflective layer disposed on the second substantially pure boron layer.

6. The photocathode of claim 1 , wherein the silicon substrate further comprises dopants configured such that, during operation of said photocathode, each said field emitter protrusion operates as a field emitter in a reverse bias mode.

7. The photocathode of claim 1 , wherein the plurality of field emitter protrusions are arranged in a two-dimensional periodic pattern on said second surface.

8. The photocathode of claim 1 , wherein each said field emitter protrusion comprises a pyramid-shaped structure.

9. The photocathode of claim 1 , wherein each said field emitter protrusion comprises one of a rounded cone-shaped structure and a rounded whisker-shaped structure.

10. The photocathode of claim 1 , further comprising at least one gate structure disposed over the output surface and positioned adjacent to and spaced from the tip portion of at least one of said plurality of field emitter protrusions.

11. The photocathode of claim 1 , further comprising conductive structures configured to apply an external potential difference across the silicon substrate.

12. The photocathode of claim 1 , wherein the silicon substrate includes a p-type gradient diffusion region extending from the first surface toward the second surface such that the p-type gradient diffusion region has a higher p-type dopant concentration in portions of the silicon substrate located near the first surface than in portions of the silicon substrate disposed away from the first surface.

13. A sensor for generating an electric signal in response to photons directed onto a receiving surface of said sensor, the sensor comprising:
a photocathode disposed adjacent to the receiving surface and configured to emit photoelectrons in response to said photons passing through said receiving surface and into said photocathode, the photocathode including:
a silicon substrate having opposing first and second surfaces and including a plurality of integral field emitter protrusions, each said field emitter protrusion having fixed portion integrally formed on the silicon substrate and extending from said second surface to a tip portion, and
a substantially pure boron layer hermetically disposed at least on the tip portion of each said field emitter protrusion;

a detection device having a detecting surface facing the second surface of said photocathode, said detection device configured to detect said photoelectrons emitted by said photocathode, and configured to generate said electric signal in response to said detected photoelectrons; and
a housing operably connected between the photocathode and the detection device such that the detecting surface of the detection device is separated from the photocathode by an intervening gap region that extends entirely between an exposed outer surface of the substantially pure boron layer and the detecting surface of the detection device.

14. The sensor of claim 13 , further comprising a second substantially pure boron layer disposed directly on the first surface of the silicon substrate.

15. The sensor of claim 14 , further comprising an anti-reflective layer disposed directly on the second substantially pure boron layer.

16. The sensor of claim 15 , wherein the receiving surface of the sensor comprises an outer surface of the anti-reflective material.

17. The sensor of claim 13 , wherein the silicon substrate further comprises implanted dopants configured such that, during operation of said photocathode, each said field emitter protrusion operates as a field emitter in a reverse-bias mode.

18. The sensor of claim 17 , wherein the plurality of field emitter protrusions are arranged in a two-dimensional periodic pattern on said second surface.

19. The sensor of claim 13 , wherein said substantially pure boron layer has a thickness in the range of approximately 1 nm to 5 nm.

20. The sensor of claim 13 , wherein said sensor comprises one of an image intensifier, an electron-bombarded charge-coupled device (EBCCD) and a photomultiplier.

21. The sensor of claim 13 , wherein each said field emitter protrusion comprises one of a rounded cone-shaped structure and a rounded whisker-shaped structure.

22. The sensor of claim 13 , wherein each said field emitter protrusion comprises a pyramid-shaped structure.

23. The sensor of claim 13 , further comprising at least one gate layer placed at approximately the same height as the field emitter tips.

24. The sensor of claim 13 , wherein the receiving surface comprises a layer of anti-reflective material disposed on a first surface of a window, and the silicon substrate is disposed on an opposing second surface of the window.

25. The sensor of claim 13 , wherein the detection device comprises a second silicon substrate and includes a boron layer disposed directly on the detecting surface of the second silicon substrate.

26. An inspection system comprising:
an illumination source configured to transmit directed photons;
a sensor configured to detect redirected photons; and
an optical system configured to guide the directed photons from the illumination source to a sample, and to guide redirected photons from the sample to the sensor,
wherein the sensor comprises:
a photocathode configured to emit photoelectrons in response to said redirected photons, the photocathode including:
a silicon substrate having opposing first and second surfaces and including a plurality of integral field emitter protrusions, each said field emitter protrusion having fixed portion integrally formed on the silicon substrate and extending from said second surface to a tip portion, and
a substantially pure boron layer hermetically disposed at least on the tip portion of each said field emitter protrusion and having an exposed outer surface that faces away from said silicon substrate; and

a detection device having a detec

Assignees

• Kla Tencor Corp

Inventors

• Chuang Yung-Ho Alex
• Fielden John
• Xiao-Li Yinying
• Liu Xuefeng

Classifications

• H10F39/15

  Charge-coupled device [CCD] image sensors · CPC title

• H10F39/18

  Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title

• H10F39/153

  Two-dimensional or three-dimensional array CCD image sensors · CPC title

• H10F30/225

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title

• H10F30/223

  the potential barrier being a PIN barrier · CPC title