Diamond-like carbon film

Patent metadata

Field	Value
Publication number	US-10745282-B2
Application number	US-201816002222-A
Country	US
Kind code	B2
Filing date	Jun 7, 2018
Priority date	Jun 8, 2017
Publication date	Aug 18, 2020
Grant date	Aug 18, 2020

Abstract

Apparatuses and methods to manufacture integrated circuits are described. A method of forming film on a substrate is described. The film is formed on a substrate by exposing a substrate to a diamond-like carbon precursor having an sp3 content of greater than 40 percent. Methods of etching a substrate are described. Electronic devices comprising a diamond-like carbon film are also described.

First claim

What is claimed is:

1. A method comprising forming a film on a substrate by exposing the substrate to a diamond-like carbon precursor having a structure of formula (II)

wherein each of R 13 -R 20 are independently selected from H, a halogen, or a substituted or unsubstituted C 1 -C 4 alkyl, and wherein the film has a Young's modulus greater than 180 GPa, measured at room temperature.

2. The method of claim 1 , wherein the diamond-like carbon precursor comprises one or more bicyclo[2.2.1]hepta-2,5-diene (2,5-norbornadiene) or norbornene (C 7 H 10 ).

3. The method of claim 1 , wherein the film is etch selective and strip selective over spin-on-carbon (SOC).

4. The method of claim 1 , wherein the film is a hard mask layer.

5. The method of claim 1 , wherein the substrate comprises at least one feature selected from a peak, a trench, or a via.

6. The method of claim 1 , further comprising mixing the diamond-like carbon precursor with one or more additional precursor selected from C 2 H 2 , C 3 H 6 , CH 4 , or C 4 H 8 .

7. The method of claim 1 , wherein the diamond-like carbon precursor is heated in an ampoule and flowed to the substrate with a carrier gas.

8. The method of claim 7 , wherein the carrier gas comprises one or more of hydrogen (H 2 ), argon (Ar), helium (He), xenon (Xe), or nitrogen (N 2 ).

9. A method of etching a substrate comprising:
forming a carbon hard mask on the substrate, the carbon hard mask having at least one opening and formed by exposing the substrate to a diamond-like carbon precursor having a structure of formula (II)

wherein each of R 13 -R 20 are independently selected from H, a halogen or a substituted or unsubstituted C 1 -C 4 alkyl, and wherein the carbon hard mask has a Young's modulus greater than 180 GPa, measured at room temperature; and
etching the substrate through the at least one opening.

10. The method of claim 9 , wherein the diamond-like carbon precursor comprises one or more the diamond-like precursor comprises one or more of bicyclo[2.2.1]hepta-2,5-diene (2,5-norbornadiene) or norbornene (C 7 H 10 ).

11. The method of claim 9 , further comprising forming a photoresist prior to etching, the photoresist formed between the substrate and the hard mask or on the hard mask.

12. The method of claim 9 , further comprising mixing the diamond-like carbon precursor with one or more additional precursor selected from C 2 H 2 , C 3 H 6 , CH 4 , or C 4 H 8 .

13. The method of claim 9 , further comprising removing the carbon hard mask after etching the substrate.

Assignees

• Applied Materials Inc

Inventors

• Venkatasubramanian Eswaranand
• Gottheim Samuel E
• Manna Pramit
• Mallick Abhijit Basu

Classifications

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title