Methods for depositing Group 13 metal or metalloid nitride films

Patent metadata

Field	Value
Publication number	US-10745808-B2
Application number	US-201615210172-A
Country	US
Kind code	B2
Filing date	Jul 14, 2016
Priority date	Jul 24, 2015
Publication date	Aug 18, 2020
Grant date	Aug 18, 2020

Abstract

Described herein are methods for forming a Group 13 metal or metalloid nitride film. In one aspect, there is provided a method of forming an aluminum nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising non-hydrogen containing nitrogen plasma into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm 2 ; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.

First claim

The invention claimed is:

1. A method of forming a high quality aluminum nitride film, via a plasma enhanced atomic layer deposition process (PEALD) or a PEALD-like process, the method comprising the steps of:
a. providing a substrate in a reactor;
b. heating the reactor to a temperature ranging from 100 to 400 degrees Celsius;
c. introducing into the reactor an at least one aluminum precursor represented by the following Formula 1:
MR n (NR 1 R 2 ) 3-n   I

wherein M is aluminum (Al), R is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 2 to C 10 alkenyl group, a linear or branched C 2 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, an electron withdrawing group, and a C 6 to C 10 aryl group; R 1 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, an electron withdrawing group, and a C 6 to C 10 aryl group; R 2 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 6 alkenyl group, a linear or branched C 3 to C 6 alkynyl group, a C 1 to C 6 dialkylamino group, a C 6 to C 10 aryl group, a linear or branched C 1 to C 6 fluorinated alkyl group, an electron withdrawing group, and a C 4 to C 10 aryl group; wherein n=0, 1, or 2 and wherein the at least one precursor reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer;
d. purging the reactor with a purge gas;
e. introducing a non-hydrogen containing nitrogen plasma selected from the group consisting of nitrogen plasma, nitrogen/helium plasma and nitrogen/argon plasma into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm 2 ; and a frequency range from 10 kilohertz to 60 megahertz;
f. optionally purging the reactor with an inert gas and
g. repeating the steps b through f until a desired thickness of the high quality aluminum nitride film is obtained, wherein the high quality aluminum nitride film has a density of 2.4 grams per cubic centimeter or greater, a hydrogen concentration no greater than 16.14 atomic percent and a step coverage of 60 percent or greater.

2. The method of claim 1 wherein the at least one aluminum precursor is selected from the group consisting of tris(dimethylamino)aluminum, and tris(ethylmethylamino)aluminum.

3. The method of claim 1 wherein the method is accomplished via the plasma enhanced atomic layer deposition process.

4. The method of claim 1 wherein the method is accomplished via the PEALD-like process.

5. The method of claim 1 wherein the purge gas is a noble gas.

6. The method of claim 1 , wherein the step e comprises applying energy to at least one of the precursor, nitrogen-containing source, reducing agent, other precursors or combinations thereof, wherein the energy is provided by at least one of the sources selected from the group consisting of thermal, plasma, pulsed plasma, helicon plasma, inductively coupled plasma, X-ray, e-beam, photon and remote plasma methods.

7. The method of claim 1 wherein R 1 and R 2 are the same.

8. The method of claim 1 wherein R 1 and R 2 are different.

9. The method of claim 1 , wherein R 1 and R 2 are linked together to form a substituted or unsubstituted heterocyclic ring.

10. The method of claim 9 , wherein the heterocyclic ring is selected from the group consisting of: pyrrolidino wherein R 1 and R 2 are linear C 2 alkyl groups; 2,5-dimethyl-pyrrolidino wherein R 1 and R 2 are branched C 3 alkyl groups; piperidino wherein R 1 and R 2 are linear C 3 alkyl groups; and 2,6-dimethylpiperidino wherein R 1 is a branched C 3 alkyl group and R 2 is a branched C 4 alkyl group.

11. The method of claim 1 further comprising the step of, prior to step e, introducing a plasma comprising hydrogen into the reactor to react with the at least a portion of the chemisorbed layer.

12. The method of claim 1 further comprising the step of treating the film once the desired thickness is achieved, wherein the treating is accomplished by exposure to an energy source selected from the group consisting of hydrogen plasma, helium plasma, argon plasma, UV radiation, IR radiation, and combinations thereof.

13. A method of forming a high quality aluminum nitride film, the method comprising the steps of:
a. providing a substrate in a reactor;
b. heating the reactor to a temperature from 100 to 400 degrees Celsius;
c. introducing into the reactor an at least one aluminum precursor selected from the group consisting of tris(dimethylamino)aluminum, and tris(ethylmethylamino)aluminum wherein the at least one aluminum precursor reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer;
d. purging the reactor with a purge gas; and
e. introducing a non-hydrogen containing nitrogen plasma selected from the group consisting of nitrogen plasma, nitrogen/helium plasma and nitrogen/argon plasma into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm 2 and a frequency range from 10 kilohertz to 60 megahertz; and
f. purging the reactor with an inert gas and
g. repeating the steps b through f, until a desired thickness of the high quality aluminum nitride film is obtained, wherein the aluminum nitride film has a density of 2.4 grams per cubic centimeter or greater, a hydrogen concentration no greater than 16.14 atomic percent and a step coverage of 60 percent or greater.

14. The method of claim 13 wherein the method is accomplished via plasma enhanced atomic layer deposition process.

15. The method of claim 13 wherein the method is accomplished via the PEALD-like process.

16. The method of claim 13 wherein the non-hydrogen containing nitrogen plasma comprises N 2 plasma.

17. The method of claim 13 wherein the purge gas is a noble gas.

18. The method of claim 13 , wherein the step e comprises applying energy to at least one of the precursor, nitrogen-containing source, reducing agent, other precursors or combinations thereof, wherein the energy is provided by at least one of the sources selected from the group consisting of thermal, plasma, pulsed plasma, helicon plasma, inductively coupled plasma, X-ray, e-beam, photon and remote plasma methods.

19. The method of claim 1 , wherein the at least one aluminum precursor is tris(dimethylamino)aluminum.

Assignees

• Air Prod & Chem
• Versum Mat Us Llc

Inventors

• Lei Xinjian
• Kim Moo-Sung
• Ivanov Sergei Vladimirovich

Classifications

• C23C16/303 Primary

  Nitrides · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10D64/01344 Primary

  in a nitrogen-containing ambient, e.g. N2O oxidation · CPC title