Barrier materials for display devices

Patent metadata

Field	Value
Publication number	US-10319862-B2
Application number	US-201314383723-A
Country	US
Kind code	B2
Filing date	Mar 8, 2013
Priority date	Mar 9, 2012
Publication date	Jun 11, 2019
Grant date	Jun 11, 2019

Abstract

Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm 3 or greater; a hydrogen content of about 4×10 22 cm −3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.

First claim

The invention claimed is:

1. A method for depositing a silicon-containing layer on a surface of a substrate, the method comprising:
providing the substrate in a reaction chamber wherein the substrate comprises a transparent conductive metal oxide layer;
depositing via a PECVD process a silicon oxide layer on top of the transparent conductive metal oxide layer, wherein the silicon oxide layer is deposited from a tetraethoxysilane precursor at a temperature of from 80° C. to 400° C., and wherein the silicon oxide layer has a thickness of from about 2 nm to 200 nm and a density of about 2.2 g/cm 3 or greater;
depositing via a vapor deposition process a silicon containing-layer by
i. introducing into the reaction chamber at least one silicon precursor selected from the group consisting of:
trisilylamine (TSA);
a dialkylaminosilane having a formula of R 1 R 2 NSiH 3 wherein R 1 is independently selected from the group consisting of a C 1-10 linear or branched alkyl group; a C 4 to C 10 cyclic alkyl group; a C 3 to C 12 alkenyl group; a C 3 to C 12 alkynyl group; and a C 6 to C 10 aryl group; R 2 is independently selected from a C 1-10 linear or branched alkyl group; a C 4 to C 10 cyclic alkyl group; a C 3 to C 12 alkenyl group; a C 3 to C 12 alkynyl group; and a C 6 to C 10 aryl group and wherein R 1 and R 2 are linked to form a ring or R 1 and R 2 are not linked to form a ring;
organoaminosilane having a formula of (R 1 R 2 N) n SiH 4-n wherein R 1 is independently selected from the group consisting of a C 1-10 linear or branched alkyl group; a C 4 to C 10 cyclic alkyl group; a C 3 to C 12 alkenyl group; a C 3 to C 12 alkynyl group; and a C 6 to C 10 aryl group; R 2 is independently selected from a C 1-10 linear or branched alkyl group; a C 4 to C 10 cyclic alkyl group; a C 3 to C 12 alkenyl group; a C 3 to C 12 alkynyl group; and a C 6 to C 10 aryl group and wherein R 1 and R 2 are linked to form a ring or R 1 and R 2 are not linked to form a ring; and n is 2, 3, or 4;
an isocyanatosilane selected from the group consisting of tetra(isocynato)silane and tri(isocynato)silane;
an alkylazidosilanes having the formula of R 1 R 2 R 3 SiN 3 wherein R 1 , R 2 , and R 3 are independently selected from the group consisting of a C 1-10 linear or branched alkyl group; a C 4 to C 10 cyclic alkyl group; a C 3 to C 12 alkenyl group; a C 3 to C 12 alkynyl group; and a C 6 to C 10 aryl group;
ii. introducing into the reaction chamber a source selected from the group consisting of an oxygen source, a nitrogen-containing source, and a combination thereof; and
iii. applying energy to the at least one silicon precursor and the source to deposit the silicon containing layer on the at least one surface of the silicon oxide layer at one or more temperatures ranging from about 25° C. to 350° C. to form a double passivation layer on top of the transparent conductive metal oxide layer,
wherein the vapor deposition process is selected from the group consisting of plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), and plasma enhanced atomic layer deposition (PEALD), wherein the silicon containing layer comprises silicon nitride having a transparency of greater than about 90% at 400-700 nanometers when measured by UV-visible light spectrometry, and wherein the silicon nitride has a density of 2.4 g/cm 3 or greater and a hydrogen content of 4×10 22 cm −3 or less.

2. The method of claim 1 wherein the conductive metal oxide layer comprises at least one selected from the group consisting of Indium Gallium Zinc Oxide (IGZO), a-IGZO (amorphous indium gallium zinc oxide), Indium Tin Zinc Oxide (ITZO), Aluminum Indium Oxide (AlInOx), Zinc Tin Oxide (ZTO), Zinc Oxynitride (ZnON), Magnesium Zinc Oxide, zinc oxide (ZnO), InGaZnON, ZnON, ZnSnO, CdSnO, GaSnO, TiSnO, CuAlO, SrCuo, LaCuOS, and combinations thereof.

3. The method of claim 1 wherein the silicon oxide layer comprises a hydrogen content of 5 atomic % or less.

4. The method of claim 1 wherein the silicon-containing layer comprises at least one or more of the following properties: a density greater of about 1.9 g/cm 3 or greater, a hydrogen content of 4×10 22 cm −3 or less, and a transparency >90% at 400-700 nm.

5. The method of claim 1 wherein the oxygen source is selected from the group consisting of water (H 2 O), oxygen (O 2 ), oxygen plasma, ozone (O 3 ), NO, N 2 O, carbon monoxide (CO), carbon dioxide (CO 2 ) and combinations thereof.

6. The method of claim 1 wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, NF 3 , and mixtures thereof.

7. The method of claim 1 wherein the temperature of the depositing step ranges from about 150° C. to about 350° C.

8. The method of claim 1 wherein the vapor deposition process is plasma enhanced chemical vapor deposition (PECVD).

9. The method of claim 1 wherein the silicon precursor comprises trisilylamine.

10. The method of claim 1 wherein the silicon-containing layer comprises a single passivation layer.

Assignees

• Air Prod & Chem
• Versum Mat Us Llc

Inventors

• Ridgeway Robert Gordon
• Johnson Andrew David
• Mallikarjunan Anupama
• Vrtis Raymond Nicholas
• Lei Xinjian
• O'Neill Mark Leonard
• Xiao Manchao
• Li Jianheng
• Savo Michael T

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• C23C16/40

  Oxides · CPC title

• C23C16/402

  Silicon dioxide · CPC title

• C23C16/345 Primary

  Silicon nitride · CPC title